Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!
Radio frequency laterally diffused metal oxide semiconductor (LDMOS) device based on silicon on insulator (SOI) and method for injecting device
What is Al technical title?
Al technical title is built by PatSnap Al team. It summarizes the technical point description of the patent document.
A device and radio frequency technology, applied in the field of radio frequency power devices, can solve the problems of poor anti-total dose radiation anti-single event radiation, low power density, low intermodulation distortion performance, etc., to achieve wide application range, improve yield, optimize Effect of on-resistance
Active Publication Date: 2012-11-21
BEIJING ZHONGKE XINWEITE SCI & TECH DEV
View PDF0 Cites 0 Cited by
Summary
Abstract
Description
Claims
Application Information
AI Technical Summary
This helps you quickly interpret patents by identifying the three key elements:
Problems solved by technology
Method used
Benefits of technology
Problems solved by technology
[0002] Laterally Diffused Metal Oxide Semiconductor (LDMOS) process technology (Laterally Diffused Metal Oxide Semiconductor, LDMOS) is mainly for RF power amplifiers of mobile phone base stations in the early stage, due to its high sensitivity, high efficiency, high gain, low distortion, low noise, low thermal resistance, stable frequency , low intermodulation distortion performance and strong automatic gain control capabilities, LDMOS devices are widely used in CDMA, W-CDMA, TETRA, digital terrestrial television and other fields that require wide frequency range, high linearity and high service life, but LDMOS It also has its own limitations, such as low power density, anti-ESD, anti-total dose radiation and poor anti-single event radiation ability, etc.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more
Image
Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
Click on the blue label to locate the original text in one second.
Reading with bidirectional positioning of images and text.
Smart Image
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0051] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
[0052] Such as figure 1 as shown, figure 1 It is a schematic structural diagram of a radio frequency SOILDMOS device with a low barrier body extraction provided by the present invention. The LDMOS device uses a silicon-on-insulator SOI with a top layer of silicon 3, a buried oxide layer 2 and a bottom layer of silicon 1 from top to bottom as the basic structure, This RF LDMOS device consists of:
[0053] P placed on the upper surface of the buried oxide layer - District 20, in the immediate vicinity of P - The first N - District 23 and 2nd N - District 24;
[0054] A first gate oxide layer 7 and a second gate oxide layer 8 disposed on the upper surface of the top silicon layer 3;
[0055] The first polysilicon gate...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More
PUM
Login to View More
Abstract
The invention discloses a radio frequency silicon on insulator(SOI) laterally diffused metal oxide semiconductor (LDMOS) device provided with a low potential barrier body lead-out, which comprises a bottom layer silicon, a concealed oxide layer, a top layer silicon, a P-region, a N-region, a gate oxide layer, a polysilicon gate layer, a gate polycrystalline silicon carbide layer, a gate electrode, a side wall, a N-drift region, a drain region, a drain region silicate layer, a leakage electrode, a source region, a low potential barrier body lead-out region, a body region, a source region silicide layer, and a source electrode. In the invention, the radio frequency LDMOS device is manufactured on an SOI substrate, and a low potential barrier body lead-out is in a short circuit with the source region is formed by utilizing a heavily doped region homotypic with the P- region; the source / body, leakage / body as well as a gate is interconnected with each electrode by utilizing a silicide; a plurality of grate bars are in interdigital type parallel connection so as to enlarge the driving power of the device; and the invention provides a method for rectifying, back gate injection, N-regioninjection as well as N-drift region injection compatible with a complementary metal-oxide-semiconductor (CMOS) technology, as well as a N-drift region silicide conceal method compatible with the CMOStechnology.
Description
technical field [0001] The invention relates to the technical field of radio frequency power devices, in particular to a radio frequency SOI LDMOS device with low potential barrier body extraction and a method for injecting it. Background technique [0002] Laterally Diffused Metal Oxide Semiconductor (LDMOS) process technology (Laterally Diffused Metal Oxide Semiconductor, LDMOS) is mainly for RF power amplifiers of mobile phone base stations in the early stage, due to its high sensitivity, high efficiency, high gain, low distortion, low noise, low thermal resistance, stable frequency , low intermodulation distortion performance and strong automatic gain control capabilities, LDMOS devices are widely used in CDMA, W-CDMA, TETRA, digital terrestrial television and other fields that require wide frequency range, high linearity and high service life, but LDMOS It also has its own limitations, such as low power density, anti-ESD, anti-total dose radiation and poor ability to re...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More
Application Information
Patent Timeline
Application Date:The date an application was filed.
Publication Date:The date a patent or application was officially published.
First Publication Date:The earliest publication date of a patent with the same application number.
Issue Date:Publication date of the patent grant document.
PCT Entry Date:The Entry date of PCT National Phase.
Estimated Expiry Date:The statutory expiry date of a patent right according to the Patent Law, and it is the longest term of protection that the patent right can achieve without the termination of the patent right due to other reasons(Term extension factor has been taken into account ).
Invalid Date:Actual expiry date is based on effective date or publication date of legal transaction data of invalid patent.