1 results about "Polycide" patented technology

This invention discloses a method for manufacturing a single-particle radiation-resistant VDMOS device based on polysilicide interconnects, belonging to the field of power switching devices. First, a silicon wafer material is provided, and then P... + Injection to form P + Low resistance; then at P + Polycrystalline materials and polysilicides are fabricated on low-resistivity surfaces to reduce the interconnect line width of the polysilicides; then contact holes and silicon via structures are fabricated; finally, P-type silicon vias are implemented after the silicon vias are formed. ++ The process involves injection, followed by the fabrication of the metal structure. This invention improves and optimizes the polycrystalline interconnect structure of radiation-hardened VDMOS devices by using polycrystalline silicide instead of polycrystalline silicide, reducing the width of the polycrystalline silicide interconnect lines to 0.1 times that of the polycrystalline interconnect lines. This reduces the silicon surface voltage when a single particle passes through the device, thus achieving single-particle hardening of the VDMOS device.