The utility model relates to a kind of LED epitaxial structures, comprising: substrate;N type layer;
Active layer is located on N type;P type layer, located on
active layer;Wherein, the P type layer includes P type window layer, P type window layer includes several first laminated structure, each first laminated structure includes the GaInP layer, first GaP layer and second GaP layer of sequentially laminated, the
P type doping concentration of second GaP layer in each first laminated structure is greater than the
P type doping concentration of first GaP layer.The GaInP layer of the utility model has higher
band gap, plays the role of optical window layer, can reduce light
absorption loss;GaP has lower
band gap, first GaP layer and second GaP layer play the role of buffer layer /
transition layer, so the combination of GaInP layer, first GaP layer and second GaP layer realizes the balance of band matching and carrier transport efficiency, conducive to the efficient extension of current.