Radio frequency SOI LDMOS device with H-shaped gate

Abstract

The invention relates to the field of radio frequency power devices, and discloses a radio frequency SOI LDMOS device with H-shaped gate. The device comprises bottom layer silicon, an embedding oxide layer, top layer silicon, a P region, an N region, an H-shaped gate oxide layer, an H-shaped polysilicon gate layer, an H-shaped gate poly-silicide layer, a gate electrode, a silicon nitride side wall, an N drift region, a drain region, a drain region silicide layer, a drain electrode, a source region, a body lead-out region, a source region silicide layer and a source electrode. The radio frequency LDMOS device is manufactured on an SOI substrate, and forms the body lead-out which is in short circuit with the source region by utilizing a heavily doped region in the same form as the P region; the source / body, a drain / body and the gate and the corresponding electrodes are interconnected by the silicide; and a plurality of gate bars are connected in parallel in the forked mode so as to improve the driving capability of the device. Simultaneously, the invention discloses a method for adjustment, back-gate injection, N region injection and N drift region injection, which is compatible with the CMOS process and a method for hiding the silicide in the N drift region, which is compatible with the CMOS process.

Description

technical field [0001] The invention relates to the field of radio frequency power devices, in particular to a radio frequency SOI LDMOS device with an H-shaped gate. Background technique [0002] Laterally Diffused Metal Oxide Semiconductor process technology (LDMOS, Laterally Diffused Metal Oxide Semiconductor), mainly for radio frequency (RF) power amplifiers of mobile phone base stations in the early stage. Due to its advantages of high sensitivity, high efficiency, high gain, low distortion, low noise, low thermal resistance, stable frequency, low intermodulation distortion performance and strong automatic gain control capability, LDMOS devices are widely used in CDMA, W-CDMA, TETRA , digital terrestrial television and other fields that require wide frequency range, high linearity and long service life. [0003] However, LDMOS also has its own limitations, such as low power density, anti-ESD, anti-total dose radiation, and poor ability to resist single-event radiation....

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Problems solved by technology

[0003] However, LDMOS also has its own limitations, such as low power density, ESD resistance, total dose radiation resistance and poor resistance to single event radiation, etc.

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