TFT (thin film transistor) backboard manufacturing method and TFT backboard structure
一种制造方法、背板的技术,应用在半导体/固态器件制造、半导体器件、电气元件等方向,能够解决接触阻抗占用部分像素面积等问题,达到提升产品良率、制程简单、效率提高的效果
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[0041] In order to further illustrate the technical means adopted by the present invention and its effects, the following describes in detail in conjunction with preferred embodiments of the present invention and accompanying drawings.
[0042] see figure 2 The flow chart of the manufacturing method of TFT backplane of the present invention, refer to simultaneously Figure 3 to Figure 7 A schematic diagram of the first embodiment of the manufacturing method of the TFT backplane of the present invention, the first embodiment is suitable for manufacturing a bottom-gate TFT backplane with an etching stopper layer. The manufacturing method of TFT backboard of the present invention comprises the following steps:
[0043] Step 1, providing a substrate 20 formed with a gate 21 , an insulating layer 22 and a semiconductor layer 23 .
[0044] The step 1 can be realized by existing technology. In step 1 of the first embodiment, the substrate 20 is a transparent substrate, preferably...
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