The invention discloses a light-emitting
diode and a manufacturing method thereof. The light-emitting
diode comprises a light-emitting epitaxial layer, a transparent conductive layer, a
protection layer and a first
electrode, wherein the light-emitting epitaxial layer sequentially comprises a first
semiconductor layer, a light-emitting layer and a second
semiconductor layer from top to bottom; a first
electrode area is arranged on the upper surface of the light-emitting epitaxial layer; the first
electrode area comprises a bonding pad area and an expansion area; the transparent conductive layer is formed on the surface of the first
semiconductor layer of the light-emitting epitaxial layer, a first opening is formed in the bonding pad area, and the surface, in the bonding pad area, of the first semiconductor layer is exposed; the
protection layer is formed on the surface of the transparent conductive layer, a second opening and a third opening are formed in the bonding pad area and theexpansion area of the first electrode area separately, and the surface, in the bonding pad area, of the first semiconductor layer and the surface, in the expansion area, of the transparent conductivelayer are exposed; and the first electrode is formed on the
protection layer, and is in direct contact with the first semiconductor layer of the bonding pad area through the first opening and the second opening.