27results about How to "Improve breakdown resistance" patented technology

The invention belongs to the technical field of cables, and particularly relates to a high-voltage cable for a new energy vehicle, which comprises a conductor and an insulating layer, the insulating layer material is prepared from the following raw materials in parts by mass: 40 to 50 parts of polyethylene, 5 to 10 parts of beta-caryophyllene-maleic anhydride-polyethylene copolymer, 10 to 15 parts of ethylene-octene copolymer, 1 to 4 parts of composite cross-linking agent, 2 to 3 parts of cellulose nanofiber, 1 to 2 parts of kaurene, 5 to 10 parts of flame retardant, 0.5 to 1 part of flexibilizer and 0.5 to 1 part of lubricant. The prepared cable has excellent thermal stability, mechanical strength and insulating property, the service life of the cable is effectively prolonged, and the use stability of the cable is effectively improved.

The invention relates to a flame-retardant breakdown-resistant metallized film and a capacitor, the flame-retardant breakdown-resistant metallized film comprises an aluminum shell, a capacitor core and an epoxy resin layer for packaging the capacitor core, and the capacitor core is formed by winding and metal spraying the flame-retardant breakdown-resistant metallized film; and preparing a metal coating on the surface of the flame-retardant modified insulating film through a vacuum coating process. According to the flame-retardant breakdown-resistant thin-film capacitor, through a manufacturing process of modifying an existing insulating base film, adding a flame retardant into polymer particles, and then spraying a corona auxiliary liquid on the thin film to be matched with corona treatment, the defects that the hot shrinkage rate of the thin film is too large and the impact strength is low due to the addition of the flame retardant can be overcome; and finally, the flame retardance and the breakdown resistance of the thin film capacitor are remarkably improved.

The invention relates to a high-flame-retardant PVC composite material for a charging pile drag chain, and belongs to the technical field of polymer composite materials. The composite material is prepared from the following components: 10 to 15 weight percent of ABS (Acrylonitrile Butadiene Styrene) resin, 15 to 22 weight percent of composite flame retardant, 12 to 16 weight percent of plasticizer, 1.9 to 2.4 weight percent of stabilizer, 0.25 to 0.3 weight percent of antioxidant, 2.2 to 2.6 weight percent of lubricant and the balance of PVC (Polyvinyl Chloride) resin, according to the composite flame retardant, mica powder serves as a core material, a large number of compounds containing cyclic phosphate ester are introduced to the surface, a mica powder-carbide lamellar layer is formed in the ablation process, deep combustion is hindered, a carbonization layer on the surface of the core material plays a good transition role between an unablated PVC base body and the mica core material, the mica powder is prevented from falling off, and the service life of the flame retardant is prolonged. And the structure of the ablation layer is kept stable, and a good protection effect can still be kept after ablation.

The invention relates to an all-inorganic flexible capacitor and a preparation method thereof, the all-inorganic flexible capacitor comprises at least one all-inorganic flexible capacitor unit, and the all-inorganic flexible capacitor unit comprises a metal electrode, a flexible electrode and a dielectric layer between the two electrodes; the dielectric layer is a metal oxide, the dielectric layer is generated by electrolysis on the surface of the metal foil through an electrochemical oxidation method, the metal foil is not completely electrolyzed, the remaining part of the metal foil after electrolysis serves as a flexible electrode, the dielectric layer is tightly attached to the flexible electrode, and a metal film is deposited on the surface of the dielectric layer to serve as a metal electrode. Compared with the prior art, the full-inorganic flexible capacitor can bear high voltage and is high in energy density, simple in structure and excellent in breakdown resistance, and the preparation method is simple, high in operability, low in cost, suitable for large-scale preparation and high in industrial production feasibility.

The ultra-high voltage anti-breakdown grading ring is provided with a grading ring body, an assembly platform is arranged at the bottom of the grading ring body, the assembly platform is divided into a left platform and a right platform, the left platform, the right platform and the grading ring body are connected in a welded mode, locking holes are formed in the left platform and the right platform, and the left platform and the right platform are connected in a welded mode. The locking holes are locking threaded holes, the assembling requirement between the grading ring and other equipment is met, meanwhile, the anti-breakdown inner cover is arranged in the grading ring, the internal anti-breakdown capacity of the grading ring can be well improved by using the anti-breakdown inner cover, and the overall anti-breakdown capacity of the grading ring is further improved.

