High reliability soi LDMOS power device
A power device, a reliable technology, applied in the field of highly reliable SOILDMOS power devices, can solve problems such as poor reliability, achieve the effect of raising the maintenance voltage, avoiding damage or burning of LDMOS devices, and expanding the electrical safe working area
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Embodiment 1
[0028] The highly reliable SOILDMOS power device provided by the present invention, such as figure 1 As shown, in the figure, 19 is a buried oxide layer, and the material is silicon dioxide; 18 is a top silicon layer, in which an SOI device is fabricated; 17 is a bottom silicon layer, which is completely isolated from the top silicon layer 18 by the buried oxide layer 19 16 is the SOILDMOS gate, the material is polysilicon implanted with high concentration; 15 is the drift region; 13 is the source implantation region to form the device source, 14 is the drain implantation region to form the device drain; 11 is the buried layer, in this embodiment Its range is a part of the working area of the device, and the depth is close to the buried oxide layer 19 above the buried oxide layer 19; 12 is a high-concentration contact injection region, and its function is to connect the surface of the buried layer 11 and the top silicon layer 18, so that the buried layer 11 The potential of ...
Embodiment 2
[0030] Such as figure 2 As shown, it is a schematic cross-sectional view of a SOILDMOS power device structure in which the buried oxide layer is next to the buried oxide layer and the entire working area is buried in the embodiment of the present invention. In the figure, 29 is a buried oxide layer, and the material is silicon dioxide; 28 is a top silicon layer, in which an SOI device is fabricated; 27 is a bottom silicon layer, which is completely isolated from the top silicon layer 28 by a buried oxide layer 29; 26 is SOILDMOS gate, the material is the polysilicon of high-concentration implantation; 25 is the drift region; 23 is the device source end that the source end implantation region forms, and 24 is the drain end implantation region and forms the device drain end; 21 is the buried layer, and its scope is in this embodiment The entire working area of the device has a depth that is close to the buried oxide layer 29 above the buried oxide layer 29; 22 is a high-conce...
Embodiment 3
[0032] Such as image 3 As shown, it is a schematic cross-sectional view of a SOILDMOS power device structure in which the buried oxide layer and the device surface are partially buried in the working region according to an embodiment of the present invention. 39 is a buried oxide layer, the material is silicon dioxide; 38 is a top silicon layer, in which an SOI device is made; 37 is a bottom silicon layer, which is completely isolated from the top silicon layer 38 by a buried oxide layer 39; 36 is a SOILDMOS gate, The material is high-concentration implanted polysilicon; 35 is the drift region; 33 is the source implantation region to form the device source, 34 is the drain implantation region to form the device drain; 31 is the buried layer, and its scope is the device working area in this embodiment 32 is a high-concentration contact injection region, and its function is to connect the surface of the buried layer 31 and the top silicon layer 38, so that the potential of the ...
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