Diamond single crystal surface metallization treatment method

Abstract

The invention discloses a diamond single crystal surface metallization treatment method. The method comprises steps as follows: the surface of a diamond single crystal is bombarded and sputtered with Fe, Co or Ni as a source electrode target material with a double-glow plasma diffusion metallizing technique; the single crystal is soaked in an acid solution, so that remaining metal and graphite are removed; a metal diffusion coating is prepared on the surface of the diamond single crystal with strong carbide metal as a target material with a double-glow plasma diffusion metallizing technique. Uniformly distributed micro pits are formed in the surface of the single crystal under the bombardment and sputtering functions of the double-glow plasma and the graphitized catalytic function of Fe, Co, Ni and other iron group metals, surface roughening and activation are realized, strong carbide metallic elements react with a part of carbon atoms on the surface of the diamond so that chemical bond combination is realized, and the bonding strength of the surface metallization coating and the single-crystal diamond is improved. Bombardment etching and metallization treatment are realized with one device, the process is simple, the cost is low, and the method is suitable for industrial production.

Description

technical field [0001] The invention relates to a surface treatment method of a superhard material, in particular to a method for metallization treatment of a diamond single crystal surface. Background technique [0002] Diamond single crystal material has many excellent properties, such as high hardness, wear resistance and thermal conductivity, so it is currently the material of choice for manufacturing knives and heat dissipation devices. However, the wettability of diamond and metal is poor, and it is difficult to meet the requirements of direct welding with the tool substrate or metal packaging of heat dissipation devices. At present, there are three methods to solve the welding or packaging of diamond single crystal: the first one is to use active flux that is better for diamond infiltration. The disadvantage of this method is that the ratio of active flux is complicated and not easy to master; Boron doping treatment is performed on the surface of the single crystal. ...

AI Technical Summary

Problems solved by technology

At present, the plasma bombardment sputtering etching method excited by argon, hydrogen, oxygen or their mixed gases can realize the selective etching of the whole diamond single crystal or a certain surface, but the obtained single crystal surface Not only poor roughness uniformity, but also low efficiency

However, using Fe, Co, Ni and other Fe group elements to catalyze the conversion of diamond to graphite, although uniform etching pits can be formed on the diamond surface, the commonly used embedding method will cause all surfaces of the single crystal to be etched. , not selective

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