High-frequency triode and manufacturing method

Abstract

The invention relates to a high-frequency triode and a manufacturing method. The high-frequency triode acquired through the manufacturing method comprises a P-type substrate, a first N-type epitaxiallayer and a second N-type epitaxial layer, two isolation grooves, a collector-electrode phosphorus bridge, a thermal oxide layer and an isolation layer, an inverted trapezoidal opening penetrating thethermal oxide layer, a rectangular opening which penetrates the isolation layer and is connected with the inverted trapezoidal opening, P-type polysilicon and a TEOS layer, an emitting electrode groove penetrating the P-type polysilicon and the TEOS layer, a base region, P-type highly-doped regions on two sides of the base region, an N-type region formed on the surface of the base region, an isolation side wall, emitting electrode polysilicon, a first contact hole, a second contact hole, an emitting electrode, a base electrode and a collector electrode. The first N-type epitaxial layer can bean N-type highly-doped epitaxial layer. The second N-type epitaxial layer is an N-type low-doped epitaxial layer. An isolation oxide layer and the polysilicon are sequentially formed in the isolationgrooves. The material of the isolation layer includes TEOS or BPSG.

Description

【Technical field】 [0001] The invention relates to the technical field of semiconductor manufacturing technology, in particular to a high-frequency triode and a manufacturing method thereof. 【Background technique】 [0002] High-frequency triodes are distinguished from ordinary triodes by their small transistor feature size, low breakdown voltage, high characteristic frequency, and difficult manufacturing process. It is generally used in high-frequency broadband low-noise amplifiers such as VHF, UHF, CATV, wireless remote control, and radio frequency modules. These applications are mostly used in low-voltage, small-signal, low-current, and low-noise conditions. [0003] In the existing structure of a high-frequency triode, two kinds of polysilicon are used. One kind of polysilicon is n+ polysilicon layer, which is used to reduce the surface recombination velocity of the base area to improve the injection efficiency of the emitter junction and increase the current gain; on the...

AI Technical Summary

Problems solved by technology

However, if the epitaxial layer is too thin, the doped impurities in the lower N-type buried layer may expand upward during the subsequent thermal process, making the thickness of the effective epitaxial layer out of control, thereby affecting device performance and reliability.

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