SOI LDMOS device capable of improving self-heating effect

Abstract

The invention discloses an SOI LDMOS device for improving a self-heating effect, which relates to the field of SOI devices, and adopts a P-type heavily doped silicon layer and an N-type lightly doped semiconductor layer which are stacked to replace a conventional buried oxide layer, so that the dielectric isolation effect of the buried oxide layer can also be realized; and the thermal conductivity of the silicon layer and the semiconductor layer is much higher than that of the conventional buried oxide layer, so that the self-heating effect can be improved on the basis that the SOI LDMOS device has the advantages of high speed and low power consumption.

Description

technical field [0001] The invention relates to the field of SOI devices, in particular to an SOI LDMOS device with improved self-heating effect. Background technique [0002] Compared with traditional bulk silicon devices, SOI LDMOS (Silicon-on-Insulator Laterally Double-Diffused MOSFET) devices introduce a thick buried oxide layer between the active region and the substrate to achieve dielectric isolation, making SOI LDMOS The device has the advantages of fast speed and low power consumption, and is widely used in various electronic power systems. However, since the thermal conductivity of the buried oxide layer is much lower than that of the silicon substrate, for example, the thermal conductivity of silicon dioxide is 1.4W / m.K, while that of silicon is 140W / m.K, so the buried oxide layer is equivalent to a heat sink. The barrier layer hinders the release of heat from the active region to the substrate, which will also cause serious total dose effects and self-heating ef...

AI Technical Summary

Problems solved by technology

However, since the thermal conductivity of the buried oxide layer is much lower than that of the silicon substrate, for example, the thermal conductivity of silicon dioxide is 1.4W / m.K, while that of silicon is 140W / m.K, so the buried oxide layer is equivalent to a heat sink. The barrier layer hinders the release of heat from the active area to the substrate, which will also cause serious total dose effects and self-heating effects, which will have a series of adverse effects on the device

Images