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Heat treatment method after silicon carbide monocrystal growth

A heat treatment method, silicon carbide single crystal technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of limited reduction effect, high requirements for crystal post-processing, high cost, etc., and achieve the reduction of the number of defects and easy Realize and improve the effect of quality

Active Publication Date: 2006-12-27
BEIJING TIANKE HEDA SEMICON CO LTD
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  • Application Information

AI Technical Summary

Problems solved by technology

Both of these two technologies have certain shortcomings: the former has limited effect on reducing the number of micropipes and inclusions in SiC crystals, and has shortcomings in the repeatability and stability of crystal growth; Crystal post-processing has high requirements, high cost, and long cycle, and it is difficult to quickly realize the application of laboratory research results

Method used

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  • Heat treatment method after silicon carbide monocrystal growth
  • Heat treatment method after silicon carbide monocrystal growth
  • Heat treatment method after silicon carbide monocrystal growth

Examples

Experimental program
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Embodiment 1

[0030] Cover a SiC single crystal with a diameter of 2 inches and a thickness of 1mm with a carbon film of 0.1mm thickness, and put it into a graphite crucible with an outer diameter of 80mm, a height of 80mm, an inner diameter of 70mm, and a depth of 75mm. The crucible contains 0.01mm particles with a height of 35mm A mixture of SiC powder and Si powder, the weight ratio of SiC powder and Si powder in the crucible is 10:1, and the SiC wafer coated with carbon film is placed in the powder at a height of 20 mm from the inner wall of the bottom of the crucible. Put the graphite crucible into the heating furnace, and after evacuating the heating furnace, pass Ar gas to make the pressure in the furnace reach 0.5 atm. Raise the temperature so that the temperature of the powder in the crucible reaches 2000°C, keep it warm for 0.5 hours and then cool it with the furnace to obtain a SiC single crystal that eliminates part of the microtubes and inclusions.

[0031] In this example, bef...

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Abstract

The invention discloses a heat disposing method of carborundum monocrystalline, which comprises the following steps: placing SiC monocrystalline with carbon film and powder material in the copple; heating argon to preset temperature; keeping temperature for certain time; cooling argon along with furnace; recrystallizing SiC crystal and solid diffusion to eliminate partial micro-pipe and pack defect. The invention reduces defect quantity of micro-pipe and package in the SiC monocrystalline, which improves SiC monocrystalline quality.

Description

technical field [0001] The invention relates to a single crystal treatment method, in particular to a heat treatment method after silicon carbide (SiC) single crystal growth. Background technique [0002] SiC is a IV-IV binary compound semiconductor material, which has a wide band gap (2.4-3.3eV), high critical breakdown field strength (>2.0×10 5 V·cm -1 ), high thermal conductivity (5-7W·cm -1 ·K -1 ), high carrier saturation drift rate (2.0×10 7 cm·s -1 ) and other characteristics. Compared with the first-generation semiconductor material Si and the second-generation semiconductor material GaAs, the third-generation semiconductor material SiC has great advantages in terms of operating temperature, radiation resistance, and high breakdown voltage resistance. Its excellent performance can meet modern Electronic technology has higher requirements for high temperature, high frequency, high power, high voltage and radiation resistance. It is widely used in military an...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/02C30B29/36
Inventor 朱丽娜陈小龙倪代秦杨慧彭同华
Owner BEIJING TIANKE HEDA SEMICON CO LTD
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