Radio frequency laterally diffused metal oxide semiconductor (LDMOS) device based on silicon on insulator (SOI) and method for injecting device

Abstract

The invention discloses a radio frequency silicon on insulator(SOI) laterally diffused metal oxide semiconductor (LDMOS) device provided with a low potential barrier body lead-out, which comprises a bottom layer silicon, a concealed oxide layer, a top layer silicon, a P-region, a N-region, a gate oxide layer, a polysilicon gate layer, a gate polycrystalline silicon carbide layer, a gate electrode, a side wall, a N-drift region, a drain region, a drain region silicate layer, a leakage electrode, a source region, a low potential barrier body lead-out region, a body region, a source region silicide layer, and a source electrode. In the invention, the radio frequency LDMOS device is manufactured on an SOI substrate, and a low potential barrier body lead-out is in a short circuit with the source region is formed by utilizing a heavily doped region homotypic with the P- region; the source/body, leakage/ body as well as a gate is interconnected with each electrode by utilizing a silicide; a plurality of grate bars are in interdigital type parallel connection so as to enlarge the driving power of the device; and the invention provides a method for rectifying, back gate injection, N-region injection as well as N-drift region injection compatible with a complementary metal-oxide-semiconductor (CMOS) technology, as well as a N-drift region silicide conceal method compatible with the CMOS technology.

Description

technical field [0001] The invention relates to the technical field of radio frequency power devices, in particular to a radio frequency SOI LDMOS device with low potential barrier body extraction and a method for injecting it. Background technique [0002] Laterally Diffused Metal Oxide Semiconductor (LDMOS) process technology (Laterally Diffused Metal Oxide Semiconductor, LDMOS) is mainly for RF power amplifiers of mobile phone base stations in the early stage. Due to its high sensitivity, high efficiency, high gain, low distortion, low noise, low thermal resistance, LDMOS devices are widely used in CDMA, W-CDMA, TETRA, digital terrestrial television and other fields that require wide frequency range, high linearity and long service life, but LDMOS also has its own limitations, such as low power density, ESD resistance, total dose radiation resistance, and poor single-event radiation resistance. By combining SOI technology and CMOS technology with the traditional LDMOS ma...

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Problems solved by technology

[0002] Laterally Diffused Metal Oxide Semiconductor (LDMOS) process technology (Laterally Diffused Metal Oxide Semiconductor, LDMOS) is mainly for RF power amplifiers of mobile phone base stations in the early stage. Due to its high sensitivity, high efficiency, high gain, low distortion, low noise, low thermal resistance, LDMOS devices are widely used in CDMA, W-CDMA, TETRA, digital terrestrial television and other fields that require wide frequency range, high linearity and long service life, but LDMOS also has its own limitations, such as low power density, anti-ESD, anti-total dose radiation and poor anti-single event radiation ability, etc.

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