Technology for obtaining large-area high-quality GaN self-supporting substrate

Abstract

A process for preparing large-area high-quality self-supporting GaN substrate includes such steps as firstly transversely expitaxying on a sapphire substrate to obtain low-dislocation-density GaN film, then gas-phase epitaxying of hybride on ELO GaN film to obtain low-dislocation-density large-area thick GaN film, stripping the thick GaN film without damage by laser scan and radiation, and polishing the surface.

Description

1. Technical field [0001] The invention relates to a method for preparing a large-area self-supporting gallium nitride (GaN) substrate by lateral epitaxy technology, hydride vapor phase epitaxy (HVPE) thick film technology and laser lift-off technology. 2. Technical Background [0002] Group III-V nitride materials (also known as GaN-based materials) based on GaN, InGaN, and AlGaN alloy materials are new semiconductor materials that have received much attention in the world in recent years. They are short-wavelength semiconductor optoelectronic devices and high-frequency, high-voltage , The most preferred material for the preparation of high temperature microelectronic devices. [0003] Due to the limitations of the physical properties of GaN itself, the growth of GaN bulk single crystal is very difficult and has not been put into practical use. Due to the lack of bulk single crystals, GaN thin films are mainly obtained by heteroepitaxy. The most commonly used substrate ma...

AI Technical Summary

Problems solved by technology

The general method is mechanical grinding, but because sapphire is very hard, it not only consumes a lot of diamond abrasives, but also costs a lot and the speed is extremely slow