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69 results about "Thick film technology" patented technology

Thick-film technology is used to produce electronic devices such as surface mount devices, hybrid integrated circuits, heating elements and sensors. Thick-film circuits are widely used in the automotive industry, both in sensors, e.g. mixture of fuel/air, pressure sensors, engine and gearbox controls, sensor for releasing airbags, ignitors to airbags; common is that high reliability is required, often extended temperature range also along massive thermocycling of circuits without failure.

Steel and titanium alloy low-temperature pulse ion nitrocarburizing and cathode arc ion plating M/MN alternate plating thick-film technology

The invention discloses a steel and titanium alloy low-temperature pulse ion nitrocarburizing and cathode arc ion plating M/MN alternate plating thick-film technology, and belongs to the technical field of material surfaces. The technology is characterized in that the stress relief annealing is performed for a workpiece 3 by cold rolling or cold drawing; a nitrocarburizing layer and M/MN alternate composite thick-film layer with a mildly transitional hardness of a wear resistant layer on the surface of the workpiece is prepared to prevent the falling of a coating film; a transition layer with a thickness of 1-3 microns is formed between a modified layer and an ion plating M film layer to improve the adhesiveness of the coating film; ion plating M and MN alternate coating films are prepared; the ion plating M film can partially absorb the internal stress of the MN plating film; and the plating film is not liable to fall. The technology has the effects and benefits of solving low hardness and weak wear resistance of a titanium alloy, replacing electroplating hard chromium, having no environmental pollution, having no harm to human bodies and having wide application range, such as molds, machine tool parts, mine machinery, locomotives and piston rings.
Owner:DALIAN UNIV OF TECH

Device and method for improving screen printing precise alignment by using contact photoetching machine

The invention provides a device and a method for improving screen printing precise alignment by using a contact photoetching machine. The method comprises the following steps: when photoetching, inserting a positioning jig frame provided with a screen printing mask image into the contact photoetching machine, adjusting brightness through an auxiliary spacer, setting compressed air to upwards move a spacer bearing platform, realizing X-Y-Z photoetching pre-positioning through sensor induction, aligning the screen printing image with a silicon wafer image on the spacer bearing platform through a microscopical alignment system, putting printing paint on a silk screen, and printing the image with a scraper blade, and when the spacer bearing platform moves downwards to the original position, taking the silicon wafer out. The device and the method have the following advantages that: the screen printing alignment precision is improved to +/-3 mum of the microelectronic technology from 10 to 15 mum of the common thick film technology; coating and alignment of substrates of a plurality of layers of stacked silicon wafers, which have different thicknesses, are realized; and application range is obviously widened. The device has simple structure, method and operation, is easily integrated and popularized, and realizes the substitution of a contact photoetching mask plate with the screen printing mask image.
Owner:NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD

Temperature measurement feedback electromagnetic induction heating body based on thick film technology

The invention discloses a thick film technology-based temperature measurement feedback electromagnetic induction heating body, which comprises an eddy current heating body base material, wherein the eddy current heating body base material generates heat through changed current in an electromagnetic coil, an insulating coupling material layer is arranged on the surface of the eddy current heating body base material, a thermistor wire layer is arranged on the surface of the insulating coupling material layer, the insulating coupling material layer relatively insulates and isolates the thermistorwire layer from the eddy current heating body base material while a good attachment effect is generated, the thermistor wire layer is located on a loop of a sensor circuit, the resistance value of the thermistor wire layer changes along with the temperature, and the sensor circuit detects the temperature according to the change of the resistance value of the thermistor wire layer. The thermistorwire layer directly detects the temperature of the eddy current heating body base material, so that the temperature can be accurately detected in real time, and the detection is direct compared with the detection of the temperature of a heated object.
Owner:ZHUZHOU LEEDINK ELECTRONICS TECH CO LTD

Hybrid integrated thick film heating device for micro atomic gas chamber, and preparation method thereof

The invention provides a hybrid integrated thick film heating device for a micro atomic gas chamber, and a preparation method thereof. With the thick film technology, heating resistors are printed ona substrate layer by layer and insulated isolation is carried out to form a multi-layer heating structure; a triode, a thermistor and a single-chip microcomputer and other elements are integrated on the substrate and each heating resistor is connected with the triode and is controlled by a DAC output port of the single-chip microcomputer; the single-chip microcomputer collects the voltage of the thermistor and a temperature signal by a ADC module; after processing based on a PID algorithm, the heating power of the heating resistor at each layer is controlled by the DAC to realize multi-gear continuously controlled high-integration heating device. According to the invention, the heating device has advantages of simple circuit structure, high integration degree and integration of controllingand heating; and various problems of the existing micro atomic gas chamber heating device can be solved. The hybrid integrated thick film heating device can be applied to more devices needing heat; moreover, the process is simple and the heating device is easy to prepare.
Owner:ZHONGBEI UNIV

Thick film circuit board and manufacturing method thereof

The invention relates to a thick film circuit board and a manufacturing method thereof. The thick film circuit board comprises a PCB (Printed Circuit Board) substrate, wherein the PCB substrate is provided with a front bonding pad, a via hole, a back bonding pad and a front insulating layer; the lower end of the front bonding pad is positioned in the front insulating layer; the front face of the PCB substrate is also provided with a front conductor circuit layer; the front conductor circuit layer comprises a first branch circuit layer, a second branch circuit layer and a third branch circuit layer and is a conductive layer with thickness of less than 10 mu m; and the middle part of the first branch circuit layer and the middle part of the second branch circuit layer are symmetrically provided with a first resistive layer and a second resistive layer respectively. The manufacturing method comprises the following steps of: forming the front bonding pad, the back bonding pad, the front insulating layer, the via hole, the front resistive layers and a bridging conductor on the PCB substrate through a thick film technology and punching. The front conductor circuit layer has small thickness, low resistive layer fall and a long service life; and by arranging a cut-off point, the resistive layer performance can be improved.
Owner:东莞市东思电子技术有限公司

Miniature gas enricher and preparation method thereof

The invention discloses a miniature gas enricher and a preparation method thereof. The miniature gas enricher comprises a filling layer and a packaging layer covered on the filling layer, wherein a symmetrically distributed miniature spitting channel is processed on the upper surface of the filling layer; absorbing grains are filled in the channel; an air inlet and an air outlet which are communicated with the miniature spitting channel are formed on the packaging layer; a counter bore which is used for fixing a filtering layer is formed at the air outlet; an inlet adapter and an outlet adapter are hermetically arranged corresponding to the air inlet and the air outlet; a SiO2 dielectric layer is arranged on the filling layer; a pair of quick heating elements and a pair of sensitive temperature measurers are respectively arranged on the SiO2 dielectric layer. The enriched gas enters from the inlet adapter, is concentrated and enriched under the physical absorption effect of the absorbing grains and then passes through the filtering layer and is discharged from the outlet adapter. The miniature gas enricher disclosed by the invention can realize miniaturization and has the characteristics of high enriching rate, low power consumption, low cost, easiness in processing, stable materials, easiness in integration, and the like. The thick-film technology of the heating element is simple and the cost is low.
Owner:XI AN JIAOTONG UNIV +1
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