Cadmium telluride thin film battery with composite back electrode and preparation method of battery

A cadmium telluride, back electrode technology, applied in circuits, photovoltaic power generation, electrical components and other directions, can solve the problems of high raw material cost, affect the final performance of the battery, and high preparation cost, reduce interface loss, improve collection and transfer capacity, The effect of improving photoelectric performance

Inactive Publication Date: 2018-03-06
CNBM CHENGDU OPTOELECTRONICS MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the existing solar thin film batteries, the back electrode of the battery generally adopts a single metal electrode, such as Au, Ag, Mo, Pt, Cu, Ni, etc. This kind of electrode is either high in raw material cost or high in preparation cost, or it is different from the thin film battery. The combination is not good, resulting in a decrease in the current collection ability, which in turn affects the final performance of the battery

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  • Cadmium telluride thin film battery with composite back electrode and preparation method of battery

Examples

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Effect test

Embodiment 1

[0036] Such as figure 1 As shown, a cadmium telluride thin film solar cell with a composite back electrode is sequentially arranged with an FTO conductive glass substrate layer, a cadmium sulfide window layer, a cadmium telluride absorption layer, a copper-doped zinc telluride absorption layer, and a molybdenum / nickel vanadium composite Back electrode layer. The thickness of the substrate layer is 50 nm, the thickness of the window layer is 100 nm, the thickness of the absorption layer is 2.5 μm, the thickness of the back contact layer is 20 nm, and the thickness of the composite back electrode layer is 200 nm.

[0037] The method for preparing the above-mentioned cadmium telluride thin film solar cell includes the following steps:

[0038] (1) Using FTO conductive glass as the substrate material, the thickness of the conductive film is 50nm, and it is cut into a size of 2.5cm×4cm. The ultrasonic cleaning method is used to clean with anhydrous ethanol solution, acetone solution an...

Embodiment 2

[0047] Such as figure 1 As shown, a cadmium telluride thin film solar cell with a composite back electrode is sequentially arranged with an FTO conductive glass substrate layer, a cadmium sulfide window layer, a cadmium telluride absorption layer, a copper-doped zinc telluride absorption layer, and a molybdenum / nickel vanadium composite Back electrode layer. The thickness of the substrate layer is 100 nm, the thickness of the window layer is 150 nm, the thickness of the absorption layer is 3 μm, the thickness of the back contact layer is 40 nm, and the thickness of the composite back electrode layer is 250 nm.

[0048] The method for preparing the above-mentioned cadmium telluride thin film solar cell includes the following steps:

[0049] (1) Using FTO conductive glass as the substrate material, the thickness of the conductive film is 100nm, and it is cut into a size of 2.5cm×4cm. The ultrasonic cleaning method is used, followed by anhydrous ethanol solution, acetone solution, an...

Embodiment 3

[0058] Such as figure 1 As shown, a cadmium telluride thin film solar cell with a composite back electrode is sequentially arranged with an FTO conductive glass substrate layer, a cadmium sulfide window layer, a cadmium telluride absorption layer, a copper-doped zinc telluride absorption layer, and a molybdenum / nickel vanadium composite Back electrode layer. The thickness of the substrate layer is 150 nm, the thickness of the window layer is 200 nm, the thickness of the absorption layer is 3.5 μm, the thickness of the back contact layer is 60 nm, and the thickness of the composite back electrode layer is 500 nm.

[0059] The method for preparing the above-mentioned cadmium telluride thin film solar cell includes the following steps:

[0060] (1) Use FTO conductive glass as the substrate material, the thickness of the conductive film is 150nm, cut it into a size of 2.5cm×4cm, use the ultrasonic cleaning method, wash with anhydrous ethanol solution, acetone solution, and distilled w...

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Abstract

The invention discloses a cadmium telluride thin film solar battery with a composite back electrode and a preparation method of the battery. The solar battery comprises a substrate layer, a window layer, an absorption layer, a back contact layer and a composite back electrode layer in sequence; the window layer adopts the material of cadmium sulfide; the adsorption layer adopts the material of cadmium telluride; the back contact layer adopts the material of copper-doped zinc telluride; and the composite back electrode layer is formed by a molybdenum layer and a nickel vanadium layer. The battery adopts the molybdenum and nickel vanadium composite back electrode structure, so that combination of the thin film interface in the battery can be improved, the interface loss can be lowered, and the collection and transfer capability of the interface current can be improved, thereby further improving photoelectric performance of the battery.

Description

Technical field [0001] The invention relates to the field of thin film solar cells, in particular to a cadmium telluride thin film battery with a composite back electrode and a preparation method thereof. Background technique [0002] With the increasing scarcity of traditional energy, the development and utilization of new energy has become an important means to solve the energy crisis. Among the many new energy sources, including solar energy, ocean energy, geothermal energy, tidal energy, biomass energy, etc., solar energy has become the leader of new energy due to its clean, pollution-free and abundant reserves. After years of development, the second-generation compound thin-film battery has attracted the attention of many research institutions and companies, and some have been industrialized. As a branch of compound thin film solar cells, CdTe battery has great research value and commercial value, and has received extensive attention in the industry. [0003] The band gap of...

Claims

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Application Information

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IPC IPC(8): H01L31/0224H01L31/18
CPCH01L31/022441H01L31/1836Y02E10/50Y02P70/50
Inventor 彭寿马立云潘锦功殷新建文秋香
Owner CNBM CHENGDU OPTOELECTRONICS MATERIAL
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