The utility model discloses a silicon carbide MOSFET device comprising at least one cell, and each cell comprises a silicon carbide substrate of a first doping type; an epitaxial layer of a first doping type; the well regions of the second doping type are located in the epitaxial layer, and JFET regions are arranged between the adjacent well regions; the source region of the first doping type is located in the well region; the contact region of the second doping type is located in the well region and is adjacent to the source region; the field oxide layer is located on the surface of the epitaxial layer and located above the JFET region; the gate oxide layer comprises a first gate oxide layer and a second gate oxide layer, and the first gate oxide layer and the second gate oxide layer are located on the two sides of the field oxide layer respectively and are adjacent to the field oxide layer respectively; the gate conductors comprise a first gate conductor and a second gate conductor, the first gate conductor covers the surface of the first gate oxide layer and part of the surface of the field oxide layer, the second gate oxide layer covers the surface of the second gate oxide layer and part of the surface of the field oxide layer, and the first gate conductor and the second gate conductor are separated from each other.

The invention provides a high energy storage density AgNb0. 5Zr0. 25Mg0. 25O3 / ZrSiO4 composite ceramic and a preparation method thereof, belongs to the technical field of ceramic materials, and aims to solve the technical problems of low breakdown field strength resistance and low energy storage density of energy storage ceramics. According to the preparation method, the energy storage performance of silver niobate ceramic is improved by adopting a method of combining B-site ion doping with second-phase compounding, firstly, AgNb0. 5Zr0. 25Mg0. 25O3 and ZrSiO4 nano powder is prepared through a microwave hydrothermal reaction method, and the AgNb0. 5Zr0. 25Mg0. 25O3 / ZrSiO4 composite ceramic is obtained through an oscillation pressure sintering method. The prepared AgNb0. 5Zr0. 25Mg0. 25O3 / ZrSiO4 composite ceramic with high energy storage density has relatively high breakdown field strength, relatively high dielectric property, energy storage density and good discharge efficiency, the breakdown field strength reaches 750kV / cm, the maximum energy storage density reaches 7.73 J / cm < 3 >, and meanwhile, the composite ceramic has relatively good temperature stability. The AgNb0. 5Zr0. 25Mg0. 25O3 / ZrSiO4 composite ceramic prepared by the method has the advantages of low cost, nanoscale particles, excellent energy storage performance and the like, is suitable for large-scale production, and shows good application prospects in pulse power energy storage capacitors.

The invention relates to a high electric field breakdown resistant packaging process, which is characterized by comprising three parts, namely chip manufacturing, substrate processing and laminating process, in the chip manufacturing process, a sacrificial material is manufactured on the surface of a wafer, a metal electrode connected with the wafer is arranged after the sacrificial material is etched, and in the substrate processing process, a metal electrode connected with the wafer is arranged after the sacrificial material is etched. A functional material is arranged on the surface of the substrate, finally, in the laminating process, the sacrificial material between the substrate and the chip is removed, and then an insulating material is filled. The process has the advantages that the cleanness between the substrate and the chip is greatly ensured, contamination and residues are avoided, the pollution of a bonding interface can be effectively reduced, the breakdown problem of a device during working is solved, and the breakdown resistance of the device is improved.

The invention relates to the technical field of batteries, and discloses a pole column and a forming process thereof, a battery cell cover plate assembly and a battery cell. The pole forming process comprises the following steps: stamping and blanking a conductive composite board along a Z direction to obtain a pole body; wherein the pole body comprises a first conductive section and a second conductive section; wrapping and limiting the first conductive section, and extruding and expanding the local part of one end, far away from the first conductive section, of the second conductive section along the Z direction, so that an annular flange is formed on the side wall of the second conductive section on the X-Y plane; stamping and stretching the local part of the annular flange to enable the free end of the annular flange to form a pole turnup; wherein the pole turnup comprises a first turnup and a second turnup which are connected with each other, the first turnup extends towards the direction far away from the second conductive section along the Z direction, the first turnup and the first conductive section are arranged at an interval, and the second turnup extends towards the direction far away from the first conductive section. The pole prepared by the invention can reduce heat transferred to the upper plastic, and the insulating property of the pole is guaranteed.

