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Method for preparing alpha-Al2O3 coating by using double-glow plasma diffusion metalizing technology at low temperature

A dual-glow plasma infiltration and plasma oxidation technology, applied in metal material coating process, coating, ion implantation plating and other directions, can solve problems such as adverse effects on adhesion, affect structure and performance, limit substrate, etc., and achieve corrosion resistance. And anti-oxidation and other properties are improved, no holes, good combination effect

Inactive Publication Date: 2015-10-21
江苏模影科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the thermal expansion mismatch will generate residual stress, and the cracks generated by the residual stress will have an adverse effect on the adhesion between the film and the substrate.
Chemical vapor deposition is not suitable for deposition on high-speed steel (HSS), which limits the choice of substrates. Excessive preparation temperature will cause damage to the substrate and affect its structure and properties.

Method used

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  • Method for preparing alpha-Al2O3 coating by using double-glow plasma diffusion metalizing technology at low temperature
  • Method for preparing alpha-Al2O3 coating by using double-glow plasma diffusion metalizing technology at low temperature
  • Method for preparing alpha-Al2O3 coating by using double-glow plasma diffusion metalizing technology at low temperature

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Experimental program
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Embodiment 1

[0022] (1) 10 wt% Y, 10 wt% α-Al 2 o 3 Seed crystals and 80 wt% Al powder were uniformly ball-milled and mixed on a planetary ball mill, pressed into discs on a small cold press, and then sintered in a vacuum hot-press furnace to obtain Al / Y / α-Al 2 o 3 target;

[0023] (2) Preparation of doped α-Al on the surface of 316L stainless steel by double glow plasma metallization technology 2 o 3 Al coating of seed crystal and rare earth element Y. The experimental parameters are: vacuum degree, 2×10 -4 Pa; source voltage, -700 V, substrate voltage, -300 V, electrode spacing, 15 mm; air pressure, 30 Pa; sputtering time, 3h; sputtering temperature, 580 o C;

[0024] (3) Plasma oxidation is used to prepare Y and α-Al 2 o 3 The seeded co-doped Al coating is heat-treated. The oxidation temperature is 580 o C, the argon gas flow rate is 40 sccm, the air pressure is 40 Pa, and the oxidation time is 1 h. By changing the oxygen flow rate of the single factor, a coating meeting the...

Embodiment 2

[0026] (1) 10 wt% Y, 10 wt% α-Al 2 o 3 Seed crystals and 80 wt% Al powder were uniformly ball-milled and mixed on a planetary ball mill, pressed into discs on a small cold press, and then sintered in a vacuum hot-press furnace to obtain Al / Y / α-Al 2 o 3 target;

[0027] (2) Preparation of doped α-Al on the surface of 316L stainless steel by double glow plasma metallization technology 2 o 3 Al coating of seed crystal and rare earth element Y. The experimental parameters are: vacuum degree, 2×10 -4 Pa; source voltage, -700 V, substrate voltage, -300 V, electrode spacing, 15 mm; air pressure, 30 Pa; sputtering time, 3h; sputtering temperature, 580 o C;

[0028] (3) Plasma oxidation is used to prepare Y and α-Al 2 o 3 The seeded co-doped Al coating is heat-treated. The oxidation temperature is 580 o C. The argon gas flow rate is 40 sccm, the air pressure is 40 Pa, and the oxidation time is 1 h. By changing the oxygen flow rate of the single factor, a coating meeting the...

Embodiment 3

[0030] (1) 10 wt% Y, 10 wt% α-Al 2 o 3 Seed crystals and 80 wt% Al powder were uniformly ball-milled and mixed on a planetary ball mill, pressed into discs on a small cold press, and then sintered in a vacuum hot-press furnace to obtain Al / Y / α-Al 2 o 3 target;

[0031] (2) Preparation of doped α-Al on the surface of 316L stainless steel by double glow plasma metallization technology 2 o 3 Al coating of seed crystal and rare earth element Y. The experimental parameters are: vacuum degree, 2×10 -4 Pa; source voltage, -700 V, substrate voltage, -300 V, electrode spacing, 15 mm; air pressure, 30 Pa; sputtering time, 3h; sputtering temperature, 580 o C;

[0032] (3) Plasma oxidation is used to prepare Y and α-Al 2 o 3 The seeded co-doped Al coating is heat-treated. The oxidation temperature is 580 o C. The argon gas flow rate is 40 sccm, the air pressure is 40 Pa, and the oxidation time is 1 h. By changing the oxygen flow rate of the single factor, a coating meeting the...

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Abstract

The invention relates to a new method for preparing an alpha-Al2O3 coating by using a double-glow plasma diffusion metalizing technology at a low temperature. Firstly, a rare earth element Y and an alpha-Al2O3 seed crystal are added in an Al target, and an Al coating which is formed by doping of Y and alpha-Al2O3 seed crystal is prepared on a 316L stainless steel surface with the double-glow plasma diffusion metalizing technology; and then, under the low temperature of 580 DEG C, the coating is oxidized by plasmas, so that the coating with a high content of alpha-Al2O3 on the surface is obtained. The invention provides the new method for preparing the coating with the high content of alpha-Al2O3 on the 316L stainless steel surface at the low temperature; and the coating can be widely applied to the fields such as corrosion resistance, oxidation resistance and tritium resistance of stainless steel metals and the like.

Description

technical field [0001] The invention relates to a low-temperature preparation of α-Al by using double-glow plasma metal infiltration technology 2 o 3 A new coating method belongs to the technical field of surface coating. Background technique [0002] α-Al 2 o 3 It has thermodynamic stability, good insulation even at high temperature, excellent chemical stability, high hardness, strong resistance to tritium penetration and good self-repair, etc. Therefore, it is widely used in electronic components and optical fields. And machinery and other fields have a wide range of applications. Currently preparing α-Al 2 o 3 According to the preparation process, the coating method can be divided into one-step deposition and composite treatment method (preparing the aluminum layer first and then oxidation treatment). One-step deposition methods mainly include physical vapor deposition, chemical vapor deposition and plasma spraying. The traditional chemical vapor deposition method...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/46C23C14/06C23C14/58
Inventor 林岳宾朱雨富王华玲
Owner 江苏模影科技有限公司
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