145results about How to "Reduce photolithography process" patented technology

It is an object to provide a display having high visibility and a transflective type liquid crystal display device having a reflection electrode having a concavo-convex structure formed without especially increasing the process. During manufacturing a transflective liquid crystal display device, a reflection electrode of a plurality of irregularly arranged island-like patterns and a transparent electrode of a transparent conductive film are layered in forming an electrode having transparent and reflection electrodes thereby having a concavo-convex form to enhance the scattering ability of light and hence the visibility of display. Furthermore, because the plurality of irregularly arranged island-like patterns can be formed simultaneous with an interconnection, a concavo-convex structure can be formed during the manufacturing process without especially increasing the patterning process only for forming a concavo-convex structure. It is accordingly possible to greatly reduce cost and improve productivity.

A first insulator (710) having an opening within a central region (551) is formed on a main surface (61S) of an epitaxial layer (610). Then, p-type impurities are ion implanted through the opening of the first insulator (710) and then heat treatment is carried out, thereby to form a p base layer (621) in the main surface (61S). An insulating film is formed to fill in the opening and then etched back, thereby to form a second insulator (720) on a side surface (71W) of the first insulator (710). Under conditions where the second insulator (720) is present, n-type impurities are ion implanted through the opening and then heat treatment is carried out, thereby to form an n⁺ source layer (630) in the main surface (61S) of the p base layer (621).

A TFT array substrate includes a thin film transistor section in which a gate electrode is formed on a substrate, and a semiconductor layer is formed on the gate electrode via a gate insulation layer. The semiconductor layer of this TFT array substrate has a shape formed by dropping a droplet. Accordingly, it is possible to directly forming a semiconductor layer, or a resist layer for forming the semiconductor layer, by dropping a droplet(s). On this account, the present invention allows the use of an inkjet method, thus reducing costs and numbers of manufacturing processes.

The invention discloses a wafer level vacuum packaging method of an MEMS (Micro-electromechanical System) component, which realizes the packaging of a packaging cover plate and the MEMS component by adopting an eutectic bonding technology. The method comprises the steps of: (1) carrying out double-side polishing on the packaging cover plate; (2) depositing insulating media on two sides of the packaging cover plate; (3) preparing a metal film which is used for metal-silicon bonding on the packaging cover plate; (4) preparing an electrode outlet through hole; and (5) carrying out bonding packaging on the packaging cover plate and the MEMS component. By preparing the metal film which is used for metal-silicon bonding on the packaging cover plate, the invention omits the process for preparing bonding metal layer during processing the MEMS component, reduces the pollution of metal to MEMS components in production process, improves the process compatibility and further improves the performance of the MEMS components.

A thin-film transistor including a gate electrode, a drain electrode, and a source electrode is formed. A first insulating film is formed so as to cover the thin-film transistor. A second insulating film is formed on the first insulating film. A transparent conductive film is formed on the second insulating film. An etching resist which is patterned by a photolithography process is formed on the transparent conductive film. A first transparent electrode is formed by patterning the transparent conductive film by a first etching using the etching resist. A penetration hole is formed in the second insulating film at a position above one of the drain electrode and the source electrode by a second etching which is performed using the etching resist on a surface of the second insulating film exposed from the first transparent electrode.

The invention relates to an array substrate and a manufacturing method therefor and a display apparatus, and aims to solve the problem of a relatively complex manufacturing process of a TFT substrate, so that an effective mode for reducing photolithography techniques without lowering product yield is needed urgently. The manufacturing method comprises the steps of forming a gate metal layer pattern, a gate insulating layer thin film, an active layer pattern and source and drain metal layer patterns on a substrate; forming a planarization layer thin film, a first electrode layer pattern, a first insulating layer thin film and a photoresist pattern on the source and drain metal layer patterns in sequence; performing a dry etching process on the first insulating layer thin film and the planarization layer thin film in sequence, wherein via holes formed in the first insulating layer thin film, a first shielding electrode and the planarization layer thin film form a first through hole; and forming a second electrode layer pattern which comprises a first bridging electrode on the first insulating layer thin film, and enabling the first bridging electrode to at least fully cover the first through hole region and to be connected with the source and drain metal layer patterns.

The invention relates to an OLED display device integrated with a solar cell and a manufacturing method thereof, and an OLED watch. The OLED display device integrated with a solar cell comprises an OLED area and a solar cell area. In the manufacturing method of the OLED display device integrated with a solar cell, a TFT first conductivity type semiconductor in the OLED area and a solar cell first conductivity type semiconductor in the solar cell area are formed by performing a photolithography and etching process on a first conductivity type semiconductor material layer, and an OLED cathode in the OLED area and a solar cell second polarity electrode in the solar cell area are formed by performing a photolithography and etching process on a metal layer. Thus, the number of times that the photolithography and etching process is performed is reduced by one and the number of masks needed is reduced by one in each step, and the process time and cost are saved.

