Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Substrate cleaning method

A technology for substrates and cleaning fluids, applied in cleaning methods and tools, cleaning methods using tools, chemical instruments and methods, etc., can solve problems such as leakage, inability to fit well, insufficient cleaning of the substrate surface, etc., and achieve reduction Effects of reverse contamination, improved cleaning performance, and reduced number of defects

Inactive Publication Date: 2013-12-04
EBARA CORP
View PDF9 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Due to the implementation of CMP, there are residues of the slurry used in CMP (slurry residues) and metal grinding dust on the substrate surface where the metal film, barrier film, and insulating film are exposed, and the cleaning of the substrate surface is insufficient, and residues remain on the substrate surface. , or leakage occurs from the part where residues remain on the surface of the substrate, or because of this, it cannot be bonded well, causing various reliability problems

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Substrate cleaning method
  • Substrate cleaning method
  • Substrate cleaning method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0080] Example 1 shows that one side faces the area W on the left side of the substrate L (refer to figure 2 ) Measurement results of the number of defects of 42 nm or more remaining on the substrate surface when the first flow rate of the cleaning solution is supplied, the substrate surface is cleaned under the first cleaning condition and the second cleaning condition, and then dried. In Example 2, one side faces the left area W of the substrate L (refer to figure 2 ) Measurement results of the number of defects of 42 nm or more remaining on the substrate surface when the substrate surface is cleaned by the first cleaning condition and the second cleaning condition while the second flow rate of the cleaning liquid is supplied to the first flow rate and then dried. In Comparative Example 1, one side faces the right region W of the substrate. R (refer to figure 2 ) Measurement results of the number of defects of 42 nm or more remaining on the substrate surface when the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A substrate cleaning method is used for performing scrub cleaning of a surface of a substrate. The substrate cleaning method includes rotating a roll cleaning member and a substrate respectively in one direction while keeping the roll cleaning member in contact with the substrate in a cleaning area, and supplying a cleaning liquid to a surface of the substrate to scrub-clean the surface of the substrate in the presence of the cleaning liquid in the cleaning area. The cleaning liquid is supplied initially to an inverse-direction cleaning area of the cleaning area where the relative rotational velocity between the roll cleaning member and the substrate is relatively high, and thereafter to a forward-direction cleaning area of the cleaning area where the relative rotational velocity between the roll cleaning member and the substrate is relatively low while the substrate makes one revolution on a central axis thereof.

Description

technical field [0001] The present invention relates to a substrate in which the surface of the substrate is scrubbed by rotating the substrate and the roller-type cleaning member together in one direction while bringing the cylindrical roller-type long cleaning member into contact with the surface of a substrate such as a semiconductor wafer in the presence of a cleaning liquid. the cleaning method. The substrate cleaning method of the present invention is also suitable for cleaning the surface of a semiconductor wafer, cleaning the surface of a substrate when manufacturing LCD (Liquid Crystal Display) devices, PDP (Plasma Display) devices, CMOS image sensors, and the like. Background technique [0002] With the miniaturization of semiconductor devices in recent years, the technique of forming thin films of various materials with different physical properties on substrates and cleaning them has been widely used. For example, in the damascene wiring formation process in whi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B08B1/02B08B11/02H01L21/304
CPCH01L21/02041H01L21/02065H01L21/02074H01L21/02096Y10S134/902B08B1/32H01L21/302H01L21/0265
Inventor 石桥知淳
Owner EBARA CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com