Preparation method of laminated anode of strong microcavity device

An anode and microcavity technology, which is applied in the field of strong microcavity devices, can solve the problems of no relatively mature and stable laminated anode preparation process, low light extraction efficiency, and impure light color.

Active Publication Date: 2021-09-10
ANHUI SEMICON INTEGRATED DISPLAY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, silicon-based Micro OLED microdisplay devices with a single-layer anode structure have problems such as impure light color, low light extraction efficiency, and narrow color gamut. Achieve the function of adjusting the cavity length
At present, there is no relatively mature and stable laminated anode preparation process

Method used

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  • Preparation method of laminated anode of strong microcavity device
  • Preparation method of laminated anode of strong microcavity device
  • Preparation method of laminated anode of strong microcavity device

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Embodiment Construction

[0039] Below with reference to the accompanying drawings, through the description of the embodiments, the specific embodiments of the present invention, such as the shape, structure, mutual position and connection relationship between the various parts, the role and working principle of the various parts, etc., will be further described. Detailed instructions:

[0040] as attached figure 1 - attached Image 6Shown, the present invention is a kind of preparation method of strong microcavity device stacked anode, the steps of the preparation method of described strong microcavity device stacked anode are: S1. metal reflective layer and B anode film forming; S2.B -HM preparation; for B-HM preparation, the PECVD film formation process is performed on the wafer that has completed the B anode process, and the SiO or SiN film layer is selected, and the film thickness is selected from 3000A to 4000A; this film layer is selected to ensure that it meets the subsequent dry method Etchi...

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Abstract

The invention provides a preparation method of a laminated anode of a strong microcavity device. The preparation method of the laminated anode of the strong microcavity device is applied to the technical field of strong microcavity devices. The preparation method of the laminated anode of the strong microcavity device comprises the steps: S1, enabling a metal reflecting layer and a B anode to form a film; S2, preparing B-HM; during B-HM preparation, performing a PECVD (plasma enhanced chemical vapor deposition) film forming process on a wafer subjected to a B anode process, selecting a SiO or SiN film layer, and selecting the thickness of the film layer is selected to be 3000A-4000A; S3, preparing a G-anode; S4, preparing G-HM; S5, preparing an R-anode; and S6, removing HM, and completing laminated anode preparation. According to the preparation method of the laminated anode of the strong microcavity device, the preparation process is changed, dislocation photoetching is carried out, the photoetching times are reduced, each sub-pixel anode is protected in the preparation process under the condition that the few photoetching times are ensured, the yield of the anode manufacturing process is ensured, and the yield of the anode manufacturing process is ensured, and through hard mask protection. damage to the pixel anode in the preparation process is avoided, so that preparation of the laminated anode is completed.

Description

technical field [0001] The invention belongs to the technical field of strong microcavity devices, and more specifically relates to a method for preparing laminated anodes of strong microcavity devices. Background technique [0002] Silicon-based Micro OLED microdisplay devices generally use white light devices with color filters to achieve full-color solutions. At present, due to the low yield rate of silicon-based Micro OLED devices, in order to avoid a large yield loss, the current anode structure generally chooses a simple single-layer thickness structure. This structure has a simple process, but because the anode sub-pixel has the same thickness, When matching with the subsequent color filter layer, it cannot be effectively matched, resulting in impure light color of the device and low light extraction efficiency. In order to make the light output of the device more pure and efficient, the BGR of the device needs to have different cavity lengths. The thickness of the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/56H01L51/52
CPCH10K50/81H10K71/00Y02P70/50
Inventor 曹贺刘晓佳吕迅刘胜芳赵铮涛潘倩倩
Owner ANHUI SEMICON INTEGRATED DISPLAY TECH CO LTD
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