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Light emitting diode epitaxial structure and display panel

ActiveCN224653904UReduce directional transportImplement extensions
The utility model relates to a kind of LED epitaxial structures, comprising: substrate;N type layer;Active layer is located on N type;P type layer, located on active layer;Wherein, the P type layer includes P type window layer, P type window layer includes several first laminated structure, each first laminated structure includes the GaInP layer, first GaP layer and second GaP layer of sequentially laminated, the P type doping concentration of second GaP layer in each first laminated structure is greater than the P type doping concentration of first GaP layer.The GaInP layer of the utility model has higher band gap, plays the role of optical window layer, can reduce light absorption loss;GaP has lower band gap, first GaP layer and second GaP layer play the role of buffer layer / transition layer, so the combination of GaInP layer, first GaP layer and second GaP layer realizes the balance of band matching and carrier transport efficiency, conducive to the efficient extension of current.
Owner:JIANGXI CHANGELIGHT SEMICONDUCTOR SCI-TECH CO LTD