Optical pump high-power vertical external cavity emitting laser

A high-power emitting laser technology, which is applied in lasers, laser components, semiconductor lasers, etc., can solve the problems of poor beam quality of semiconductor lasers, difficulty in achieving high-power laser output, and large volume of solid-state lasers, etc., to reduce the threshold current density , reduce cost, improve the effect of fill factor

Inactive Publication Date: 2005-12-21
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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Problems solved by technology

[0005] In order to solve the problem of large volume, high cost, and low conversion efficiency of solid-state lasers in the above technologies; the beam quality of semiconductor lasers is generally poor, and the shaping system is complicated and difficult to manufacture; especially the previous optically pumped vertical external cavity surface emitting lasers are difficult to achieve high power The problem of laser output, the object of the present invention is to obtain a kind of linearly polarized, circularly symmetrical, high-power laser output close to the diffraction limit, an important feature of the present invention is to provide a kind of periodic gain structure comprising 2- Optically pumped high-power vertical external-cavity surface-emitting lasers with three quantum wells, and adding frequency-doubling crystals and saturable absorption mirrors in the external cavity of the laser for frequency doubling, passive mode-locking and Q-switching can expand the range of output wavelengths

Method used

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  • Optical pump high-power vertical external cavity emitting laser
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Embodiment 1

[0016] Such as figure 1 with figure 2 As shown, an optically pumped high-power vertical external-cavity surface-emitting laser includes: a pumping light source 1, an epitaxial wafer 2, a heat sink 3, an external cavity mirror 4, and a frequency-doubling crystal 5; , the pump light source 1 is an 800-810nm high-power fiber-coupled module. The epitaxial wafer 2 is composed of semiconductor materials, and the epitaxial wafer 2 includes: a window layer 6, a protective layer 7, an active region 8, a multilayer Bragg mirror 11 and a substrate 12; the window layer 6 is AlAs or Si 3 N 4 or HfO 2 or SiN x o y . The protective layer 7 is GaAs. The active region 8 is composed of a quantum well layer 9 and an absorbing layer 10; the laser output with a wavelength of 425nm-1800nm ​​can be obtained by selecting different material systems for the active region 8. The quantum well layer 9 includes 2-3 quantum wells, which can repeat 9-21 periods, and can be made of InGaAs material fo...

Embodiment 2

[0018] Embodiment 2: the pumping light source in embodiment 1 is replaced by 975-1250nm high-power semiconductor laser, the window layer 6 is replaced by InP, the active region 8 is replaced by InGaAsP / InP material, and the multilayer Bragg reflector 11 is replaced by InP / InP InGaAsP, the substrate 12 is replaced by InP, and the external cavity mirror 4 is highly reflective to 1550nm light to obtain a vertical external cavity surface emitting laser with a laser output of 1550nm.

Embodiment 3

[0019] Embodiment 3: Replace the multilayer Bragg reflector 11 in Embodiments 1 and 2 with multilayer aluminum, silver, gold or platinum metal materials, and the rest of the components and structures are as above, and the laser output of 980nm or 1550nm can be realized.

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Abstract

Structure of the disclosed laser includes pump light source, epitaxial wafer, heat sink, outer cavity mirror, and double frequency crystal. The epitaxial wafer includes window layer, protection layer, active area, multiple layered Bragg reflector, and substrate. The active area includes quanta trap layer, and absorbing layer. Characters are that quanta trap layer includes light pumped vertical outer cavity face emission in high power of 2-3 pieces of quanta traps so as to raise fill factor of laser, efficiency of outer quanta trap, output power of device, and lowers current density of threshold value. The invention obtains circular symmetrical, linear polarized laser output in high power near to diffraction limit. Using the light pump mode, the invention possesses features of simplifying technique, reducing procedures such as photo etching, preparing poles, hard coat etc, and cost, as well as raising yield.

Description

Technical field: [0001] The invention belongs to the technical field of semiconductor lasers, and relates to the structural design of vertical external cavity surface emitting lasers. Background technique: [0002] Vertical external-cavity surface-emitting laser is a kind of surface-emitting laser. It is a new type of device in semiconductor laser technology. It is widely used in laser display, laser communication, material processing, medical treatment, And national defense engineering and other fields have broad application prospects. In particular, its characteristics of easy frequency doubling and two-dimensional planar array can realize high-power laser output with high beam quality. These advantages make it very popular in the fields of industrial processing, solid-state laser and fiber laser pumping, and crystal frequency doubling. development prospects. [0003] Vertical external-cavity surface-emitting lasers have great advantages over solid-state lasers and edge-...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/183
Inventor 路国光单肖楠何春凤秦丽宴长岭
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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