33results about How to "Lower threshold current density" patented technology

The invention discloses a sub-wavelength self-focusing radial polarization vertical-cavity surface-emitting laser which comprises a vertical-cavity surface-emitting laser, an N electrode, a dielectric film and an annular grating, wherein a P electrode is arranged on one surface of the vertical-cavity surface-emitting laser; the middle of the annular part of the P electrode is a light emitting surface; the N electrode is arranged on the other surface of the vertical-cavity surface-emitting laser; the dielectric film is arranged on the light emitting surface of the P electrode; and the annular grating is arranged on the dielectric film. According to the invention, the radial polarization output is obtained according to the polarization selection characteristic of the sub-wavelength annular metal grating, and the self-focusing sub-wavelength light spot is obtained through the coherence of each annular groove.

This invention relates to semiconductor laser technique field and provides one InGaAs / GaAs SK growth high intensity quantum point extension layer structure to realize this extension molecule beam semiconductor quantum laser materials method. Through accurate control molecule beam extension growing condition and using submolecule single layer to control quantum points component, extensive thickness, shape structure to realize room temperature PL spectrum of 1.02-1.08 micrometer band.

This invention relates to a method for generating In Ga As P multiquantum-well in mixed organic GA source selection zone in whith, when selecting to generate In GaAsP multiquantum-well, triethyl Ga and trimethyl In generation limitation layer and base and their generation well are applied; the quantum-well material applying this method has large strain for the well zone in selection generation zone, yet small strain in nonselection generation zone; the strain variation is small of the base and limitation layer in the two generation zones which makes the selected generation zone quantum-well have higher luminous effect, guaranteeing realization of high performance electric absorbing modulating DFB laser.

The invention relates to an epitaxial growth method and an epitaxial layer with a heterostructure buried. The epitaxial growth method includes following steps: S1, growing part of or all of an n / p / n / p InP or InGaAsP layer; S2, etching a shape model needing epitaxial growth through burying, a dry method or a wet method; S3, growing all material containing Al in an epitaxial structure in the shape model. Part of or all of an n / p / n / p structure is formed, the shape of the epitaxial layer needing growth is etched, and the epitaxial layer is grown in the shape. By utilizing the method, the advantages of AlGaInAs / InP materials and BH technology can be combined effectively to grow an efficient laser device epitaxial structure, effects of avoiding Al oxidation, lowering auger recombination and interband adsorption and improving high-temperature characteristics of devices are realized, threshold current density of a laser device is reduced, and feature temperature of an active layer material and external quantum efficiency, internal quantum efficiency and conversion efficiency of an active area quantum well are increased.

This invention relates to semiconductor laser technique field and provides one InGaAs / GaAs SK growth high intensity quantum point extension layer structure to realize this extension molecule beam semiconductor quantum laser materials method. Through accurate control molecule beam extension growing condition and using submolecule single layer to control quantum points component, extensive thickness, shape structure to realize room temperature PL spectrum of 1.02-1.08 micrometer band.

A diode in which the threshold current density for laser oscillation is reduced is provided as a Fabry-Perot semiconductor laser diode obtained through a step of forming a resonator end face using an etching technology. A method for manufacturing a semiconductor laser diode includes a step of forming a plurality of semiconductor laser diodes on a substrate, and then dividing the substrate into each semiconductor laser diode. The method includes a step of forming a laminate on the substrate; a step of etching the laminate to separate the laminate into a portion serving as a resonance region and the other portion; an electrode layer forming step of forming a layer forming the second electrode on the second semiconductor layer of the laminate between positions where a resonator end face is formed in the resonance region and divided; after the electrode layer forming step, an etching step of simultaneously or sequentially performing the removal of a portion formed at a position on the outer side relative to the resonator end face of the layer serving as the second electrode and the formation the resonator end face.

The method for growing indium gallium arsenide phosphorus multiple quantum wells in selected regions by mixing organic gallium sources in the present invention is to use triethylgallium and trimethylindium to grow confinement layers and barriers when selectively growing indium gallium arsenide phosphorus multiple quantum wells, and three Methylgallium and trimethylindium growth wells; the quantum well material grown by this method has a large strain in the selective growth region, while in the non-selective growth region, the well region has a small strain; the barrier and the confinement layer are in The strain change of the two growth regions is very small, which makes the quantum well with the selective growth region have high luminous efficiency, and ensures the realization of high-performance electroabsorption modulation DFB laser.