The invention discloses a semiconductor multilayer epitaxial wafer material and a preparation method thereof, and relates to the technical field of semiconductor materials, the semiconductor multilayer epitaxial wafer material comprises a substrate, and the substrate is sequentially provided with a buffer layer, a first multi-element co-doped epitaxial layer, a second multi-element co-doped epitaxial layer and a silicon carbide epitaxial layer; the first multi-element co-doped epitaxial layer is a rare earth, Ga, N and Te co-doped epitaxial layer; and the second multi-element co-doped epitaxial layer is an N and In co-doped epitaxial layer. The semiconductor multilayer epitaxial wafer material disclosed by the invention is low in leakage current and starting voltage and high in breakdown voltage.

The present invention provides a MOSFET structure with a multi-layer gate control region and a preparation method, comprising: a substrate, the substrate comprising a first surface and a second surface arranged oppositely, the first surface covered with a doped drift layer, the surface of the doped drift layer is provided with a gate region and two source regions, the gate region is placed between the source regions; the gate region comprises a gate control region, the gate control region comprises a first gate control layer, a second gate control layer, a third gate control layer, a fourth gate control layer and a fifth gate control layer stacked in sequence and having different concentrations, the first gate control layer covers the doped drift layer. By setting the gate control region, the P-shield layer can be in a floating state when the device is turned on, which helps to improve the injection and distribution of carriers, reduce the lateral JFET resistance to a certain extent, reduce the amount of stored charge, and thereby reduce the on-resistance of the device, improve the reliability of the gate oxide layer, and improve the breakdown resistance of the device.

The utility model belongs to the technical field of thin film deposition, and discloses a lining plate and a coating system. The lining plate comprises a first annular plate, an annular vertical plate and a second annular plate. The first annular plate is used for being annularly arranged on the periphery of a base plate. The annular vertical plate extends in the circumferential direction of the inner side of the first annular plate and forms an angle with the first annular plate. The second annular plate extends inwards along the side, away from the first annular plate, of the annular vertical plate. The second annular plate and the base plate are arranged in a spaced mode. The sides, close to the base plate, of the annular vertical plate and the second annular plate are provided with insulating coatings. According to the lining plate, the problem that the lining plate and the coating substrate are broken down by discharge of equipment is effectively avoided, the yield of products can be improved, and cost waste is avoided.

The invention relates to the technical field of energy storage, and provides a preparation method of high-breakdown-resistance fluorine-containing aromatic polythiourea aiming at the problems of low dielectric constant, low breakdown-resistance strength, large energy loss and the like of a full-flexible polymer film, the preparation method comprises the following steps: firstly, carrying out microwave polymerization on 2, 2-bis (3-amino-4-hydroxyphenyl)-hexafluoropropane (BAHHHFP) and thiourea; a high-molecular F-ArPTU dielectric polymer is prepared; performing vacuum drying to obtain a product F-ArPTU powder; the product is prepared into a dielectric polymer film for testing and verifying the breakdown resistance and the energy storage performance of the dielectric polymer film. The method is simple and efficient in path, and the prepared polymer can be applied to flexible film capacitors.

The invention relates to the technical field of power cables, in particular to a polypropylene composite material, a preparation method thereof and a cable. The polypropylene composite material comprises polypropylene resin, polystyrene resin and a compatilizer, and a preparation method of the compatilizer comprises the following steps: carrying out an esterification reaction on aromatic diboric acid and polyol to generate a didioxoborane intermediate; under the condition of a catalyst, the didioxoborane intermediate and acryloyl chloride are subjected to a reaction, and a didioxoborane acrylate derivative is generated; and under the condition of a free radical initiator, carrying out free radical polymerization reaction on the didioxoborane acrylate derivative, isotactic polypropylene resin and styrene. The compatilizer can significantly improve the compatibility of polypropylene resin and polystyrene resin, and the polypropylene composite material has good toughness and breakdown resistance.

