32results about How to "Has radiation resistance" patented technology

The invention relates to the field of a radio frequency power device, and discloses a radio frequency SOI LDMOS device with close body contact. The device comprises bottom layer silicon, an embedding oxidation layer, top layer silicon, a P region an N region, a gate oxidation layer, a polysilicon gate layer, a gate poly-silicide layer, a gate electrode, a silicon nitride side wall, an N drift region, a drain region, a drain region silicide layer, a drain electrode, a source region, a body contact region, a body region, a source region silicide layer and a source electrode. The radio frequency LDMOS device is manufactured on an SOI substrate, and forms the close body contact which is in short circuit with the source region by utilizing a heavily doped region in the same form as the P region; the source/body, a drain/body and the gate and the electrodes are interconnected by the silicide; a plurality of gate bars are connected in parallel in the forked mode so as to improve the driving capability of the device; a method for adjustment, back-gate injection, N region injection and N drift region injection, which is compatible with the CMOS process, is designed; and a method for hiding the silicide in the N drift region, which is compatible with the CMOS process, is designed.

The invention discloses high strength rubber with both the radiation resistance and the thermal aging resistance, which comprises the following components in parts by weight: 100 parts of crude rubber, 1 to 50 parts of rare earth salt, 10 to 100 parts of reinforcing agent and 0 to 20 parts of other ingredients. The high strength rubber with both the radiation resistance and the thermal aging resistance of the invention has strong environmental adaptability, has tensile strength of over 16MPa and tearing strength of over 40KN/m after being irradiated under the condition of 300KGy, can be used for producing various rubber products with various radiation resistance properties, which comprise a rubber gasket, a seal part, a shock absorbing and buffering part, a spacer bush, a diaphragm and the like, can be widely applied to the environment with high energy radiation in various fields of aerospace, nuclear industry, electronic communication, chemical industry, medicine, watercraft and the like, and has good economic benefits and popularization value.

The invention discloses a radio frequency silicon on insulator(SOI) laterally diffused metal oxide semiconductor (LDMOS) device provided with a low potential barrier body lead-out, which comprises a bottom layer silicon, a concealed oxide layer, a top layer silicon, a P-region, a N-region, a gate oxide layer, a polysilicon gate layer, a gate polycrystalline silicon carbide layer, a gate electrode, a side wall, a N-drift region, a drain region, a drain region silicate layer, a leakage electrode, a source region, a low potential barrier body lead-out region, a body region, a source region silicide layer, and a source electrode. In the invention, the radio frequency LDMOS device is manufactured on an SOI substrate, and a low potential barrier body lead-out is in a short circuit with the source region is formed by utilizing a heavily doped region homotypic with the P- region; the source/body, leakage/ body as well as a gate is interconnected with each electrode by utilizing a silicide; a plurality of grate bars are in interdigital type parallel connection so as to enlarge the driving power of the device; and the invention provides a method for rectifying, back gate injection, N-region injection as well as N-drift region injection compatible with a complementary metal-oxide-semiconductor (CMOS) technology, as well as a N-drift region silicide conceal method compatible with the CMOS technology.

The invention discloses a formula for a multifunctional surface treating agent applied to aqueous leather. The formula comprises 3 to 35% of an aqueous polyurethane emulsion, 0.5 to 20% of a multifunctional finishing agent, 2 to 15% of aqueous wax, 0.3 to 3% of a leveling agent, 0.5 to 1.5% of a thickening agent, 0.5 to 1% of an antifoaming agent and 24.5 to 93.2% of water. The preparation processcomprises the following steps: adding all the above raw materials except the thickening agent into a container in proportion, carrying out uniform mixing through a dispersator, then carrying out filtering and adding the thickening agent to adjust viscosity so as to obtain the surface treating agent. The surface treating agent provided by the invention endows synthetic leather with special performances like antibacterial, sterilizing, anti-ultraviolet, anti-radiation, flame-retardant, temperature-adjusting, color-changing, self-cleaning and anti-doodling performances without any influence on the fastness and handfeel of the synthetic leather, and substantially prolongs the service life of the synthetic leather; a product having been treated with the surface treating agent has better handfeel and presents better visual impression; and the surface treating agent greatly improves the physical properties of the synthetic leather and allows the synthetic leather to have more excellent scrape resistance, water resistance, fire resistance and the like.

