Epitaxial structure with interposed layer quantum well semiconductor laser

A technology of epitaxial structure and insertion layer, applied in the field of epitaxial structure, can solve the problem of difficult to obtain interface quality quantum well and quantum barrier layer and so on
CN103779786AInactive Publication Date: 2014-05-07TAIYUAN UNIV OF TECH +1
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
TAIYUAN UNIV OF TECH
Publication Date
2014-05-07
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention relates to an epitaxial structure with an interposed layer quantum well semiconductor laser. The invention discloses a preparation method of a semiconductor laser with a special structure. The structure comprises from the top to the bottom a GaAs substrate, a GaAs buffer layer, an AIGaAs lower restriction layer, an AIGaAS lower waveguide layer, an active layer, an AIGaAs upper waveguide layer, an AIGaAs upper restriction layer and a GaAs cover layer. In the structure, a thin InGaAs layer whose GaAs or InP or In component content is quite low (compared to the In component in a quantum well) is inserted between the quantum well and the barrier of the active layer, so that the quality adaption between the quantum well and the barrier can be effectively relieved, the interface quality is improved, the stress is lowered, a quite low threshold current density is obtained, and the photoelectric performance of the semiconductor laser device is improved.
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Description

technical field

[0001] The invention relates to an epitaxial structure of a quantum well semiconductor laser with an insertion layer. Background technique

[0002] Semiconductor lasers have the advantages of small size, light weight, high power, high conversion efficiency, and high reliability. They are widely used in optical fiber communication industry material processing, laser medical treatment, national defense construction and other fields. Due to the memory effect of In atoms in compounds InGaAs and GaAsP and the replacement effect of As / P during the growth process, it is difficult to obtain quantum wells and quantum barrier layers with better interface quality.

[0003] In order to grow a high-quality semiconductor laser structure, this patent inserts a thin intercalation layer between the quantum well and the quantum barrier, so that the quantum well has better surface flatness, lower surface dislocation density, and enhanced Quantum well luminescence properties. ...

Claims

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