sram storage unit reinforcement method and sram storage array based on dice structure

Abstract

The invention relates to the technical field of integrated circuits, and relates to a SRAM storage unit reinforcement method based on a DICE structure and an SRAM storage array. The method includes: on the basis of the circuit design of the double interlocked memory cell DICE structure, adding an NMOS isolation tube between the NMOS transistors that can not share the source terminal and the drain terminal with the switching function, and the gate of the added NMOS isolation tube is added. Connect to GND. The problem of leakage current generated between adjacent NMOS transistors under the total dose of radiation in the existing layout technology is solved. The layout of sensitive MOS transistors in circuit design is crossed to increase the distance of sensitive nodes, thereby greatly reducing the probability of circuit flipping during single particle radiation. The effect of making the SRAM memory cells and arrays resistant to radiation without affecting the function is achieved.

Description

technical field [0001] The present invention relates to the technical field of integrated circuits, in particular to a method for strengthening an SRAM storage unit based on a DICE structure and an SRAM storage array. Background technique [0002] SRAM (Static Random-Access Memory, static random access memory) is widely used in the aerospace field. Due to the complex space application environment, the interaction of high-energy charged particles in space with the device, resulting in changes in the electrical parameters of the memory, data errors or loss and failure to work properly, how to ensure the normal operation of the device in the radiation environment and improve the radiation resistance of the SRAM memory cell, It has been a research hotspot for a long time. [0003] The standard SRAM basic memory cell structure has no value for use in a radiation environment. In the prior art, the transistors are isolated by field oxygen. In the conventional environment, the fi...

AI Technical Summary

Problems solved by technology

In a conventional environment, field oxygen has no conductive channel, and there will be no leakage current, but in a radiation environment, it is possible to form an inversion leakage channel under the field oxygen, thereby extending to the source / drain region of the adjacent NMOS, resulting in Leakage current occurs between adjacent NMOS transistors

At the same time, single-event radiation may also cause device flipping and functional failure

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