The metal wire annealing device comprises an annealing main body, a detection unit and a peeling box, and the interior of the peeling box is filled with a polishing particle layer used for polishing the surface of a wire. The shape fixing assembly is used for adjusting the shape fixing force of the polishing particle layer, and the control module is electrically connected with the detection unit and the shape fixing assembly. When the detection data of the detection unit is larger than a threshold value, the control module adjusts the shape fixing force of the polishing particle layer through the shape fixing assembly according to the detection data. The detection unit monitors the proportion area of the oxide skin in real time, the control module dynamically adjusts the shape fixing force of the polishing particle layer, the oxide skin with different adhesion amounts can be removed in a targeted mode, the problem of oxide skin residues is solved, the conductivity stability of copper wires is guaranteed, interference of the oxide skin on extrusion of an insulating layer is avoided, the breakdown resistance of the cable is improved, and the service life of the cable is prolonged.

The invention discloses a single-component photovoltaic structural sealant and a preparation method thereof. The bonding strength of the sealant is promoted by controlling a preparation process and adjusting a coupling agent. The preparation method comprises the following steps: 1) adding heavy calcium carbonate, light calcium carbonate, titanium dioxide, magnesium hydroxide and silicone oil into hydroxyl-terminated dimethyl siloxane according to a certain proportion, and carrying out vacuum stirring to obtain a colloid A; 2) adding white carbon black and a cross-linking agent into A in batches, and performing vacuum stirring to obtain colloid B; and (3) mixing a coupling agent, a catalyst and acetylacetone, adding the mixture into the colloid B to obtain colloid C, continuously vacuumizing the colloid C, and subpackaging to obtain a finished product. According to the present invention, the surface drying time and the deep curing effect of the product are excellent, the elongation at break of the glue can be increased, the toughness can be improved, further, the efficiency required by the industrial production is improved, and the curing depth of the photovoltaic glue product at different temperatures and humidity is good.

The invention discloses high-temperature-resistant boron nitride fiber insulation paper and a preparation method thereof. The preparation method comprises the following steps: preparing composite boron nitride fibers, preparing composite boron nitride powder, compounding, preparing composite quartz powder, preparing composite silica sol, mixing, forming, performing ultraviolet treatment and drying. In the step of mixing, composite boron nitride, composite quartz powder, composite silica sol, polyethylene glycol 400, polyvinyl alcohol 1788, polyvinylpyrrolidone, benzoin dimethyl ether and water are mixed and then stirred at room temperature for 1-1.5 h, and a mixture is obtained; the high-temperature-resistant boron nitride fiber insulation paper prepared by the preparation method disclosed by the invention is good in high temperature resistance, flexibility, insulativity, breakdown resistance and hydrophobicity.

The invention discloses a CCM membrane electrode cutting method and system. The cutting method of the CCM membrane electrode comprises the steps that S1, a CCM membrane electrode sheet and a protective gasket material are placed on a conveying belt, and the protective gasket material is located below the CCM membrane electrode sheet; wherein the conveying belt is a metal belt and is arranged to be capable of adsorbing a CCM membrane electrode sheet positioned on the conveying belt in a vacuum manner; s2, performing laser cutting on the CCM membrane electrode sheet on the conveying belt under the protection of inert gas so as to cut out CCM membrane electrode monomers; wherein the CCM membrane electrode sheet is completely cut off, and the protective gasket sheet is not cut off; s3, drying and shaping the CCM membrane electrode monomer; and S4, removing the dried and shaped CCM membrane electrode monomer. According to the cutting method and system of the CCM membrane electrode, the cutting loss of the CCM membrane is small, the quality of the cutting surface is high, and the performance of the obtained CCM membrane electrode is improved.

