Method for welding CVD diamond thick film and hard alloy
A diamond thick film and hard alloy technology, which is applied in welding equipment, metal processing equipment, manufacturing tools, etc., can solve the problems of high welding cost, large equipment investment, and high solder requirements, achieve good surface wettability, and solve the problem of high investment. , the effect of excellent bonding strength
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Publication Date
- 2014-07-02
Smart Images
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Abstract
Description
technical field
[0001] The invention relates to the welding field of superhard materials, in particular to a welding method of CVD diamond thick film and hard alloy. Background technique
[0002] Diamond is the hardest substance in nature, and it has many excellent properties, such as ultra-high wear resistance, high thermal conductivity, etc., so it is the most ideal material for making knives among known materials. Natural diamond and polycrystalline diamond (PCD) tools are rapidly replacing traditional high-speed steel and carbide tools within a certain range of use. However, due to the extremely limited resources of natural diamond, its large-scale promotion is limited, and the PCD tool contains 5-10% binder components, resulting in the surface quality of the processed material being lower than that of natural diamond. Diamond thick film welding tool is a new type of cutting tool manufactured by welding chemical vapor deposition (CVD) diamond thick film and hard alloy. ...
Examples
Embodiment 1
[0024] A welding method of CVD diamond thick film and cemented carbide, first using double glow plasma metallization equipment to metallize the growth surface of CVD diamond thick film, and then using the same double glow plasma metallization equipment to metallize The final CVD diamond thick film growth surface is brazed with the cemented carbide substrate;
[0025] Among them, the metallization process of CVD diamond thick film growth surface is:
[0026] The CVD diamond thick film was prepared by microwave plasma CVD method, hot wire CVD method or DC arc plasma CVD method, and the CVD diamond thick film was ultrasonically cleaned with deionized water and alcohol for 5 minutes, and dried with hot air; The CVD diamond thick film growth side is placed on the substrate table in the vacuum furnace of the double-glow plasma metallization equipment, and the metal W with a purity of 99.9% that can form strong carbides with carbon is selected as the target material. The distance be...
Embodiment 2
[0036] A welding method of CVD diamond thick film and cemented carbide, first using double glow plasma metallization equipment to metallize the growth surface of CVD diamond thick film, and then using the same double glow plasma metallization equipment to metallize The final CVD diamond thick film growth surface is brazed with the cemented carbide substrate;
[0037] Among them, the metallization process of CVD diamond thick film growth surface is:
[0038] The CVD diamond thick film was prepared by microwave plasma CVD method, hot wire CVD method or DC arc plasma CVD method, and the CVD diamond thick film was ultrasonically cleaned with deionized water and alcohol for 5 minutes, and dried with hot air; The CVD diamond thick film growth side is placed on the substrate table in the vacuum furnace of the double-glow plasma metallization equipment, and Ti, which can form strong carbides with carbon elements, is selected as the target material. The target material and the CVD diam...
Embodiment 3
[0044] A welding method of CVD diamond thick film and cemented carbide, first using double glow plasma metallization equipment to metallize the growth surface of CVD diamond thick film, and then using the same double glow plasma metallization equipment to metallize The final CVD diamond thick film growth surface is brazed with the cemented carbide substrate;
[0045] Among them, the metallization process of CVD diamond thick film growth surface is:
[0046] The CVD diamond thick film was prepared by microwave plasma CVD method, hot wire CVD method or DC arc plasma CVD method, and the CVD diamond thick film was ultrasonically cleaned with deionized water and alcohol for 4 minutes, and dried with hot air; The CVD diamond thick film growth side is placed on the substrate table in the vacuum furnace of the double-glow plasma metallization equipment, and Zr, which can form strong carbides with carbon elements, is selected as the target material. The target material and the CVD diam...