33results about How to "Lower threshold current density" patented technology

This invention relates to semiconductor laser technique field and provides one InGaAs / GaAs SK growth high intensity quantum point extension layer structure to realize this extension molecule beam semiconductor quantum laser materials method. Through accurate control molecule beam extension growing condition and using submolecule single layer to control quantum points component, extensive thickness, shape structure to realize room temperature PL spectrum of 1.02-1.08 micrometer band.

The method for growing indium gallium arsenide phosphorus multiple quantum wells in selected regions by mixing organic gallium sources in the present invention is to use triethylgallium and trimethylindium to grow confinement layers and barriers when selectively growing indium gallium arsenide phosphorus multiple quantum wells, and three Methylgallium and trimethylindium growth wells; the quantum well material grown by this method has a large strain in the selective growth region, while in the non-selective growth region, the well region has a small strain; the barrier and the confinement layer are in The strain change of the two growth regions is very small, which makes the quantum well with the selective growth region have high luminous efficiency, and ensures the realization of high-performance electroabsorption modulation DFB laser.

The invention relates to the technical field of semiconductor lasers, provides an InGaAs / GaAs quantum dot epitaxial structure with 1.02 to 1.08 micron wave band, and an epitaxial growing method for a molecular beam high-power semiconductor quantum dot laser material for realizing the epitaxial structure. The a PL spectrum with 1.02 to 1.08 micron wave band at room temperature can illuminate by precisely controlling the molecular beam epitaxial growing condition, namely using the alternative growth of a monoatomic layer to control components, epitaxial layer thickness, appearance structure andthe like of the quantum dot and has high luminous efficiency. The method is applied to a pumping source of an optical fiber laser, greatly reduces the device volume and the manufacturing cost and keeps good performance index of the quantum dot laser, such as reducing the threshold current of the laser, reducing the power consumption, improving the temperature stability and the like.

A short wavelength AlGaInP red light semiconductor laser structurally comprises a substrate, a lower buffer layer, a lower limiting layer, a lower waveguide layer, a quantum well layer, an upper waveguide layer, an upper limiting layer, an upper buffer layer and an ohmic contact layer in sequence from the bottom to the top; the lower buffer layer is an AlxIn1-xP component gradual change layer, and x linearly gradually changes to 0.6 from 0.5; the upper buffer layer is an AlyIn1-yP component gradual change layer, and y linearly gradually changes to 0.5 from 0.6; the upper waveguide layer and lower waveguide layer are both (AlzGa1-z)0.6In0.4P; the lower limiting layer and upper limiting layer are both Al0.6In0.4P. By the AlInP component gradual change buffer layer, an In component of the limiting layers and the waveguide layers is reduced to 0.4, the refraction index of a material of the limiting layers is reduced, a bandgap of a material of the waveguide layers is increased, photons and carriers are better limited, and meanwhile, the quantum well layer can obtain short wavelength light of 590-620nm under a lower strain condition.

The invention discloses a single-mode silicon-based hybrid laser light source output by a silicon waveguide. The laser light source includes a stacked tapered (Taper) gain structure and an SOI ridge waveguide structure, wherein the tapered gain structure is passed through reflow soldering technology. flip-chip bonding on the SOI ridge waveguide structure. The invention improves the confinement factor of the active region by introducing the III-V family Taper structure and growing the optical lower confinement layer in the periodic microgroove hybrid laser, thereby increasing the mode gain in the III-V family; at the same time, the introduction of the Taper structure The efficient coupling between the III‑V group structure and the silicon waveguide is guaranteed, and the single longitudinal mode laser is output from the silicon waveguide. The invention has low manufacturing cost, can be used for silicon-based optical interconnection, and laser light source in optical communication, improves the coupling efficiency of III-V light source and silicon waveguide, and realizes an efficient coupling single-mode hybrid silicon-based semiconductor laser light source.

The invention discloses a modulation-doped multi-period strain-compensated quantum well epitaxial layer and a growth method thereof. Air pressure in a metal organic chemical vapor deposition reaction chamber is set as predetermined air pressure and reaction gas and an MO source are piped into the metal organic chemical vapor deposition reaction chamber, and the reaction gas and the MO source react under predetermined temperature so as to generate the modulation-doped multi-period strain-compensated quantum well epitaxial layer, wherein the reaction gas is phosphorane and arsine; and the MO source is trimethylaluminum, trimethylindium, trimethylgallium, triethylgallium, P-type doped source dimethylzinc or P-type doped source diethylzinc. The modulation-doped multi-period strain-compensated quantum well epitaxial layer generated by the method is a high-linearity AlGaInAs quantum well epitaxial layer, and compressive strain is increased so that auger recombination and interband absorption can be reduced, and the effect of improving the high temperature characteristic of the device and the external quantum efficiency, the internal quantum efficiency and the conversion efficiency of an active area quantum well and enhancing relaxation oscillation frequency can be achieved.

The invention discloses a SiGe / Ge / SiGe double heterojunction laser and a preparation method thereof. The method comprises the steps that a p-type Si1-xGex layer is formed on the surface of a Si substrate; a SiN layer is formed on the surface of the p-type Si1-xGex layer; the middle area of the SiN layer is removed through etching to enable the two ends of the SiN layer and the bottom p-type Si1-xGex layer to form a groove; an n-type Ge layer is formed in the groove, wherein the thickness of the n-type Ge layer and the thickness of the SiN layer are the same; an n-type Si1-xGex layer is formedon the surface of the SiN layer and the surface of the n-type Ge layer; a Si cap layer is formed on the surface of the n-type Si1-xGex layer; and an electrode is formed on the Si cap layer. The SiGe / Ge / SiGe double heterojunction laser has the high photoelectric conversion efficiency and the low threshold current density and is good in photostability; and the preparation method of the SiGe / Ge / SiGedouble heterojunction laser can be compatible with a CMOS process, processing is easy and convenient, and a specific structure and implementation scheme is provided for achieving an on-chip light source.