Patents
Literature
Patsnap Copilot is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.
Patsnap Copilot

166 results about "Co injection" patented technology

Barrier film

A barrier composition which is injection mouldable and able to be made into a transparent film or incorporated (by co-extrusion and/or lamination) into multi-layer film products, the composition on dry basis: a) from 45 to 90% by weight of a starch and/or a modified starch selected from starches modified by reaction with a hydroxyl alkyl group, an acetate or a dicarboxylic acid anhydride or a grafting polymer; b) from 4 to 12% by weight of a water soluble polymer selected from polyvinyl alcohol, polyvinylacetate, and copolymers of ethylene and vinylalcohol which have a melting point compatible with the molten state of the starch components c) from 5 to 45% by weight of a non-crystallising mixture of sorbitol and at least one other plasticizer selected from glycerol, maltitol, xylitol, mannitol, glycerol trioleate, epoxidised linseed or soybean oil, tributyl citrate, acetyl tri-ethyl citrate, glyceryl triacetate, 2,2,4-trimethyl-1,3-pentanediol diisobutyrate; polyethylene oxide or polyethylene glycol; d) from 0.3 to 2.5 % by weight of a C12-22 fatty acid or salt; e) from 0.25% to 3% of an emulsifier system having a hydrophilic lipophilic balance value between 2 and 10. The barrier film may be co-injection moulded with polyethylene terephthalate (PET) or polylactic acid (PLA) for blow moulding into beverage bottles, with polyethylene (PE) or polypropylene (PP) or biodegradable polymers for high gas-barrier containers or closures, or may be co-extruded with polyethylene, polypropylene or polylactic acid for thin film packaging applications or for blow-moulded containers.
Owner:PLANTIC TECH

Biaxially oriented, blown-molded bottles and preform thereof

The purpose of this invention is to set the position of the gas barrier layer in such a manner as to solve the problem of decreased accuracy of neck molding dimensions created by the thermal crystallization and the problem of interlaminar separation in the bottom, both of which are associated with the provision of the gas barrier layer. Problems should be solved without being affected by the displacement of the gas barrier layer, which may take place during the co-injection operation of the PET resin layers and the gas barrier layer.
A biaxially drawn, blow-molded bottle and its preform comprise at least a layer of a gas barrier material 3 laminated inside the PET resin layers 2, a functional portion 5 having a screw thread 8 raised spirally in the upper portion of neck 4 and also having a stop ring 6 disposed under the screw thread 8, and a neck ring 7 disposed at the lower end of the neck 4. In these preform and bottle, the leading edge 3a of the gas barrier layer 3 is positioned at a half height of the neck ring 7 where the most advanced front of the leading edge 3a neither reaches a half height of the stop ring 6 nor extends to the functional portion 5. It is intended here that the neck 4 would not be affected by the shrinking deformation caused by the existence of the gas barrier layer 3 in the functional portion 5 of the neck 4, which is treated for thermal crystallization.
Owner:YOSHINO KOGYOSHO CO LTD

Method for preparing semiconductor-on-insulator material by utilizing ion injection technology

The invention provides a method for preparing semiconductor-on-insulator material by utilizing an ion injection technology. The method comprises the steps that 1) a doped mono-crystal thin-film is formed on the surface of a first substrate; 2) a buffer layer and top layer semiconductor material are formed on the surface of the mono-crystal thin-film; 3) foreign ions are injected into the mono-crystal thin-film; 4) stripping ions are injected into the position of the preset depth in the first substrate below the mono-crystal thin-film; 5) bonding is performed between the top layer semiconductor material and a second substrate with an insulating layer; 6) and annealing processing is performed so that the first substrate and the buffer layer are separated from the mono-crystal thin-film, and the buffer layer is removed. Dual effect of ion co-injection and doped mono-crystal thin-film stripping is combined so that stripping dose is effectively reduced. The foreign ions are injected so that the mono-crystal thin-film is enabled to generate stress and adsorption capacity of the mono-crystal thin-film is increased. Stripping is realized after H-ion injection and annealing. Stripping occurs at the position of the ultrathin mono-crystal thin-film so that a crack is quite small, and the high-quality semiconductor-on-insulator material can be obtained.
Owner:SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products