Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

BCD device and manufacturing method thereof

A manufacturing method and device technology, applied in the field of BCD devices and their manufacturing, can solve the problems of low efficiency and high lithography cost

Active Publication Date: 2016-02-17
HANGZHOU SILAN MICROELECTRONICS
View PDF9 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, the low-voltage well and the high-voltage well need to be formed by different lithography processes, resulting in high lithography costs and low efficiency.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • BCD device and manufacturing method thereof
  • BCD device and manufacturing method thereof
  • BCD device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0155] The present invention will be further described below with reference to specific embodiments and drawings, but the protection scope of the present invention should not be limited by this.

[0156] In the BCD device of this embodiment, the semiconductor substrate includes a high-voltage device area and a low-voltage device area, wherein one or more N-type doped high-voltage wells are formed in both the high-voltage device area and the low-voltage device area, and at least part of the high-voltage device The composition structure is formed in the high-voltage well in the high-voltage device region, and at least part of the low-voltage devices are formed in the high-voltage well in the low-voltage device region.

[0157] Preferably, each high-voltage well in the high-voltage device region and the low-voltage device region can be formed using the same photolithography and ion implantation process steps, so as to save the number of photolithography and reduce the cost. In additio...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a BCD (Bipolar-CMOS-DMOS) device and a manufacturing method thereof. The BCD device comprises a semiconductor substrate and a plurality of N type doped high voltage wells, wherein the semiconductor substrate includes a high voltage device area and a low voltage device area; the high voltage device area is used for forming high voltage devices; the low voltage device area is used for forming low voltage devices; the plurality of N type doped high voltage wells are distributed in the high voltage device area and the low voltage device area; at least part of the component structures of the high voltage devices are formed in the high voltage wells of the high voltage device area; and at least part of the low voltage devices are formed in the high voltage wells of the low voltage device area. The BCD device and the manufacturing method thereof can reduce the frequency for the photoetching process, and can be conductive to cost reduction and efficiency improvement.

Description

Technical field [0001] The present invention relates to BCD technology, in particular to a BCD device and a manufacturing method thereof. Background technique [0002] BCD (Bipolar-CMOS-DMOS) technology is a monolithic integrated process technology. This technology can make diodes (Bipolar), complementary metal oxide semiconductor field effect transistors (CMOS) and double diffused metal oxide semiconductor field effect transistors (DMOS) devices on the same chip, so it is called BCD technology for short. [0003] High-voltage BCD technology usually refers to BCD technology with a device withstand voltage above 100V. High-voltage BCD technology is currently widely used in AC-DC power supplies, LED drivers and other fields. Generally, the withstand voltage of the device is required to reach 500V to 800V. [0004] In the prior art, high-voltage devices and low-voltage devices are often integrated in BCD devices. For example, the high-voltage devices may be LDMOS devices, high-voltage...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/06H01L21/8249
CPCH01L21/8249H01L27/06
Inventor 姚国亮张邵华吴建兴
Owner HANGZHOU SILAN MICROELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com