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Flexible pressure sensor and preparation method thereof

A pressure sensor, flexible technology, applied in the field of semiconductors, can solve the problems of easy aggregation of carbon nanotubes, low repeatability, poor stability, etc., and achieve the effect of simple preparation process, good performance and low cost

Active Publication Date: 2017-02-22
江苏科华智能控制设备有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this patent realizes the preparation of flexible sensors on flexible substrates, due to the characteristics of easy agglomeration of carbon nanotubes, they have defects such as poor controllability, low repeatability, and poor stability as a sensitive material alone.

Method used

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  • Flexible pressure sensor and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] Such as figure 1 Shown: a flexible pressure sensor, including a flexible substrate 1, a flexible upper cover 5 and electrodes 4 spaced between the flexible substrate 1 and the flexible upper cover 5, the electrodes 4 are arranged between There is a circuit composed of a semiconductor resistor 3 and a conductive channel 2.

[0040] The circuit is a Wheatstone bridge, and the material of the electrode 4 is Au.

[0041] The semiconductor resistor 3 is made of carbon nanotube / polyimide composite material.

[0042] The material of the flexible substrate 1 and the flexible upper cover 5 is polyimide.

[0043] Preparation

[0044] A method for preparing a flexible pressure sensor, comprising the steps of:

[0045] 1. The flexible substrate 1 is formed on a hard substrate by spin coating and then solidified. Specifically, the hard substrate is a silicon substrate. First, the silicon substrate is cleaned and cleaned with dilute sulfuric acid solution, Acetone solution, etc....

Embodiment 2

[0058] A flexible pressure sensor, comprising a flexible substrate 1, a flexible upper cover 5, and electrodes 4 spaced between the flexible substrate 1 and the flexible upper cover 5, and semiconductor resistors are arranged between the electrodes 4 3 and the circuit composed of conductive channel 2.

[0059] The circuit is a Wheatstone bridge. The material of the electrode 4 is Ti / Cu.

[0060] The semiconductor resistor 3 is made of carbon nanotube / polyethylene terephthalate (PET) composite material.

[0061] The material of the flexible substrate 1 and the flexible upper cover 5 is polydimethylsiloxane (PDMS).

[0062] Preparation

[0063] A method for preparing a flexible pressure sensor, comprising the steps of:

[0064] 1) The flexible substrate 1 is formed on a hard substrate by spin coating and then solidified. Specifically, the hard substrate is a silicon substrate. Acetone solution, etc. are used for pollutant treatment, and then ultrasonically cleaned with deio...

Embodiment 3

[0077] A flexible pressure sensor, comprising a flexible substrate 1, a flexible upper cover 5, and electrodes 4 spaced between the flexible substrate 1 and the flexible upper cover 5, and semiconductor resistors are arranged between the electrodes 4 3 and the circuit composed of conductive channel 2.

[0078] The circuit is a Wheatstone bridge. The material of the electrode 4 is Ag.

[0079] The semiconductor resistor 3 is made of carbon nanotube / graphene composite material.

[0080] The material of the flexible substrate 1 is polyethylene terephthalate (PET).

[0081] The material of the flexible upper cover 5 is micro polyimide.

[0082] Preparation

[0083] A method for preparing a flexible pressure sensor, characterized in that it comprises:

[0084] (1) The flexible substrate 1 is formed on the hard substrate by spin coating and then solidified. Specifically, the hard substrate adopts a PET substrate. First, the PET substrate is cleaned and cleaned with dilute sulfu...

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Abstract

The invention provides a flexible pressure sensor. The flexible pressure sensor comprises a flexible substrate, a flexible upper cover and electrodes arranged between the flexible substrate and the flexible upper cover at intervals. A circuit with semiconductor resistors and conductive channels is arranged between the electrodes. The micro-nano processing technology is combined with the modern printing electronic technology, so the Wheatstone bridge type pressure sensor can be built on the pure flexible substrate, the defects that the process of a technology for preparing a hard substrate (like silicon) pressure sensor through a traditional semiconductor technology is complex, and influences of the high-temperature technology are large are avoided, and integrated preparation of the flexible sensor is achieved. The micro-nano processing technology, the modern printing electronic technology, nano-carbon materials, polymer materials and the like are combined, so the flexible pressure sensor of a Wheatstone bridge structure is prepared on the flexible substrate, and the pressure sensor is simple in preparation process, low in cost, good in performance and suitable for large-scale production.

Description

technical field [0001] The invention relates to a flexible pressure sensor and a preparation method thereof, belonging to the technical field of semiconductors. Background technique [0002] Since the 1980s, sensors based on micro-electro-mechanical system (Micro-Electro-Mechanical System, MEMS) technology have been developed very rapidly. Compared with traditional sensors, MEMS sensors have the characteristics of small size, light weight, low cost, low power consumption, high reliability, suitable for mass production, easy integration and intelligentization. At the same time, the feature size on the order of microns enables it to complete some functions that cannot be realized by traditional mechanical sensors. [0003] Among them, the MEMS pressure sensor is the earliest micro-electro-mechanical system product to be developed, and it is also the most mature and the earliest product to start industrialization in micro-electro-mechanical technology. From the perspective of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01L1/18
CPCG01L1/18
Inventor 刘瑞袁妍妍王小京
Owner 江苏科华智能控制设备有限公司
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