The invention provides a multi-gate SOI-
LDMOS device structure which comprises an
SOI substrate, an active region and a
polysilicon gate. The
SOI substrate comprises a
silicon substrate body, an
oxygen buried layer and a top
silicon layer, the active region is formed in the top
silicon layer and comprises a source region, a channel region, a drift region, a shallow
doping drain region and a drain region, the source region, the channel region, the drift region, the shallow
doping drain region and the drain region are sequentially connected, the
polysilicon gate comprises a gate-
oxide layer and a polysilicon layer, the gate-
oxide layer is combined to the surface of the channel region, the
polysilicon gate is separated by at least one
dielectric layer into two short gate structures, and heavy
doping regions inversed with the channel region in doping type are formed corresponding to the position, below the
dielectric layer, in the channel region. The multi-gate SOI-
LDMOS device structure has the advantages of being high in
breakdown voltage, good in
transconductance characteristic, small in positive break-over resistance, low in self-
heating effect and the like. As the heavy doping regions inversed with the channel region in doping type are formed between short gates, when a device is irradiated, the heavy doping regions serve as recombination centers, the large number of recombination centers are provided for
electron hole pairs generated by
irradiation, and the whole
radiation resisting performance of the device is accordingly improved.