8results about How to "Improve breakdown resistance" patented technology

The invention relates to an all-inorganic flexible capacitor and a preparation method thereof, the all-inorganic flexible capacitor comprises at least one all-inorganic flexible capacitor unit, and the all-inorganic flexible capacitor unit comprises a metal electrode, a flexible electrode and a dielectric layer between the two electrodes; the dielectric layer is a metal oxide, the dielectric layer is generated by electrolysis on the surface of the metal foil through an electrochemical oxidation method, the metal foil is not completely electrolyzed, the remaining part of the metal foil after electrolysis serves as a flexible electrode, the dielectric layer is tightly attached to the flexible electrode, and a metal film is deposited on the surface of the dielectric layer to serve as a metal electrode. Compared with the prior art, the full-inorganic flexible capacitor can bear high voltage and is high in energy density, simple in structure and excellent in breakdown resistance, and the preparation method is simple, high in operability, low in cost, suitable for large-scale preparation and high in industrial production feasibility.

The utility model discloses a silicon carbide MOSFET device comprising at least one cell, and each cell comprises a silicon carbide substrate of a first doping type; an epitaxial layer of a first doping type; the well regions of the second doping type are located in the epitaxial layer, and JFET regions are arranged between the adjacent well regions; the source region of the first doping type is located in the well region; the contact region of the second doping type is located in the well region and is adjacent to the source region; the field oxide layer is located on the surface of the epitaxial layer and located above the JFET region; the gate oxide layer comprises a first gate oxide layer and a second gate oxide layer, and the first gate oxide layer and the second gate oxide layer are located on the two sides of the field oxide layer respectively and are adjacent to the field oxide layer respectively; the gate conductors comprise a first gate conductor and a second gate conductor, the first gate conductor covers the surface of the first gate oxide layer and part of the surface of the field oxide layer, the second gate oxide layer covers the surface of the second gate oxide layer and part of the surface of the field oxide layer, and the first gate conductor and the second gate conductor are separated from each other.

The invention relates to the technical field of batteries, and discloses a pole column and a forming process thereof, a battery cell cover plate assembly and a battery cell. The pole forming process comprises the following steps: stamping and blanking a conductive composite board along a Z direction to obtain a pole body; wherein the pole body comprises a first conductive section and a second conductive section; wrapping and limiting the first conductive section, and extruding and expanding the local part of one end, far away from the first conductive section, of the second conductive section along the Z direction, so that an annular flange is formed on the side wall of the second conductive section on the X-Y plane; stamping and stretching the local part of the annular flange to enable the free end of the annular flange to form a pole turnup; wherein the pole turnup comprises a first turnup and a second turnup which are connected with each other, the first turnup extends towards the direction far away from the second conductive section along the Z direction, the first turnup and the first conductive section are arranged at an interval, and the second turnup extends towards the direction far away from the first conductive section. The pole prepared by the invention can reduce heat transferred to the upper plastic, and the insulating property of the pole is guaranteed.

The invention relates to the technical field of energy storage, and provides a preparation method of high-breakdown-resistance fluorine-containing aromatic polythiourea aiming at the problems of low dielectric constant, low breakdown-resistance strength, large energy loss and the like of a full-flexible polymer film, the preparation method comprises the following steps: firstly, carrying out microwave polymerization on 2, 2-bis (3-amino-4-hydroxyphenyl)-hexafluoropropane (BAHHHFP) and thiourea; a high-molecular F-ArPTU dielectric polymer is prepared; performing vacuum drying to obtain a product F-ArPTU powder; the product is prepared into a dielectric polymer film for testing and verifying the breakdown resistance and the energy storage performance of the dielectric polymer film. The method is simple and efficient in path, and the prepared polymer can be applied to flexible film capacitors.

The metal wire annealing device comprises an annealing main body, a detection unit and a peeling box, and the interior of the peeling box is filled with a polishing particle layer used for polishing the surface of a wire. The shape fixing assembly is used for adjusting the shape fixing force of the polishing particle layer, and the control module is electrically connected with the detection unit and the shape fixing assembly. When the detection data of the detection unit is larger than a threshold value, the control module adjusts the shape fixing force of the polishing particle layer through the shape fixing assembly according to the detection data. The detection unit monitors the proportion area of the oxide skin in real time, the control module dynamically adjusts the shape fixing force of the polishing particle layer, the oxide skin with different adhesion amounts can be removed in a targeted mode, the problem of oxide skin residues is solved, the conductivity stability of copper wires is guaranteed, interference of the oxide skin on extrusion of an insulating layer is avoided, the breakdown resistance of the cable is improved, and the service life of the cable is prolonged.

The invention discloses a single-component photovoltaic structural sealant and a preparation method thereof. The bonding strength of the sealant is promoted by controlling a preparation process and adjusting a coupling agent. The preparation method comprises the following steps: 1) adding heavy calcium carbonate, light calcium carbonate, titanium dioxide, magnesium hydroxide and silicone oil into hydroxyl-terminated dimethyl siloxane according to a certain proportion, and carrying out vacuum stirring to obtain a colloid A; 2) adding white carbon black and a cross-linking agent into A in batches, and performing vacuum stirring to obtain colloid B; and (3) mixing a coupling agent, a catalyst and acetylacetone, adding the mixture into the colloid B to obtain colloid C, continuously vacuumizing the colloid C, and subpackaging to obtain a finished product. According to the present invention, the surface drying time and the deep curing effect of the product are excellent, the elongation at break of the glue can be increased, the toughness can be improved, further, the efficiency required by the industrial production is improved, and the curing depth of the photovoltaic glue product at different temperatures and humidity is good.

This invention discloses a flame-retardant, breakdown-resistant capacitor base film and its preparation method. The raw materials, by weight, include: 100 parts polypropylene; 3.5-8.5 parts compatibilizer; 14-25 parts flame-retardant dielectric modifier; 0.3-1 parts antioxidant; and 0.5-1.8 parts nucleating agent. The flame-retardant dielectric modifier is a composite microcapsule obtained by coating the core material with nano-magnesium hydroxide and silica-modified polydopamine. By adding a flame-retardant dielectric modifier to the polypropylene system, this invention imparts excellent flame-retardant properties to the prepared polypropylene capacitor base film, while also improving its mechanical strength, increasing the dielectric constant of the base film, and enhancing its breakdown resistance, thus improving its overall performance.

The invention discloses a nano-composite dielectric film with a multilayer gradient structure and a preparation method thereof, the nano-composite dielectric film comprises symmetrically arranged outer pressure-bearing layers and a polarization layer located between the two pressure-bearing layers, and is characterized in that a buffer layer is arranged between the pressure-bearing layers and the polarization layer, and the buffer layer is formed by mixing P (VDF-HFP) and PMMA according to a volume ratio of 60%; the pressure-bearing layer, the polarization layer and the buffer layer are filled with Ni (OH) 2. The preparation method comprises the following steps: 1) preparing Ni (OH) 2 nanosheets by adopting a hydrothermal method; 2) adding the Ni (OH) 2 nanosheets into the pressure-bearing layer, the buffer layer and the polarization layer, and carrying out electrostatic spinning according to a multilayer gradient structure; (3) performing hot-pressing film forming under a preset condition to obtain a nano composite dielectric thin film with a multi-layer gradient structure; the method has the advantages that the dielectric difference between different functional layers of the multilayer structure can be obviously relieved, the breakdown field strength and dielectric constant are improved, and the energy storage density is improved.