The invention discloses an anti-radiation wide-spectrum optical-fiber light source based on photo-bleaching. The optical-fiber light source is a multi-pump double-pass backward structure and adopts an erbium-doped photo crystal optical fiber as a gain medium. A tail fiber of a 980nm laser is in fusion connection with one end of a first wavelength division multiplexer; a tail fiber of a 810nm laser is in fusion connection with one end of a third wavelength division multiplexer; a tail fiber of a 665nm laser is in fusion connection with the third wavelength division multiplexer; the other two ends of the first wavelength division multiplexer are in fusion connection with a second optical spectrum filter and an erbium-doped photo crystal optical fiber; one end of the second wavelength division multiplexer is in fusion connection with the erbium-doped photo crystal optical fiber, and the other two ends of the second wavelength division multiplexer are in fusion connection with the first optical spectrum filter and the third wavelength division multiplexer; and a fiber leading-out end of the second optical spectrum filter is in fusion connection with a fiber leading-in end of an optical fiber isolator, and a fiber leading-out end of the optical fiber isolator is used as a light output end. Multiple special wavelength lasers are used for simultaneously pump to realize the effective photo-bleaching, so that the stability of the average wavelength and the output power of the erbium-doped optical fiber light source can be guaranteed under the space radiation environment.

The invention discloses a nuclear power cable insulating material of a metal hydroxide-boron nitride hybridized filler/blended rubber and a preparation method thereof. The preparation method comprisesthe steps that metal hydroxide with methyl methacrylate and ionic liquid copolymer being grafted on is loaded on the surface of boron nitride, and then boron nitride is blended and compounded with EVA/ethylene propylene rubber, a cross-linking agent, a compatilizer and an anti-aging agent at the proper proportions. The invention utilizes the electronic insulation property, the radiation resistance and the ultrahigh adsorption property of boron nitride to load grafted and modified metal hydroxide to compose a radiation-resistant and capacity-increasing hybridized filler based on a modified filler, and meanwhile produces the nuclear power cable insulating material with the outstanding flame resistance, radiation resistance, electrical property, free halogen and low smoke and mechanical property by utilizing the radiation resistance of ionic liquid to improve the radiation resistance of the material.

The invention relates to the field of radio frequency power devices, and discloses a radio frequency SOI LDMOS device with H-shaped gate. The device comprises bottom layer silicon, an embedding oxide layer, top layer silicon, a P region, an N region, an H-shaped gate oxide layer, an H-shaped polysilicon gate layer, an H-shaped gate poly-silicide layer, a gate electrode, a silicon nitride side wall, an N drift region, a drain region, a drain region silicide layer, a drain electrode, a source region, a body lead-out region, a source region silicide layer and a source electrode. The radio frequency LDMOS device is manufactured on an SOI substrate, and forms the body lead-out which is in short circuit with the source region by utilizing a heavily doped region in the same form as the P region; the source/body, a drain/body and the gate and the corresponding electrodes are interconnected by the silicide; and a plurality of gate bars are connected in parallel in the forked mode so as to improve the driving capability of the device. Simultaneously, the invention discloses a method for adjustment, back-gate injection, N region injection and N drift region injection, which is compatible with the CMOS process and a method for hiding the silicide in the N drift region, which is compatible with the CMOS process.

The invention discloses a ferrite switch driver with a self-feedback latch switch-off function. The ferrite switch driver comprises a logic conversion circuit, a driver amplifying circuit, an H-bridgepower driving circuit and a comparator feedback circuit. The logic conversion circuit receives a superior control signal and a feedback signal of the comparator feedback circuit, processes the signals, inputs the signals to the driver amplification circuit for amplification, and then inputs the signals to the H-bridge power drive circuit to drive the ferrite coil. Meanwhile, the comparator feedback circuit samples the current of the ferrite coil, and when the current reaches a preset value, the comparator feedback circuit sends a positive pulse to the logic conversion circuit to turn off theH-bridge power driving circuit. Under the condition that a microcontroller or an FPGA or a CPLD is not used, the ferrite coil can be effectively driven to the preset current, and automatic feedback and latch turn-off can be achieved. Compared with a ferrite switch driver using a microcontroller or an FPGA or a CPLD, the ferrite switch driver has the advantages of being simple in structure, lower in cost, higher in speed and higher in reliability.

