Junction field-effect transistor and manufacturing method thereof

Abstract

The invention relates to a junction field-effect transistor and a manufacturing method thereof. The junction field-effect transistor obtained by the manufacturing method includes an N-type substrate,an N-type epitaxial layer, a buried P-type gate region formed in the N-type epitaxial layer, an oxide layer, a gate trench penetrating through the oxide layer and extending to the P-type gate region,a P-type diffusion region formed on the inner wall of the gate trench and connected to the P-type gate region, polysilicon formed in the gate trench, an N-type region formed on the surface of the N-type epitaxial layer, an opening penetrating through the oxide layer and corresponding to the N-type region, gate metal formed on the oxide layer and the gate trench and connected to the polysilicon, source metal, and drain metal. The P-type gate region includes a plurality of first parallel bar portions and a plurality of second bar portions perpendicularly intersecting with the first bar portions,the outermost second bar portion being in contact with the gate trench and the P-type diffusion region, and the first bar portion at one side of the outermost second bar portion and the second bar portion being located below the N-type region.

Description

【Technical field】 [0001] The invention relates to the technical field of semiconductor manufacturing technology, in particular to a junction field effect transistor and a manufacturing method thereof. 【Background technique】 [0002] Junction Field-Effect Transistor (JFET) is a three-terminal active device with amplification function composed of p-n junction gate (G), source (S) and drain (D). Its working principle is to control the output current by changing the conductivity of the channel through the voltage. [0003] For junction field effect transistors, according to the working principle, (JFET) can be mainly divided into enhancement type and depletion type JFET devices, but the most common one is depletion type JFET (D-JFET), namely A channeled JFET exists at zero gate bias. [0004] The channel where the JFET conducts electricity is in the body. The difference in process and structure between the depletion-type and enhancement-type transistors mainly lies in the dop...

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Problems solved by technology

However, for existing junction field effect transistors, how to make the effective channel area of ​​the device larger, the source area larger, the device saturatio

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