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Preparation method of PERC battery

A battery and power supply technology, applied in chemical instruments and methods, circuits, photovoltaic power generation, etc., can solve the problems of low efficiency of PERC cells, low efficiency, poor passivation efficiency of passivation film, etc., and increase the polishing effect , improve the uniformity, improve the effect of passivation effect

Pending Publication Date: 2021-04-09
ZHEJIANG BEYONDSUN PV
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  • Claims
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Problems solved by technology

Use HF / HNO3 solution to back polish and remove PSG on the diffused silicon wafer, control the etching weight loss at 0.2g-0.35g, and control the reflectivity at 20%-30%; prepare Al 2 o 3 / SiNx passivation film, the thickness of the passivation film is controlled at 80-150nm. After etching and depositing the passivation film, the passivation efficiency of the passivation film is not very good, resulting in low efficiency of the PERC battery. Therefore, this Apply for research on the above-mentioned problems of low efficiency of PERC cells caused by the process of etching and depositing passivation film

Method used

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  • Preparation method of PERC battery
  • Preparation method of PERC battery
  • Preparation method of PERC battery

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Embodiment Construction

[0027] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. Unless otherwise defined, all terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that commonly used terms should be interpreted to have a meaning consistent with their meaning in the relevant art and this disclosure. This disclosure is to be considered as an example of the invention and is not intended to limit the invention to the particular embodiments.

[0028] This embodiment provides a method for preparing a PERC battery, which is mainly used to improve the efficiency of the PERC battery. The method comprises: successively a diffusion step, an etching step, and a back film step, wherein an etching solution is used in the etching step, and the chemical composition of the etching solution includes HNO 3 , HF, H 2 SO...

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Abstract

The invention belongs to the technical field of photovoltaics, and particularly relates to a preparation method of a PERC battery. The method is mainly used for improving the efficiency of the PERC battery. The method comprises a diffusion step, an etching step and a back film step which are carried out in sequence, an etching solution is adopted in the etching step, and chemical components of the etching solution comprise HNO3, HF, H2SO4 and H2O; and in the back film step, SiH4 and NH3 are adopted to carry out film coating deposition on the back surface of the silicon wafer, and the film coating deposition times is twice. Compared with the prior art, the method increases the refractive index of the silicon wafer substrate, increases the light absorption rate of the PERC cell, and increases the efficiency of the PERC cell.

Description

technical field [0001] The invention belongs to the technical field of photovoltaics, and specifically relates to a method for preparing a PERC battery, which is mainly used to improve the efficiency of the PERC battery. Background technique [0002] With the advancement of science and technology and the enhancement of environmental protection awareness, PERC batteries cater to the needs of environmental protection and energy saving and become an important part of new energy research and development. Application No. 202010213511.7 is a method for preparing high-efficiency monocrystalline silicon PERC solar cells, including texturing—diffusion—etching—annealing—printing and curing mask material on the front—depositing SINx anti-reflection film on the front— Removal of mask material—deposit SiNx / AlOx passivation film on the back—laser on the back—print back electrode and back electric field—TCO deposition—print positive electrode and cure at low temperature. Use HF / HNO3 solut...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/068C23F1/24C23C16/34C23C16/02
CPCH01L31/1804H01L31/1868H01L31/0682C09K13/08C23C16/345C23C16/0227Y02P70/50
Inventor 何一峰吕文辉邱小永严文生谭新玉赵庆国时利
Owner ZHEJIANG BEYONDSUN PV
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