Method for preparing semiconductor-on-insulator material by utilizing ion injection technology

A technology of ion implantation and insulators, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., and can solve difficult and costly problems

Active Publication Date: 2015-04-15
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
View PDF5 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a method for preparing semiconductor-on-insulator materials using ion implantation technology, which is used to solve the need for higher doses of ion implantation in the prior art to prepare semiconductor-on-insulator materials, problems such as high difficulty and high cost

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing semiconductor-on-insulator material by utilizing ion injection technology
  • Method for preparing semiconductor-on-insulator material by utilizing ion injection technology
  • Method for preparing semiconductor-on-insulator material by utilizing ion injection technology

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0037] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0038] see Figure 1 to Figure 9 . It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed arb...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention provides a method for preparing semiconductor-on-insulator material by utilizing an ion injection technology. The method comprises the steps that 1) a doped mono-crystal thin-film is formed on the surface of a first substrate; 2) a buffer layer and top layer semiconductor material are formed on the surface of the mono-crystal thin-film; 3) foreign ions are injected into the mono-crystal thin-film; 4) stripping ions are injected into the position of the preset depth in the first substrate below the mono-crystal thin-film; 5) bonding is performed between the top layer semiconductor material and a second substrate with an insulating layer; 6) and annealing processing is performed so that the first substrate and the buffer layer are separated from the mono-crystal thin-film, and the buffer layer is removed. Dual effect of ion co-injection and doped mono-crystal thin-film stripping is combined so that stripping dose is effectively reduced. The foreign ions are injected so that the mono-crystal thin-film is enabled to generate stress and adsorption capacity of the mono-crystal thin-film is increased. Stripping is realized after H-ion injection and annealing. Stripping occurs at the position of the ultrathin mono-crystal thin-film so that a crack is quite small, and the high-quality semiconductor-on-insulator material can be obtained.

Description

technical field [0001] The invention relates to a method for preparing a semiconductor material, in particular to a method for preparing a semiconductor material on an insulator by ion implantation technology. Background technique [0002] In recent years, silicon-on-insulator (SOI) materials have been widely used in many fields such as low-voltage, low-power consumption, high-temperature, and radiation-resistant devices because of their unique insulating buried layer structure, which can reduce the parasitic capacitance and leakage current of the substrate. . The application technology of silicon-on-insulator in related fields has been very mature, and strained silicon-on-insulator (sSOI) has also received increasing attention from relevant technical personnel. Silicon-germanium-on-insulator (SGOI) combines the advantages of silicon-germanium materials and silicon-on-insulator, not only It can reduce the parasitic capacitance and leakage current of the substrate, and can a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/762H01L21/265
CPCH01L21/76251H01L21/76254
Inventor 张苗陈达狄增峰薛忠营王刚母志强叶林
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap