Low-jitter charge pump with radiation resistance characteristics

A low-jitter, radiation-resistant technology, applied in the field of radiation resistance, can solve problems affecting the performance of phase-locked loops, etc., and achieve the effects of easy implementation, reduced jitter, and simple structure

Active Publication Date: 2017-06-13
NAT UNIV OF DEFENSE TECH
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The charge pump is an important part of the phase-locked loop. If the jitter of the charge pump is too large due to radiation, it will seriously affect the performance of the phase-locked loop.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Low-jitter charge pump with radiation resistance characteristics
  • Low-jitter charge pump with radiation resistance characteristics
  • Low-jitter charge pump with radiation resistance characteristics

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0013] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0014] Such as figure 1 , figure 2 and image 3 As shown, the low-jitter charge pump with anti-radiation characteristics of the present invention includes a current mirror unit, a differential circuit unit and a push-pull amplifier, the input current I generates bias currents Iss1 and Iss2 through the current mirror unit, and the current mirror The input terminal of the unit is connected with the input of the push-pull amplifier, and negative feedback is formed through the push-pull amplifier, so as to provide a stable bias current for the differential circuit unit. Since the present invention introduces a push-pull amplifier at the input end for feedback, it can effectively suppress the change of the bias current in the differential circuit unit due to the disturbance of the input current, thereby providing a stable current; in ad...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a low-jitter charge pump with radiation resistance characteristics. The low-jitter charge pump comprises a current mirror unit, a differential circuit unit and a push-pull amplifier, wherein input current I passes through the current mirror unit and generates bias current Iss1 and Iss2; meanwhile, an input end of the current mirror unit is connected with the input end of the push-pull amplifier and negative feedback is formed through the push-pull amplifier; and the differential circuit unit is provided with stable bias current. The low-jitter charge pump has the advantages of being simple in structure, low in cost, easy to implement and good in effect.

Description

technical field [0001] The invention mainly relates to the field of anti-radiation technology, in particular to a low-jitter charge pump with anti-radiation characteristics. Background technique [0002] In order to meet the demand for integrated circuits with higher integration, more functions and lower power consumption, the feature size and operating voltage of integrated circuits have been continuously reduced, resulting in a sharp increase in the radiation sensitivity of circuits. The charge pump is an important part of the phase-locked loop. If the jitter of the charge pump is too large due to irradiation, the performance of the phase-locked loop will be seriously affected. Therefore, it is very meaningful to develop a low-jitter charge pump with anti-irradiation effect. Contents of the invention [0003] The technical problem to be solved by the present invention is: aiming at the technical problems existing in the prior art, the present invention provides a low-ji...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H02M3/07
Inventor 郭阳袁珩洲魏红涛谭佳伟陈建军梁斌池雅庆胡春媚陈希李寿萍郭前程
Owner NAT UNIV OF DEFENSE TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products