Method for making gallium nitride crystal

Abstract

This invention relates to a process method for semiconductor materials of gallium nitride crystals including the following steps: (1) epitaxial growth of Ga nitride or Al nitride on a substrate (2) heat-deposition of crystal particles of silicon, silicon carbide, silicon nitride or silicon oxide (3) continuation of epitaxial growth of Ga nitride further growing undoped and doped Ga nitride film Dor LED, LD, HEMT etc. photoelectronic and electronic apparatus. The said substraet can be sapphire, SiC SiL GaAs, ZnO, MgO, LiAlO2 or Li GaO2 effectively reducing dislocation, overcoming mismatch of the substrate and epitaxial layer.

Description

technical field

[0001] The invention relates to a method for manufacturing semiconductor device materials, more precisely a method for manufacturing gallium nitride crystals. Background technique

[0002] Semiconductor heterojunction is the main structure of semiconductor devices at present, such as LED, LD, HEMT, etc., all adopt heterostructure at present. However, only materials with lattice matching or the same lattice constant can be epitaxially grown to form a heterojunction. The requirement for lattice matching is that the difference in lattice constant is about one ten-thousandth. Devices based on GaAs and InP substrates among III and V group semiconductor materials can obtain very perfect epitaxial layers with lattice matching through epitaxy. However, for gallium nitride, since it is difficult to manufacture large-sized gallium nitride single crystals, Si and sapphire Al are usually used for epitaxy of gallium nitride materials. 2 o 3 and other materials that are...