The invention relates to the technical field of semiconductor lasers, provides an InGaAs / GaAs quantum dot epitaxial structure with 1.02 to 1.08 micron wave band, and an epitaxial growing method for a molecular beam high-power semiconductor quantum dot laser material for realizing the epitaxial structure. The a PL spectrum with 1.02 to 1.08 micron wave band at room temperature can illuminate by precisely controlling the molecular beam epitaxial growing condition, namely using the alternative growth of a monoatomic layer to control components, epitaxial layer thickness, appearance structure and the like of the quantum dot and has high luminous efficiency. The method is applied to a pumping source of an optical fiber laser, greatly reduces the device volume and the manufacturing cost and keeps good performance index of the quantum dot laser, such as reducing the threshold current of the laser, reducing the power consumption, improving the temperature stability and the like.

The invention relates to the technical field of semiconductor lasers, provides an InGaAs / GaAs quantum dot epitaxial structure with 1.02 to 1.08 micron wave band, and an epitaxial growing method for a molecular beam high-power semiconductor quantum dot laser material for realizing the epitaxial structure. The a PL spectrum with 1.02 to 1.08 micron wave band at room temperature can illuminate by precisely controlling the molecular beam epitaxial growing condition, namely using the alternative growth of a monoatomic layer to control components, epitaxial layer thickness, appearance structure andthe like of the quantum dot and has high luminous efficiency. The method is applied to a pumping source of an optical fiber laser, greatly reduces the device volume and the manufacturing cost and keeps good performance index of the quantum dot laser, such as reducing the threshold current of the laser, reducing the power consumption, improving the temperature stability and the like.

A short wavelength AlGaInP red light semiconductor laser structurally comprises a substrate, a lower buffer layer, a lower limiting layer, a lower waveguide layer, a quantum well layer, an upper waveguide layer, an upper limiting layer, an upper buffer layer and an ohmic contact layer in sequence from the bottom to the top; the lower buffer layer is an AlxIn1-xP component gradual change layer, and x linearly gradually changes to 0.6 from 0.5; the upper buffer layer is an AlyIn1-yP component gradual change layer, and y linearly gradually changes to 0.5 from 0.6; the upper waveguide layer and lower waveguide layer are both (AlzGa1-z)0.6In0.4P; the lower limiting layer and upper limiting layer are both Al0.6In0.4P. By the AlInP component gradual change buffer layer, an In component of the limiting layers and the waveguide layers is reduced to 0.4, the refraction index of a material of the limiting layers is reduced, a bandgap of a material of the waveguide layers is increased, photons and carriers are better limited, and meanwhile, the quantum well layer can obtain short wavelength light of 590-620nm under a lower strain condition.

The invention discloses a method for preparing a GaN basal keel type laser diode. The method comprises the following steps: firstly, using a P-area contact metal electrode as a light blocking layer on the top of a keel before the keel is subjected to dry etching, subsequently coating a negative photosensitivity thermocuring coating adhesive by using a spinning coating technique; secondly, performing secondary photoetching by using a back exposure technique, wherein the light blocking layer can effectively prevent the photoresist on the top of the keel from being exposed by ultraviolet light, so that photoetched patterns are achieved; finally, obtaining an insulating layer with complete and regular structure through a high-temperature curing method according to the properties of the negative photosensitivity thermocuring coating adhesive. The method has the characteristics that the problems that the conventional keel laser electrode windows are difficult to align and the insulating layer windowing condition is difficult to control are solved.

This invention relates to a waveguide and a grating structure of an adjustable distribution feed back quanta cascade laser obtaining low threshold value current density and high side mode suppression ratio and a method for preparing first order grating of laser meeting the requirement, in which, the laser waveguide and the grating structure is a limit structure in the waveguide made up of a deep first order grating and a thin heavy doped semiconductor layer, said grating corrosion technology is to utilize the InGaAs / InP structure as the corrosion sacrificial layer of the grating and select different corroding liquid matches to get a grating structure with the depth adjustable and accuracy controllable.

The invention relates to an epitaxial growth method and an epitaxial layer for burying a heterostructure, comprising the following steps: S1, growing part or all of an n / p / n / p InP or InGaAsP layer; S2, by burying, dry method or wet method Etch the shape model of the epitaxial growth required; S3, grow all Al-containing materials in the epitaxial structure in the shape model. In the present invention, part or all of the n / p / n / p structure is formed first, and then the shape of the epitaxial layer to be grown is etched, and then the epitaxial layer is grown therein. The method of the invention can effectively combine the advantages of AlGaInAs / InP material and BH technology to grow a high-efficiency laser epitaxial structure, so as to avoid Al oxidation, reduce Auger recombination, inter-band absorption, and improve the high temperature characteristics of the device. The threshold current density of the laser is reduced, the characteristic temperature of the active layer material and the external quantum efficiency, internal quantum efficiency and conversion efficiency of the quantum well in the active region are improved.

