This invention proposes a
gallium nitride-based
semiconductor laser with a gradient
optical field waveguide layer. The fitting curves of the In
ion intensity distribution or In atom concentration distribution,
refractive index distribution, and
optical absorption coefficient distribution obtained from SIMS testing of both the upper and lower
waveguide layers satisfy any one of the ExpGro1, ExpGro2, ExpGro3, and Shah functions. This allows for the synergistic control of
optical field confinement, loss suppression, and carrier distribution, thereby regulating the
laser's
optical field distribution. The fabricated gradient
refractive index waveguide layer, satisfying the relevant function distribution, confines photons generated by the
active layer within the waveguide,
smoothing the optical field within the waveguide layer. This eliminates reflection and scattering losses caused by abrupt
refractive index differences at the interface, reduces
light field penetration into the confinement layer, lowers optical leakage and threshold losses, suppresses the excitation of higher-order transverse
modes, achieves stable fundamental mode output, improves the
laser's mode stability and beam quality factor, and reduces the horizontal
divergence angle.