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Hybrid integrated thick film heating device for micro atomic gas chamber, and preparation method thereof

A thick film mixing and heating device technology, applied in the field of micro-electromechanical systems, can solve the problems of large temperature distribution gradient, small power adjustment range, poor control precision, etc., and achieve the effects of convenient production, improved reliability and high precision

Active Publication Date: 2018-12-21
ZHONGBEI UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] In order to solve the deficiencies of the prior art, the present invention provides a thick-film hybrid integrated heating device and a preparation method for micro-atomic gas chambers. The temperature distribution gradient of the chamber heating device is large, the power adjustment range is small, the volume is large, the heating efficiency is low, the noise is large, the connection is messy, and the control accuracy is poor. It can be extended and applied to more devices that need to be heated, and the preparation method is simple. , using thick film technology to mix and integrate amplifying transistors, single-chip microcomputers, thermistors and multiple heating resistors with different resistances into the substrate to make heating devices, which is easy to control production

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  • Hybrid integrated thick film heating device for micro atomic gas chamber, and preparation method thereof
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  • Hybrid integrated thick film heating device for micro atomic gas chamber, and preparation method thereof

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Embodiment Construction

[0036] The present invention will be further described below in conjunction with drawings and embodiments.

[0037]The invention provides a thick-film hybrid integrated heating device for micro-atomic gas chambers, which includes a heating sheet, the heating sheet includes a substrate provided with a light hole and 2 to 10 layers of heating resistors printed on the surface of the substrate, each The upper surface of the layer heating resistor is printed with an insulating medium layer for separating two adjacent layers of heating resistors. One end of each layer of heating resistors is connected to the power supply, and the other end is respectively connected to the collector of a SMD triode. The emitters are respectively grounded through current-limiting resistors, and the bases of each SMD transistor are respectively connected to the digital-to-analog conversion port of the single-chip microcomputer through series resistors, and the analog-to-digital conversion port of the si...

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Abstract

The invention provides a hybrid integrated thick film heating device for a micro atomic gas chamber, and a preparation method thereof. With the thick film technology, heating resistors are printed ona substrate layer by layer and insulated isolation is carried out to form a multi-layer heating structure; a triode, a thermistor and a single-chip microcomputer and other elements are integrated on the substrate and each heating resistor is connected with the triode and is controlled by a DAC output port of the single-chip microcomputer; the single-chip microcomputer collects the voltage of the thermistor and a temperature signal by a ADC module; after processing based on a PID algorithm, the heating power of the heating resistor at each layer is controlled by the DAC to realize multi-gear continuously controlled high-integration heating device. According to the invention, the heating device has advantages of simple circuit structure, high integration degree and integration of controllingand heating; and various problems of the existing micro atomic gas chamber heating device can be solved. The hybrid integrated thick film heating device can be applied to more devices needing heat; moreover, the process is simple and the heating device is easy to prepare.

Description

technical field [0001] The invention relates to a thick-film hybrid integrated heating device and a preparation method for micro-atomic gas chambers, which are suitable for high-integration, high-performance chip-level atomic clocks, micro-miniature atomic spin gyroscopes, SERF (spin-exchangerelaxation-free, Non-spin exchange relaxation) atomic magnetometers and the like belong to the field of microelectromechanical systems. Background technique [0002] Many physical researches and precision measurements are based on the quantum process of the interaction between light and atoms. It is necessary to prepare long-lived atomic polarization states in atomic vapor. Usually, people store atoms in glass closed containers. This container is atomic gas. room. During the experiment, it is necessary to heat up the atomic gas chamber and stabilize it at a certain temperature value to obtain a higher atomic number density, and use gaseous atoms for precise measurement. As the core com...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05B3/20H05B3/10H05B1/02
CPCH05B1/02H05B3/10H05B3/20H05B2203/017
Inventor 张彦军刘召军李云超张亮
Owner ZHONGBEI UNIV
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