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A gallium nitride-based semiconductor laser having a graded optical field waveguide layer

PendingCN122292047AImprove mode stabilityreduce penetrationScattering lossDivergence angle
This invention proposes a gallium nitride-based semiconductor laser with a gradient optical field waveguide layer. The fitting curves of the In ion intensity distribution or In atom concentration distribution, refractive index distribution, and optical absorption coefficient distribution obtained from SIMS testing of both the upper and lower waveguide layers satisfy any one of the ExpGro1, ExpGro2, ExpGro3, and Shah functions. This allows for the synergistic control of optical field confinement, loss suppression, and carrier distribution, thereby regulating the laser's optical field distribution. The fabricated gradient refractive index waveguide layer, satisfying the relevant function distribution, confines photons generated by the active layer within the waveguide, smoothing the optical field within the waveguide layer. This eliminates reflection and scattering losses caused by abrupt refractive index differences at the interface, reduces light field penetration into the confinement layer, lowers optical leakage and threshold losses, suppresses the excitation of higher-order transverse modes, achieves stable fundamental mode output, improves the laser's mode stability and beam quality factor, and reduces the horizontal divergence angle.
Owner:GEN SEMICONDUCTOR (ANHUI) CO LTD