The invention discloses a fast recovery diode and a manufacturing method of the fast recovery diode. The diode disclosed by the invention comprises an anodic diffusion P-type doped region, an evenly-doped intrinsic region, a cathodic diffusion N-type region, anode and cathode metal layers, wherein the anodic diffusion P-type doped region is a P-type doped region provided with alternated high and low concentrations and formed by locally pouring through a mask plate. Compared with the prior art, the diode disclosed by the invention has the characteristics of low inverse peak current IRRM, short reverse recovery time trr and high reverse recovery softness.

The invention provides a liquid crystal display panel and a liquid crystal display device, comprising a first substrate, a second substrate and a liquid crystal layer, wherein the first substrate and the second substrate are arranged opposite to each other, and the liquid crystal layer is clamped between two substrates, the first substrate comprises a plurality of pixel regions defined by a plurality of scanning lines and a plurality of data lines, and the pixel regions at least comprise a first sub-pixel electrode and a second sub-pixel electrode, a first film transistor and a second film transistor. The first sub-pixel electrode and the second sub-pixel electrode are electrically isolated from each other and the polarities of the first sub-pixel electrode and the second sub-pixel electrode are opposite when the liquid crystal display panel operates; the first sub-pixel electrode and the second sub-pixel electrode are nested with each other, wherein the first sub-pixel electrode is provided with at least one nesting region extending into the second sub-pixel electrode, and the second sub-pixel electrode is provided with at least one nesting region extending into the first sub-pixel electrode. The liquid crystal display panel saves photoetching process of a projection structure and a gap in the process of manufacturing a color filter substrate, simplifies the process, reduces the cost and improves the contrast ratio at the same time.

The invention discloses a micro-hemispherical resonator gyroscope based on borosilicate glass annealing forming and a preparing method of the micro-hemispherical resonator gyroscope. A silicon wafer is used as a substrate to form a silicon substrate, a cylindrical cavity and a center supporting pillar in the circle center of the cavity are etched on the upper surface of the silicon wafer, and the center supporting pillar is connected with the center of a hemispherical resonator to form a suspension structure. Meanwhile, eight flat plate type electrodes are evenly distributed on the periphery of the cylindrical cavity in the upper surface of the silicon wafer and around the hemispherical resonator, and the eight flat plate type electrodes are composed of the four driving electrodes and the four detection electrodes. All the driving electrodes and all the detection electrodes are not in contact with the hemispherical resonator, identical gaps exist, and the driving electrodes and the detection electrodes are arranged in sequence alternately. The prepared glass metal blowing type micro-hemispherical resonator gyroscope has the advantages of being simple in structure, low in surface stress, high in symmetry and the like, and therefore the micro-hemispherical resonator gyroscope can have stable performance and a wider application range.

The invention belongs to the photoelectron device field and particularly relates to a method based on 3D printing for manufacturing LED devices. According to the method, epitaxial wafer which at least has a buffer layer, an N-type layer, a multi-period quantum well active layer and a P-type layer and is generated by MOCVD or MBE is taken as a substrate material, an ITO conduction layer is printed on a P-type layer table top through 3D printing, an N-type layer table top is then etched, and N-type electrode and P-type electrode layers are then printed. The LED device electrode structure is formed through 3D printing, steps of photoetching and corrosion in an electrode manufacturing process can not only be reduced, the production period is shortened, pollution and damage to the epitaxial wafer in a photoetching and corrosion process can be reduced, damage of a high temperature annealing process during electrode formation to the quantum well active region interface structure can be reduced, and thereby light emitting efficiency of the LED devices can be improved.

The invention relates to a method for manufacturing a thin-film transistor baseplate, which comprises the following steps: an insulating base is provided; a grid groove is formed on the insulating base; a grid metal layer is deposited; chemical and mechanical grinding is performed to the grid metal layer to form a grid electrode; a grid insulating layer, a semiconductor layer and a first passivation layer are deposited in sequence; a source electrode groove and a drain electrode are formed; a source/drain electrode metal layer is deposited; chemical and mechanical grinding is performed to the source/drain electrode metal layer to form a source electrode and a drain electrode; a second passivation layer is deposited; a pixel electrode groove is formed and the drain electrode is exposed; a conductor layer is deposited; and a pixel electrode is formed.

