The invention discloses a thyristor chip with a seven-layer p-n junction isolation structure and a preparation method of the thyristor chip. The thyristor chip comprises an anode region P1, an N-type long base region, a short base region P2, an N<+>-type cathode region, a front oxidation film, a front gate metal electrode, a front cathode metal electrode, a back anode metal electrode, an annular passivation groove and an isolation ring of the seven-layer p-n junction isolation structure, wherein the isolation ring of the seven-layer p-n junction isolation structure comprises a boron impurity region, a boron-aluminum mixed impurity region, an aluminum impurity region, an aluminum-aluminum overlapping impurity region, an aluminum impurity region, the boron-aluminum mixed impurity region and the boron impurity region from top to bottom; and the isolation ring of the seven-layer p-n junction isolation structure is arranged between the front oxidation film and the back anode metal electrode along the vertical direction and surrounds the peripheries of the anode region P1, the N-type long base region and the short base region P2. The thyristor chip is short in diffusion time, low in production energy consumption, high in efficiency, high in silicon wafer integrity rate, little in transverse diffusion of the isolation region surface and small in isolation region width, and saves the area of the silicon wafer.