The invention relates to an SRAM (Static Random Access Memory) storage unit and an SRAM storage array, wherein the SRAM storage unit comprises a first double-grid PMOS (P-channel Metal Oxide Semiconductor) transistor, a second double-grid PMOS transistor, a first NMOS (N-channel Metal Oxide Semiconductor) transistor, a second NMOS transistor, a first transmission transistor, a second transmission transistor and a compensation unit. The SRAM storage unit and the SRAM storage array have the advantage that the event upset effect of the SRAM storage unit can be overcome.

The invention discloses a processing technology of a vacuum forming box of a new energy automobile. The processing technology comprises the following steps: (1) manufacturing a mold; (2) manufacturingmaterials; (3) performing vacuum forming; and (4) performing surface treatment. The processed vacuum forming box is simple in processing technology, adopts the improved PVC resin material, is suitable for new energy automobiles and has certain radiation resistance, meanwhile, the protective liquid is sprayed on the surface of the vacuum forming box, so that the vacuum forming box has certain radiation resistance and scratch resistance, and is suitable for new energy automobiles.

The invention discloses a low-jitter charge pump with radiation resistance characteristics. The low-jitter charge pump comprises a current mirror unit, a differential circuit unit and a push-pull amplifier, wherein input current I passes through the current mirror unit and generates bias current Iss1 and Iss2; meanwhile, an input end of the current mirror unit is connected with the input end of the push-pull amplifier and negative feedback is formed through the push-pull amplifier; and the differential circuit unit is provided with stable bias current. The low-jitter charge pump has the advantages of being simple in structure, low in cost, easy to implement and good in effect.

The invention belongs to the technical field of materials for the material nuclear industry, and particularly relates to a chip anti-radiation packaging material and an anti-radiation packaging process. The chip anti-radiation packaging material is formed by doping wide bandgap semiconductor particles in a plastic packaging material, and the weight ratio of the wide bandgap semiconductor particles is 10-75%. The chip anti-radiation packaging process comprises the following steps: firstly, growing an anti-radiation layer on the back surface of a copper substrate, welding a chip on the front surface of the copper substrate, and bonding the chip with a pin of the copper substrate; then weighing a plastic packaging material and the doped particles, putting the plastic packaging material and the doped particles into a mold with a preset stirring temperature, and uniformly stirring, so as to obtain a plastic packaging material composite material after the stirring time is ended; and finally, carrying out injection molding and press sealing on the uniformly stirred plastic packaging composite material, and carrying out pin electroplating and burr and flash removal on the plastic packaged chip. The radiation-proof performance of the whole chip and the reliability in the space environment are improved, and meanwhile, the radiation-proof capability of the back of a chip device is improved.

The invention provides an anti-radiation erbium-doped photonic crystal fiber light source for a high-precision fiber-optic gyroscope. The fiber light source is of a multi-pumping double-pass backward structure and adopts a self-prepared erbium-doped photonic crystal fiber as a gain medium. A system light path comprises a 980nm laser, a 665nm laser, a first wavelength division multiplexer, an erbium-doped photonic crystal fiber, a second wavelength division multiplexer, a first spectral filter, a second spectral filter and an optical fiber isolator. According to the optical fiber light source disclosed by the invention, effective light fading is realized by simultaneously pumping special wavelength laser, so that the stability of the average wavelength and the output power of the erbium-doped optical fiber light source in a space irradiation environment is ensured; meanwhile, a flat spectrum filter is adopted to filter and shape an output spectrum, so that the light source has a large bandwidth, the light source has a relatively low relative intensity noise characteristic, and the light source is particularly suitable for space application of a high-precision fiber-optic gyroscope.

The invention discloses a multi-gap transient magnetic field sensor. The sensor comprises a shell and a cable assembly arranged in the shell. The cable assembly comprises a closed annular coil definedby a flexible circuit board and a coaxial cable. The closed annular coil is arranged at one end of the shell, and the coaxial cable is electrically connected with the closed annular coil and is led out of the other end of the shell. The invention relates to the field of magnetic field sensors and provides a multi-gap transient magnetic field sensor, the problem of electric field signal interference can be overcome, the influence of an electric field on magnetic field measurement can be effectively reduced, meanwhile, a relatively high bandwidth can be obtained, and the sensor has a certain anti-radiation effect.