Radio frequency SOI LDMOS device with close body contact

Abstract

The invention relates to the field of a radio frequency power device, and discloses a radio frequency SOI LDMOS device with close body contact. The device comprises bottom layer silicon, an embedding oxidation layer, top layer silicon, a P<-> region an N<-> region, a gate oxidation layer, a polysilicon gate layer, a gate poly-silicide layer, a gate electrode, a silicon nitride side wall, an N<-> drift region, a drain region, a drain region silicide layer, a drain electrode, a source region, a body contact region, a body region, a source region silicide layer and a source electrode. The radio frequency LDMOS device is manufactured on an SOI substrate, and forms the close body contact which is in short circuit with the source region by utilizing a heavily doped region in the same form as the P<-> region; the source / body, a drain / body and the gate and the electrodes are interconnected by the silicide; a plurality of gate bars are connected in parallel in the forked mode so as to improve the driving capability of the device; a method for adjustment, back-gate injection, N<-> region injection and N<-> drift region injection, which is compatible with the CMOS process, is designed; and amethod for hiding the silicide in the N<-> drift region, which is compatible with the CMOS process, is designed.

Description

technical field [0001] The invention relates to the field of radio frequency power devices, in particular to a radio frequency SOI LDMOS device with close contact. Background technique [0002] Laterally Diffused Metal Oxide Semiconductor process technology (LDMOS, Laterally Diffused Metal Oxide Semiconductor) is mainly used for RF power amplifiers of mobile phone base stations in the early stage, due to its high sensitivity, high efficiency, high gain, low distortion, low noise, low thermal resistance, and stable frequency , low intermodulation distortion performance and strong automatic gain control capabilities, LDMOS devices are widely used in CDMA, W-CDMA, TETRA, digital terrestrial television and other fields that require wide frequency range, high linearity and high service life, but LDMOS It also has its own limitations, such as low power density, anti-ESD, anti-total dose radiation and poor ability to resist single-event radiation. By combining SOI technology and C...

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Problems solved by technology

[0002] Laterally Diffused Metal Oxide Semiconductor process technology (LDMOS, Laterally Diffused Metal Oxide Semiconductor) is mainly for RF power amplifiers of mobile phone base stations in the early stage, because of its high sensitivity, high efficiency, high gain, low distortion, low noise, low thermal resistance, stable frequency , low intermodulation distortion performance and strong automatic gain control capabilities, LDMOS devices are widely used in CDMA, W-CDMA, TETRA, digital terrestrial television and other fields that require wide frequency range, high linearity and high service life, but LDMOS It also has its own limitations, such as low power density, anti-ESD, anti-total dose radiation and poor anti-single event radiation ability, etc.

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