Radio frequency SOI LDMOS device with close body contact
A device, radio frequency technology, applied in the field of radio frequency SOI LDMOS devices, can solve the problems of poor anti-total dose radiation resistance to single particle radiation, low intermodulation distortion performance, low power density, etc., to achieve a wide range of applications, high stability, The effect of high temperature resistance
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[0053] In order to make the objectives, technical solutions, and advantages of the present invention clearer, the following further describes the present invention in detail in conjunction with specific embodiments and with reference to the accompanying drawings.
[0054] Such as figure 1 As shown, figure 1 It is a schematic diagram of the structure of a radio frequency SOILDMOS device with close body contact provided by the present invention. The LDMOS device uses a silicon-on-insulator SOI consisting of top silicon 3, buried oxide layer 2 and bottom silicon 1 in order from top to bottom as the basic structure. LDMOS devices include:
[0055] P placed on the upper surface of the buried oxygen layer - District 20, in the immediate vicinity of P - Set the first N on both sides of zone 20 - Zone 23 and second N - District 24;
[0056] The first gate oxide layer 7 and the second gate oxide layer 8 provided on the upper surface of the top layer silicon 3;
[0057] The first polysili...
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