High-voltage withstanding device in bipolar low-voltage process and manufacturing method thereof

Abstract

The invention provides a high-voltage withstanding device in a bipolar low-voltage process and a manufacturing method thereof. In the high-voltage withstanding device in the bipolar low-voltage process, a lightly doped region with low doping concentration is formed on an upper isolation region surrounding a current collection zone, the width of an earth-pole lead is more than that of the lightly doped zone, one side, facing the current collection zone, of the lightly doped region surpasses the upper isolation region by a certain width, one side, facing the current collection zone, of the earth-pole lead surpasses the lightly doped region by a certain width, so that the device in high-voltage work is prevented from a situation that a large amount of charges accumulate at an apex angle position of the upper isolation zone, the breakdown problem caused by charge accumulation is prevented, and thus, the performance of the device is increased. In addition, a silicon nitride layer on a first interlayer dielectric layer is combined with a passivation layer of a silicon-nitride-containing thin film layer, so that mobile ions can be effectively prevented from entering a strong electric field region in the high-voltage device structure to cause pollution, and thus, the high-temperature and high-voltage reliability of the high-voltage device can be guaranteed.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a high-voltage-resistant device in a Bipolar low-voltage process and a manufacturing method thereof. Background technique [0002] The classification of the traditional Bipolar (bipolar) process platform is generally formulated based on the maximum operating voltage that the standard NPN transistor manufactured by the process platform can withstand; the maximum operating voltage of the standard NPN transistor is from the collector area (C pole) to the emitter area ( The withstand voltage of E pole) (ie, CE withstand voltage) is determined. The CE withstand voltage is mainly determined by the epitaxial thickness and resistivity, and the base concentration and junction depth will also affect it; the epitaxial thickness determines the isolation rule and process, and the isolation rule and process The layout area is also determined; therefore, the Bipolar low-volt...

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Problems solved by technology

The reliability failure of high-temperature operation is manifested in that when this type of circuit works at high temperature and high pressure, the high voltage is applied to the isolated PN junction with a large electric field strength, which will cause hot carrier injection, which will cause the leakage of the isolated PN junction to be too large, and at the same time, the chip internal Or the impact of external mobile ions will worsen the leakage problem and cause the circuit function to fail

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