The utility model discloses a blasting bus for a detonator, which comprises an insulating protective layer, a fine metal net, three copper wires, three cords and a steel wire, the fine metal net is fixedly arranged in the insulating protective layer, and the three copper wires and the three cords are arranged in the insulating protective layer and are distributed in an annular array at intervals. The three copper wires and the three ropes are all in close contact with the inner wall of the insulation protection layer, and the steel wire is arranged at the axis position of the insulation protection layer and is in close contact with the three copper wires. The explosion bus is reasonable in design and good in practicality, can effectively protect the internal copper wire when being impacted by a sharp object, improves the roundness and tensile property of the explosion bus through the rope, can effectively improve the heat resistance and flame retardance of the explosion bus, and meanwhile, the talcum powder can improve the breakdown resistance and wear resistance of the explosion bus, so that the service life of the explosion bus is prolonged, and the service life of the explosion bus is prolonged. And the service life of the blasting bus is prolonged.

This invention discloses a flame-retardant, breakdown-resistant capacitor base film and its preparation method. The raw materials, by weight, include: 100 parts polypropylene; 3.5-8.5 parts compatibilizer; 14-25 parts flame-retardant dielectric modifier; 0.3-1 parts antioxidant; and 0.5-1.8 parts nucleating agent. The flame-retardant dielectric modifier is a composite microcapsule obtained by coating the core material with nano-magnesium hydroxide and silica-modified polydopamine. By adding a flame-retardant dielectric modifier to the polypropylene system, this invention imparts excellent flame-retardant properties to the prepared polypropylene capacitor base film, while also improving its mechanical strength, increasing the dielectric constant of the base film, and enhancing its breakdown resistance, thus improving its overall performance.

The invention relates to the field of semiconductors, in particular to a preparation method of a TMBS device, which comprises the following steps: step 1, taking a monocrystalline silicon material as a substrate material; 2, forming an indium nitride buffer layer on the upper surface of the substrate layer through a chemical vapor deposition method; step 3, growing a layer of germanium indium antimonide on the surface of the buffer layer as an epitaxial layer by using a chemical vapor deposition method; step 4, forming a groove; and step 5, setting a Schottky barrier, and setting a metal layer to obtain the required TMBS device. The epitaxial layer is germanium indium antimonide, compared with indium antimonide, the surface defect is lower, better breakdown resistance is achieved, and the TMBS device has wide application prospects in the fields of power electronics, new energy automobiles, photovoltaics and the like.

The present application relates to the field of metal soft magnetic powder cores, and in particular to a high-insulation and high-reliability metal soft magnetic powder core and a preparation method thereof. The preparation method comprises the following steps: S1, powder passivation; S2, surface modification; S3, insulation coating; S4, compression molding; S5, first heat treatment; S6, second heat treatment: subjecting the cured part to high-temperature heat treatment under vacuum to obtain a high-insulation and high-reliability metal soft magnetic powder core. The preparation method of the present application is simple, with mild reaction conditions and low cost. At the same time, it simplifies the existing process flow and can be automated for large-scale production. The present application successfully prepared a high-insulation and high-reliability metal soft magnetic powder core with both high magnetic permeability and high toughness through a series of innovative technical means and process improvements. This material not only has excellent magnetic properties and insulation properties, but also shows obvious advantages in cost control, production efficiency and environmental protection.

The invention relates to a semiconductor device and a semiconductor device preparation method. The semiconductor device comprises a substrate; the epitaxial layer is arranged on one side of the substrate, and a first groove is formed in the surface of the side, away from the substrate, of the epitaxial layer; the grid electrode is at least partially located in the first groove; the first oxide layer is located at the bottom of the first groove and comprises a plane part and a curved surface part connected with the edge of the plane part, the curved surface part faces the grid electrode, and the corner of the grid electrode is matched and connected with the curved surface part; the gate dielectric layer is arranged on the side wall of the gate, and the thickness of the first oxide layer is larger than that of the gate dielectric layer. The first oxide layer at the bottom of the first groove and the corner position of the grid electrode are smoothed, the peak electric field intensity of the corner position is reduced, the breakdown resistance of the device is improved, and the reliability of the device is improved.

