Process for preparing diamond-like coating doped with silicon element

A technology of diamond coating and preparation process, which is applied in metal material coating process, coating, superimposed layer plating, etc., which can solve the problem of poor bonding between coating and substrate, large internal stress of coating, and failure to meet industrial needs and other issues to achieve good corrosion resistance

Inactive Publication Date: 2015-05-06
SHANGHAI INST OF TECH
View PDF6 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the traditionally prepared diamond-like coatings have problems such as unstable quality, large internal stress of the coating, poor bonding force between the coating and the substrate, and thin coating thickness, which cannot meet the industrial needs, which greatly restricts the development of diamond-like coatings. layer promotion

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Process for preparing diamond-like coating doped with silicon element

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] The structure of the diamond-like coating prepared by the preparation process of the silicon-doped diamond-like coating of the present invention, such as figure 1 As shown, it includes a transition layer 2 and a top layer 3. The transition layer 2 is CrN to improve the bonding force between the coating and the substrate and reduce the stress inside the coating. The top layer 3 is a silicon-doped diamond-like coating, and its Vickers hardness More than HV2800, the friction coefficient is less than 0.05.

[0029] The preparation process of the silicon-doped diamond-like coating of the present invention: the equipment used is a physical vapor deposition equipment (model ICS-04 ARC PRO) plus a glow discharge device. The coating structure of the workpiece 1 consists of a transition layer 2 and a top layer 3 . For the surface pretreatment of the workpiece 1, argon gas is introduced into the vacuum furnace to perform plasma cleaning on the workpiece; nitrogen gas is introduce...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Vickers hardnessaaaaaaaaaa
Vickers hardnessaaaaaaaaaa
Login to view more

Abstract

The invention relates to a process for preparing a diamond-like coating doped with silicon element. The adopted equipment refers to physical vapor deposition equipment and a light discharge device. The process comprises the following steps: pretreating the surface of a workpiece, introducing argon into a vacuum furnace, and performing plasma cleaning on the workpiece; introducing nitrogen into the vacuum furnace chamber, taking Cr as a target, and depositing a CrN transition layer on the surface of the workpiece by adopting a physical vapor deposition technology; introducing acetylene and tetramethylsilane into the vacuum furnace, and preparing the diamond-like coating of which the top is doped with silicon element by virtue of a plasma glow discharge technology. The diamond-like coating is prepared by controlling the vacuum degree, substrate bias voltage, nitrogen flow, tetramethylsilane flow, acetylene flow and target current size. The prepared diamond-like coating doped with silicon element has the advantages of low deposition temperature (lower than 180 DEG C), high binding force, high hardness (Vickers hardness of more than HV2800), low friction coefficient (less than 0.05), corrosion resistance, oxidation resistance and the like.

Description

technical field [0001] The invention relates to a process for preparing a coating by physical vapor deposition plus glow discharge technology, in particular to a process for preparing a silicon-doped diamond-like coating. Background technique [0002] Diamond-like coatings have the characteristics of high hardness, low friction coefficient, and good corrosion resistance, and are widely used in aerospace, machinery, biomedicine, computers and other fields. However, the traditionally prepared diamond-like coatings have problems such as unstable quality, large internal stress of the coating, poor bonding force between the coating and the substrate, and thin coating thickness, which cannot meet the industrial needs, which greatly restricts the development of diamond-like coatings. layer promotion. Contents of the invention [0003] The object of the present invention is to provide a kind of preparation technology that has good binding force, high hardness, low coefficient of ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/14C23C14/22C23C16/26C23C16/50C23C28/00
Inventor 张而耕王琴雪张体波陈强
Owner SHANGHAI INST OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap