The invention discloses a radio frequency silicon on insulator(SOI) laterally diffused metal oxide semiconductor (LDMOS) device provided with a low potential barrier body lead-out, which comprises a bottom layer silicon, a concealed oxide layer, a top layer silicon, a P-region, a N-region, a gate oxide layer, a polysilicon gate layer, a gate polycrystalline silicon carbide layer, a gate electrode, a side wall, a N-drift region, a drain region, a drain region silicate layer, a leakage electrode, a source region, a low potential barrier body lead-out region, a body region, a source region silicide layer, and a source electrode. In the invention, the radio frequency LDMOS device is manufactured on an SOI substrate, and a low potential barrier body lead-out is in a short circuit with the source region is formed by utilizing a heavily doped region homotypic with the P- region; the source / body, leakage / body as well as a gate is interconnected with each electrode by utilizing a silicide; a plurality of grate bars are in interdigital type parallel connection so as to enlarge the driving power of the device; and the invention provides a method for rectifying, back gate injection, N-regioninjection as well as N-drift region injection compatible with a complementary metal-oxide-semiconductor (CMOS) technology, as well as a N-drift region silicide conceal method compatible with the CMOStechnology.