Double-inlay structure and its making method

Abstract

The invention discloses a making method of double-mosaic structure, which comprises the following steps: making burying covering layer on the metal dielectric layer to form the metal dielectric layer and through-hole and groove in the burying covering layer; covering etching stopping layer on the substrate with metal pattern; covering the metal dielectric layer on the etching stopping layer; forming burying covering layer on the metal dielectric layer; etching the groove and through-hole to sediment metal through photoetching; making the meta dielectric layer surface protected by burying covering layer from damaging in the moving photoetching agent course of chemical mechanic grinding and plasma; improving the reliability of elements.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a dual damascene structure and a manufacturing method thereof. Background technique [0002] The dual damascene process was developed in the context of increasingly smaller semiconductor devices using metallic copper for back-end interconnection. Different from the aluminum process, the copper process is to etch the through holes and trenches on the dielectric layer, and then use the deposition method to fill the metal copper into the through holes and trenches. Chinese Patent Application No. 02106882.8 discloses a dual damascene process, in which there are two types of processes: forming a through hole first and then forming a trench, and forming a trench first and then forming a through hole. The dual damascene process is shown in FIG. 1A , there is a dielectric layer 115 on the substrate 100 and a metal pattern layer 105 formed in the dielectric layer 115 ...

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Problems solved by technology

[0005] Therefore, the object of the present invention is to provide a dual damascene structure and its manufacturing method to solve the problem in the prior art that chemical mechanical grinding causes damage to the intermetallic dielectric layer with a smaller hardness and a lower dielectric constant. Problems such as residual defects on the intermetallic dielectric layer after chemical mechanical polishing are difficult to clean and the problem of oxygen plasma damage to the surface of the intermetallic dielectric layer during the photoresist removal process in the prior art

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