The invention discloses a preparation method of a high-temperature-resistant
supercapacitor based on GaN as an
electrode material, and mainly solves the problem of complex
electrode preparation process in the prior art. According to the implementation scheme, photoetching is carried out on a target substrate to obtain a patterned
photoresist-target substrate structure, and a layer of
metal current collector is deposited on the patterned
photoresist-target substrate structure; performing
photoresist stripping treatment on the sample of the
current collector / photoresist-target substrate, performing secondary photoetching to form a photoresist-
current collector-target substrate structure, performing ICP
etching on the photoresist-current collector-target substrate structure, and patterning the target substrate to obtain required positive and negative
electrode regions; and carrying out photoresist stripping and annealing on the patterned photoresist-current collector-target substrate sample to obtain a patterned current collector-target substrate sample, and packaging the patterned current collector-target substrate sample by using a layer of
polydimethylsiloxane film to complete the preparation of the micro
supercapacitor. The complexity and the cost of electrode preparation are reduced, the production efficiency is improved, large-scale production can be realized, and the method can be used for
electronic equipment in a high-temperature environment.