The invention relates to the field of semiconductors, in particular to a preparation process of a TMBS device, which comprises the following steps of: 1, cutting, polishing, cleaning and drying a silicon substrate in sequence, and using the silicon substrate as a substrate material; 2, forming an epitaxial layer on the upper surface of the substrate material; step 3, processing the epitaxial layer in an etching mode to form a groove, forming an oxide layer on the inner surface of the groove, and then filling the groove with polycrystalline silicon; and 4, setting a Schottky barrier layer, setting a metal electrode, and leading out a positive electrode and a negative electrode through the metal electrode, thereby completing the preparation of the TMBS device. According to the device prepared by the invention, the germanium bismuth selenide is used as the epitaxial layer, so that the breakdown characteristic of the device and unstable factors of leakage current are well improved, the breakdown resistance is improved, the leakage current density is reduced, and the reliability of the device is improved.

The invention discloses a nano-composite dielectric film with a multilayer gradient structure and a preparation method thereof, the nano-composite dielectric film comprises symmetrically arranged outer pressure-bearing layers and a polarization layer located between the two pressure-bearing layers, and is characterized in that a buffer layer is arranged between the pressure-bearing layers and the polarization layer, and the buffer layer is formed by mixing P (VDF-HFP) and PMMA according to a volume ratio of 60%; the pressure-bearing layer, the polarization layer and the buffer layer are filled with Ni (OH) 2. The preparation method comprises the following steps: 1) preparing Ni (OH) 2 nanosheets by adopting a hydrothermal method; 2) adding the Ni (OH) 2 nanosheets into the pressure-bearing layer, the buffer layer and the polarization layer, and carrying out electrostatic spinning according to a multilayer gradient structure; (3) performing hot-pressing film forming under a preset condition to obtain a nano composite dielectric thin film with a multi-layer gradient structure; the method has the advantages that the dielectric difference between different functional layers of the multilayer structure can be obviously relieved, the breakdown field strength and dielectric constant are improved, and the energy storage density is improved.

The invention belongs to the field of cables, and provides a polyolefin high polymer blend which comprises the following components in parts by weight: 100 parts of polyethylene, 40-60 parts of polyisobutene, 10-20 parts of polystyrene, 30-65 parts of an additive, 1-5 parts of a plasticizer, 10-50 parts of a flame-retardant compounding agent, 1-3 parts of a lubricant, 0.5-2 parts of a cross-linking agent and 0-1 part of a performance additive, the invention further provides an ultrahigh-voltage cable which comprises a plurality of cable cores, and a filling layer, a flame-retardant layer, a first inner sheath, an insulation reinforcing layer, a semiconductor insulation shielding layer, a metal shielding layer, a second inner sheath, an armor layer and an outer sheath are sequentially arranged outside the cable cores. The first inner sheath, the second inner sheath and the outer sheath are all made of the polyolefin high polymer blend provided by the invention. The ultrahigh-voltage cable is improved from the aspects of material and structure, the insulativity and electric breakdown resistance of the ultrahigh-voltage cable are improved, the actual service life of the ultrahigh-voltage cable is prolonged, the flame retardance is also improved, and the ultrahigh-voltage cable is suitable for large-scale popularization.

The invention provides a metal oxide semiconductor field effect transistor (MOSFET) structure with multiple layers of grid control areas and a preparation method, the MOSFET structure comprises a substrate, the substrate comprises a first surface and a second surface which are oppositely arranged, the first surface is covered with a doped drift layer, the surface of the doped drift layer is provided with a grid area and two source electrode areas, and the grid area is arranged between the source electrode areas; the gate region comprises a gate control region, the gate control region comprises a first gate control layer, a second gate control layer, a third gate control layer, a fourth gate control layer and a fifth gate control layer which are stacked in sequence and have different concentrations, and the first gate control layer covers the doped drift layer. By arranging the gate control region, the P-shield layer can be in a floating state when the device is switched on, so that the injection and distribution conditions of carriers can be improved, the transverse JFET resistance is reduced to a certain extent, the stored charge quantity is reduced, the on-resistance of the device is further reduced, the reliability of the gate oxide layer is improved, and the breakdown resistance of the device is improved.