The invention provides a transflective liquid crystal device and an electronic apparatus using the same which do not cause a non-uniformity in the substrate gap, even though a layer-thickness adjusting layer is formed so that the layer thickness balance of a liquid crystal layer between a transmission display region and a reflection display region is optimized thereby. Below a counter electrode of a counter substrate of a transflective liquid crystal device, a color filter for transmission display, being thin and having a wide chromaticity region, is formed in a transmission display region, and a color filter for reflection display, being thick and having a narrow chromaticity region, is formed in a reflection display region. Further, the interval between a TFT array substrate and the counter substrate is adjusted by a columnar protrusion formed on the TFT array substrate, and a gap material is not dispersed between the TFT array substrate and the counter substrate.

The invention discloses a capacitive touch screen which comprises a substrate, an ITO (indium tin oxide) pattern layer, an insulation bridging layer and a jumping conductor pattern layer. The ITO pattern layer is arranged on the substrate, the insulation bridging layer covers the ITO pattern layer, the jumping conductor pattern layer covers the insulation bridging layer, and a black membrane pattern layer covers the jumping conductor pattern layer. A black membrane (BM) of the touch screen is manufactured by the process, after being exposed, the black membrane is only etched and is not peeled off, a low glare effect can be achieved, a peeling-off manufacturing procedure can be omitted, and yield is improved. Besides, the black membrane (BM) is used for shielding high glare generated by the jumping conductor pattern layer, and accordingly the appearance is improved.

Structure of the disclosed laser includes pump light source, epitaxial wafer, heat sink, outer cavity mirror, and double frequency crystal. The epitaxial wafer includes window layer, protection layer, active area, multiple layered Bragg reflector, and substrate. The active area includes quanta trap layer, and absorbing layer. Characters are that quanta trap layer includes light pumped vertical outer cavity face emission in high power of 2-3 pieces of quanta traps so as to raise fill factor of laser, efficiency of outer quanta trap, output power of device, and lowers current density of threshold value. The invention obtains circular symmetrical, linear polarized laser output in high power near to diffraction limit. Using the light pump mode, the invention possesses features of simplifying technique, reducing procedures such as photo etching, preparing poles, hard coat etc, and cost, as well as raising yield.

The present application provides a light-emitting diode and a manufacturing method thereof. In the light-emitting diode manufacturing method provided in the present application, on the one hand, the passivation layer is located between the second metal electrode and the transparent conductive layer, and via holes are formed on the passivation layer, so that The second metal electrode and the transparent conductive layer are electrically connected through the via hole on the passivation layer under the finger of the second metal electrode, so that the current is expanded, thereby playing the role of the current blocking layer in the prior art, and then can The current blocking layer is removed, saving the material cost of the current blocking layer. On the other hand, due to the manufacturing method of the light emitting diode provided in the present application, the current blocking layer is removed, and at least one photolithography process of the current blocking layer can be reduced, thereby reducing the cost of the photolithography process and simplifying the process.

The invention discloses an infrared detector structure with a high filling factor. The structure comprises a micro-bridge structure arranged on a substrate, and the micro-bridge structure comprises amicro-bridge floor, a support and an electric connection hole. The micro-bridge floor is sequentially provided with a first release protection layer, an infrared sensitive layer, a first metal electrode layer and a second release protection layer from bottom to top; a second metal electrode layer and a third release protection layer are sequentially arranged on the surface of the inner walls of the support and the electric connection hole; the second metal electrode layer is led out from an opening at the top of the inner walls of the support and electric connection hole, and is electrically connected with the first metal electrode layer; the second metal electrode layer achieves the electrical connection with the substrate through the support and the bottom opening of the electric connection hole, and the third release protection layer is led out from the support and the upper end opening part of the inner wall of the electric connection hole and is connected with the second release protection layer. The structure can further improve the product performance while improving the filling factor. The invention further discloses a manufacturing method of the infrared detector structurewith the high filling factor.

A method of fabricating an image sensor device is provided. First, a substrate comprising a pixel array region and a pad region is provided. A patterned metal layer and a first planarization layer having an opening exposing the patterned metal layer in the pad region are sequentially formed on the substrate. A color filter array is formed on the first planarization layer in the pixel array region. A second planarization layer is formed to cover the color filter array and filled into the opening. A plurality of microlens is formed above the color filter array on the second planarization layer. A capping layer is conformally formed on the microlens and the second planarization layer. An etching step is performed to remove the capping layer and the second planarization layer in the opening so as to expose the patterned metal layer in the pad region.