GaN based monolithic power inverter and manufacturing method thereof

Abstract

The present invention discloses a GaN based monolithic power inverter and a manufacturing method thereof. The power inverter comprises: a heterojunction epitaxial substrate; passivation layers formedon the heterojunction epitaxial substrate and provided with a plurality of hollow areas between the passivation layers; a normally OFF power triode structure formed in the hollow areas in the plurality of the hollow areas and comprising a first source electrode, a first drain electrode and a first grid electrode, wherein the first source electrode and the first drain electrode both achieve Ohmic contact with a thin barrier layer, and the first grid electrode and the thin barrier layer achieve insulation through a first gate dielectric layer located at the lower portion the first grid electrode; and an normally ON power triode structure formed at the other hollow areas in the plurality of hollow areas and comprising a second source electrode, a second drain electrode and a second grid electrode, wherein the second source electrode and the second drain electrode both achieve Ohmic contact with the thin barrier layer, and the second grid electrode and the passivation layers achieve insulation through a second gate dielectric layer located at the lower portion the second grid electrode or the second grid electrode is in direct contact with the passivation layers. The preparation technology of the power converter is simple, the structure is diversified, and the device yield is improved.

Description

Technical field [0001] The present disclosure belongs to the technical field of semiconductor devices, and relates to a GaN-based monolithic power inverter and a manufacturing method thereof. Background technique [0002] The power inverter (power inverter) composed of cascaded power transistors of enhanced (normally OFF) and depleted (normall ON) power transistors is the basic unit of the inverter circuit and is applied to various DC / AC conversion modules. However, it is currently difficult to achieve high-performance enhanced and depleted GaN-based power diodes on the same substrate at the same time, which restricts the development of GaN-based power integrated circuits to high-efficiency, small-scale and intelligent applications. Therefore, there is an urgent need to provide a new monolithic integrated power inverter and manufacturing method that can realize both enhancement mode and depletion mode on the same substrate, and the manufacturing process is simple and convenient, ...

AI Technical Summary

Problems solved by technology

However, it is very difficult to realize high-performance enhancement mode and depletion mode GaN-based power diodes on the same substrate at the same time, which restricts the development of GaN-based power integrated circuits in the direction of high-efficiency, small and intelligent applications.

Images