Junction field effect transistor and method of manufacturing the same

Abstract

The invention relates to a junction field effect transistor and a manufacturing method thereof. The junction field effect transistor obtained by the above manufacturing method includes: N-type substrate, N-type epitaxial layer, buried P-type gate region formed in the N-type epitaxial layer, oxide layer, penetrating through the oxide layer and extending to P-type The gate trench in the gate region, the P-type diffusion region formed on the inner wall of the gate trench and connected to the P-type gate region, the polysilicon formed in the gate trench, the N-type region formed on the surface of the N-type epitaxial layer, the through The oxide layer corresponds to the opening of the N-type region, the gate metal connected to the polysilicon, the source metal, and the drain metal formed on the oxide layer and the gate trench, and the P-type gate region includes a plurality of parallel first strips. shaped part and a plurality of second strip-shaped parts perpendicular to the first strip-shaped part, the outermost second strip-shaped part is in contact with the gate trench and the P-type diffusion region, and one side of the outermost second strip-shaped part The first strip portion and the second strip portion are located below the N-type region.

Description

【Technical field】 [0001] The invention relates to the technical field of semiconductor manufacturing technology, in particular to a junction field effect transistor and a manufacturing method thereof. 【Background technique】 [0002] Junction Field-Effect Transistor (JFET) is a three-terminal active device with amplification function composed of p-n junction gate (G), source (S) and drain (D). Its working principle is to control the output current by changing the conductivity of the channel through the voltage. [0003] For junction field effect transistors, according to the working principle, (JFET) can be mainly divided into enhancement type and depletion type JFET devices, but the most common one is depletion type JFET (D-JFET), namely A channeled JFET exists at zero gate bias. [0004] The channel where the JFET conducts electricity is in the body. The difference in process and structure between the depletion-type and enhancement-type transistors mainly lies in the dop...

AI Technical Summary

Problems solved by technology

However, for existing junction field effect transistors, how to make the effective channel area of ​​the device larger, the source area larger, the device saturation current larger, and how to increase the sensitivity and gate reliability of the device, thereby improving device performance , is a very important technical issue

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