The application discloses an antimonide quantum dot interband cascade laser. The laser is prepared by sequentially preparing a lower confinement layer, a lower waveguide layer, a cascade region, an upper waveguide layer, an upper confinement layer and an InAs contact layer on a GaSb substrate. The laser disclosed in this application uses the quantum dot active region as the active region of the interband cascade laser, and utilizes the characteristics of the quantum dot material to effectively confine and utilize the carriers, so that the interband cascade laser has more The low threshold current density and wide gain spectrum characteristics can effectively improve the performance of interband cascaded lasers.

The invention discloses a single-mode silicon-based hybrid laser light source output by a silicon waveguide. The laser light source includes a stacked tapered (Taper) gain structure and an SOI ridge waveguide structure, wherein the tapered gain structure is passed through reflow soldering technology. flip-chip bonding on the SOI ridge waveguide structure. The invention improves the confinement factor of the active region by introducing the III-V family Taper structure and growing the optical lower confinement layer in the periodic microgroove hybrid laser, thereby increasing the mode gain in the III-V family; at the same time, the introduction of the Taper structure The efficient coupling between the III‑V group structure and the silicon waveguide is guaranteed, and the single longitudinal mode laser is output from the silicon waveguide. The invention has low manufacturing cost, can be used for silicon-based optical interconnection, and laser light source in optical communication, improves the coupling efficiency of III-V light source and silicon waveguide, and realizes an efficient coupling single-mode hybrid silicon-based semiconductor laser light source.

The invention discloses a modulation-doped multi-period strain-compensated quantum well epitaxial layer and a growth method thereof. Air pressure in a metal organic chemical vapor deposition reaction chamber is set as predetermined air pressure and reaction gas and an MO source are piped into the metal organic chemical vapor deposition reaction chamber, and the reaction gas and the MO source react under predetermined temperature so as to generate the modulation-doped multi-period strain-compensated quantum well epitaxial layer, wherein the reaction gas is phosphorane and arsine; and the MO source is trimethylaluminum, trimethylindium, trimethylgallium, triethylgallium, P-type doped source dimethylzinc or P-type doped source diethylzinc. The modulation-doped multi-period strain-compensated quantum well epitaxial layer generated by the method is a high-linearity AlGaInAs quantum well epitaxial layer, and compressive strain is increased so that auger recombination and interband absorption can be reduced, and the effect of improving the high temperature characteristic of the device and the external quantum efficiency, the internal quantum efficiency and the conversion efficiency of an active area quantum well and enhancing relaxation oscillation frequency can be achieved.

The invention discloses a Ge / GeSn heterojunction laser and a preparation method thereof. The method includes: growing a first Bragg reflective mirror layer on the surface of a substrate; growing a first n-type Ge layer on the surface of the first Bragg mirror layer; growing a second n-type Ge layer on the surface of the first n-type Ge layer; growing a GeSn layer on the surface of the second n-type Ge layer; growing a first p-type Ge layer on the surface of the GeSn layer; growing a second p-type Ge layer on the surface of the first p-type Ge layer; growing a second Bragg mirror layer on the surface of the second p-type Ge layer; etching a first cylinder and a second cylinder on the obtained structure; forming an electrode at the first step and the second step; finally forming a Ge / GeSn heterojunction lase is finally formed. The invention adopts GeSn material instead of traditional single Ge material to improve luminescence efficiency; By using P-I-N structure reduces the threshold current density. In addition, the preparation method of the invention is simple in process.

The invention discloses a SiGe / Ge / SiGe double heterojunction laser and a preparation method thereof. The method comprises the steps that a p-type Si1-xGex layer is formed on the surface of a Si substrate; a SiN layer is formed on the surface of the p-type Si1-xGex layer; the middle area of the SiN layer is removed through etching to enable the two ends of the SiN layer and the bottom p-type Si1-xGex layer to form a groove; an n-type Ge layer is formed in the groove, wherein the thickness of the n-type Ge layer and the thickness of the SiN layer are the same; an n-type Si1-xGex layer is formedon the surface of the SiN layer and the surface of the n-type Ge layer; a Si cap layer is formed on the surface of the n-type Si1-xGex layer; and an electrode is formed on the Si cap layer. The SiGe / Ge / SiGe double heterojunction laser has the high photoelectric conversion efficiency and the low threshold current density and is good in photostability; and the preparation method of the SiGe / Ge / SiGedouble heterojunction laser can be compatible with a CMOS process, processing is easy and convenient, and a specific structure and implementation scheme is provided for achieving an on-chip light source.