The invention discloses a 1T1R and 1R resistive random access memory integrated structure and an implement method thereof. Resistive random access memory structures with MIM structures are manufactured on a drain electrode and a source electrode of an original substrate transistor respectively at the same time, a first layer of metal front medium, a first layer of plug, a first layer of metal, a second layer of inter-layer medium, a second layer of plug, an MIM structure layer, a third layer of inter-layer medium, a third layer of plug, a second layer of metal and a passivation layer are sequentially and respectively formed above the drain electrode and the source electrode of the substrate transistor, and the substrate transistor is connected with resistive random access memories in series. The resistive random access memory in the 1T1R structure and the resistive random access memory in the 1R structure are manufactured at the same time, the technological conditions are completely the same, the photo-etching times can be reduced, manufacturing cost is reduced, meanwhile, the 1T1R structure and the 1R structure are integrated, the characteristics of the resistive random access memories in the two structures can be compared conveniently, and the effect on the changing characteristic of a device from the current overshoot can be studied.