The invention provides a high-voltage withstanding device in a bipolar low-voltage process and a manufacturing method thereof. In the high-voltage withstanding device in the bipolar low-voltage process, a lightly doped region with low doping concentration is formed on an upper isolation region surrounding a current collection zone, the width of an earth-pole lead is more than that of the lightly doped zone, one side, facing the current collection zone, of the lightly doped region surpasses the upper isolation region by a certain width, one side, facing the current collection zone, of the earth-pole lead surpasses the lightly doped region by a certain width, so that the device in high-voltage work is prevented from a situation that a large amount of charges accumulate at an apex angle position of the upper isolation zone, the breakdown problem caused by charge accumulation is prevented, and thus, the performance of the device is increased. In addition, a silicon nitride layer on a first interlayer dielectric layer is combined with a passivation layer of a silicon-nitride-containing thin film layer, so that mobile ions can be effectively prevented from entering a strong electric field region in the high-voltage device structure to cause pollution, and thus, the high-temperature and high-voltage reliability of the high-voltage device can be guaranteed.