Two-dimensional ferroelectric semiconductor channel ferroelectric dielectric layer field effect transistor and preparation method thereof

Abstract

The invention discloses a two-dimensional ferroelectric semiconductor channel ferroelectric dielectric layer field effect transistor and a preparation method thereof. The two-dimensional ferroelectric semiconductor channel ferroelectric dielectric layer field effect transistor comprises an insulating substrate, a graphene grid electrode is arranged on the insulating substrate, and a two-dimensional ferroelectric dielectric layer and a metal grid electrode are arranged on the graphene grid electrode; and the two-dimensional ferroelectric dielectric layer is provided with a two-dimensional ferroelectric semiconductor channel, and the two-dimensional ferroelectric semiconductor channel is provided with a metal source electrode and a metal drain electrode which are separated from each other. The invention also comprises the preparation method of the two-dimensional ferroelectric semiconductor channel ferroelectric dielectric layer field effect transistor. According to the invention, the two ferroelectric bodies are combined with each other, and the bound charges of the two ferroelectric bodies at the interface can perform charge shielding on a depolarization field, so that the residual polarization of the ferroelectric bodies can be prolonged, and the problems that stable nonvolatile storage is difficult to realize and a silicon-based semiconductor process cannot be compatible in the prior art are effectively solved.

Description

Technical field [0001] The present invention belongs to the field of effector technology, and is specifically involved in a two-dimensional ferroelectric semiconductor channel ferroelectric layer effect tube and a preparation method thereof. Background technique [0002] With the further development of artificial intelligence, massive data puts forward new challenges on the current computer storage capacity. In response to how to make fast, efficient, low power, anti-interference data storage, the iron farm effect transistors written by the flip-convertible electropper to realize the data, and the iron electric field effect tube is compared with the current commercial FERAM. Fast, low power, non-destructive reading data advantages. [0003] As the foundation of future nano-electronic devices and large-scale integrated circuits, they own themselves with many excellent physical properties. The two-dimensional material itself is the atomic thickness, and naturally, it has a highly i...

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Problems solved by technology

[0005] In view of the above deficiencies, the present invention provides a two-dimensional ferroelectric semiconductor channel ferroelectric dielectric layer field effect transistor and its preparation method. By combining the two ferroelectrics with each other, the bound charges of the two at the interface will meet The charge shielding by the depolarization field can prolong the remnant polarization of the ferroelectric, effectively solving the problems in the prior art that it is difficult to achieve stable non-volatile storage and incompatibility with silicon-based semiconductor manufacturing processes.

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