Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Epitaxial structure with interposed layer quantum well semiconductor laser

A technology of epitaxial structure and insertion layer, applied in the field of epitaxial structure, can solve the problem of difficult to obtain interface quality quantum well and quantum barrier layer and so on

Inactive Publication Date: 2014-05-07
TAIYUAN UNIV OF TECH +1
View PDF4 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the memory effect of the In atoms of the compounds InGaAs and GaAsP and the substitution of As / P during the growth process, it is difficult to obtain quantum wells and quantum barrier layers with better interface quality.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Epitaxial structure with interposed layer quantum well semiconductor laser
  • Epitaxial structure with interposed layer quantum well semiconductor laser

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0010] Reference attached figure 1 , The invention relates to an epitaxial structure of a semiconductor laser with an insertion layer quantum well, and the invention discloses a preparation method of a semiconductor laser with a special structure. The structure includes from bottom to top: GaAs substrate; GaAs buffer layer; AIGaAs lower confinement layer; AIGaAs lower waveguide layer; active layer is InGaAs / GaAsP (the insertion layer in the active layer is GaAs or InP); Waveguide layer; AIGaAs upper confinement layer; GaAs cladding layer. In this structure, a thin layer of GaAs or InP is inserted between the quantum well of the active layer and the barrier, which can effectively alleviate the lattice adaptation between the quantum well and the barrier, improve the interface quality, reduce the stress, and obtain a higher The low threshold current density improves the optoelectronic performance of semiconductor laser devices.

Embodiment 2

[0012] Reference attached figure 2 , The invention relates to an epitaxial structure of a semiconductor laser with an insertion layer quantum well, and the invention discloses a preparation method of a semiconductor laser with a special structure. The structure includes from bottom to top: GaAs substrate; GaAs buffer layer; AIGaAs lower confinement layer; AIGaAs lower waveguide layer; layer); AIGaAs upper waveguide layer; AIGaAs upper confinement layer; GaAs cladding layer. The content of In in the InGaAs insertion layer with relatively low content of In is between 0.02 and 0.1 (mole mass fraction). The period number of the active layer is 5-10, and the In content is between 0.16-0.2 (mole mass fraction). In this structure, a thin layer of InGaAs is inserted between the quantum wells and the barriers of the active layer, which can effectively reduce the lattice mismatch between the quantum wells and the barriers, smooth the interface components, and eliminate stress, thereb...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to an epitaxial structure with an interposed layer quantum well semiconductor laser. The invention discloses a preparation method of a semiconductor laser with a special structure. The structure comprises from the top to the bottom a GaAs substrate, a GaAs buffer layer, an AIGaAs lower restriction layer, an AIGaAS lower waveguide layer, an active layer, an AIGaAs upper waveguide layer, an AIGaAs upper restriction layer and a GaAs cover layer. In the structure, a thin InGaAs layer whose GaAs or InP or In component content is quite low (compared to the In component in a quantum well) is inserted between the quantum well and the barrier of the active layer, so that the quality adaption between the quantum well and the barrier can be effectively relieved, the interface quality is improved, the stress is lowered, a quite low threshold current density is obtained, and the photoelectric performance of the semiconductor laser device is improved.

Description

technical field [0001] The invention relates to an epitaxial structure of a quantum well semiconductor laser with an insertion layer. Background technique [0002] Semiconductor lasers have the advantages of small size, light weight, high power, high conversion efficiency, and high reliability. They are widely used in optical fiber communication industry material processing, laser medical treatment, national defense construction and other fields. Due to the memory effect of In atoms in compounds InGaAs and GaAsP and the replacement effect of As / P during the growth process, it is difficult to obtain quantum wells and quantum barrier layers with better interface quality. [0003] In order to grow a high-quality semiconductor laser structure, this patent inserts a thin intercalation layer between the quantum well and the quantum barrier, so that the quantum well has better surface flatness, lower surface dislocation density, and enhanced Quantum well luminescence properties. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/343
Inventor 马淑芳许并社李学敏韩蕊蕊田海军吴小强
Owner TAIYUAN UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com