Local soi LDMOS device for frequency boosting overcoming short channel effect
A short-channel effect and frequency technology, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems that the deterioration of short-channel characteristics cannot be suppressed, and the frequency characteristics cannot be realized, so as to achieve the suppression of short-channel effects and good short-circuit Channel characteristics, effect of guaranteed breakdown voltage
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[0043] This example is aimed at Figure 4 The ET-PSOI LDMOS device shown adopts a local SOI structure BOX layer directly below the channel region. The shape of the BOX layer is rectangular, and the top corner of the BOX layer near the drift region is passivated into a chamfered structure to reduce the electric field at the sharp corner of the BOX layer. Increase breakdown voltage while improving cutoff frequency and drive capability.
[0044] The small-sized LDMOS device with local ultra-thin SOI in this embodiment includes a semiconductor substrate 1, a channel region 2, a drift region 3, a source region 4, a drain region 5, a gate oxide 6, a field oxide 7, a gate 8, a trench The channel substrate heavily doped region 9, the BOX layer 18, the side wall 19, and the source extension region 20, wherein the BOX layer 18 is a rectangle with a thickness of 30nm, located directly below the channel region and having the same length as the channel region, The distance between the upp...
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