Three-dimensional nonvolatile memory array and preparation method thereof

Abstract

The invention provides a three-dimensional nonvolatile memory array and a preparation method thereof, and belongs to the technical field of a nonvolatile memory in the manufacturing technology of super-large-scale integration. The three-dimensional nonvolatile memory array comprises a substrate and a bottom electrode / isolation medium stack structure; a deep groove is etched on the bottom electrode / isolation medium stack structure; a variable-resistance material and a top electrode layer are deposited on the side wall of the deep groove; the bottom electrode and the top electrode are crossed on the side wall of the deep groove; and a variable-resistance material is arranged between the cross points; each cross point forms a variable-resistance memory unit; all the variable-resistance memory units form a three-dimensional variable-resistance memory array; and the three-dimensional variable-resistance memories in the array are isolated by the isolation medium layer. The invention can improve the storage density of the variable-resistance memory, while simplifying the process and reducing the process cost.

Description

technical field [0001] The invention belongs to the technical field of nonvolatile memory in VLSI manufacturing technology, and in particular relates to a three-dimensional structure nonvolatile memory array and a preparation method thereof. Background technique [0002] Non-volatile memory represented by flash memory is widely used in various products, such as mobile phones, notebooks, handheld computers and solid-state hard disks, because of its data retention ability in case of power failure and its advantages of rewritable data multiple times. communication equipment. Nowadays, flash memory has occupied most of the market share of non-volatile semiconductor memory. However, with the increasing demand for large capacity, low cost, low power consumption and high performance in the information society and the rapid development of semiconductor technology, now Some flash memory technology has been difficult to meet the needs of the development of non-volatile memory technol...

AI Technical Summary

Problems solved by technology

Resistive memory usually adopts a cross bar structure and a multi-layer stacking method to realize a three-dimensional architecture (such as figure 1 ), this method requires photolithography for each layer of electrodes to form a cross-hair structure, so the number of photolithography and etching is proportional to the number of stacked layers, which greatly increases the difficulty and cost of the process

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