High-frequency triode and manufacturing method

A high-frequency triode and its manufacturing method are used in transistors, semiconductor/solid-state device manufacturing, electrical components, etc., which can solve problems such as loss of control of effective epitaxial layer thickness, affecting device performance and reliability, and achieve uniform impurity distribution and performance. And the effect of good reliability and reduced production cost

Inactive Publication Date: 2018-05-29
SHENZHEN JINGTE INTELLIGENT MFG TECH CO LTD
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Problems solved by technology

However, if the epitaxial layer is too thin, the doped impurities in the lower N-type buried layer may expand upward during the subsequent

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  • High-frequency triode and manufacturing method
  • High-frequency triode and manufacturing method
  • High-frequency triode and manufacturing method

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[0027] The technical solutions in the embodiments of the present invention will be described clearly and completely below. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of the present invention.

[0028] See Figure 1-Figure 7 , figure 1 It is a flow chart of the manufacturing method of the high frequency triode of the present invention, Figure 2-Figure 7 for figure 1 The structure diagram of each step of the manufacturing method of the high-frequency triode shown. The manufacturing method of the high-frequency triode includes the following steps.

[0029] Step S1, please refer to figure 2 , A P-type substrate is provided, a first N-type epitaxial layer and a second N-type epitaxial layer are sequentially formed on the...

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Abstract

The invention relates to a high-frequency triode and a manufacturing method. The high-frequency triode acquired through the manufacturing method comprises a P-type substrate, a first N-type epitaxiallayer and a second N-type epitaxial layer, two isolation grooves, a collector-electrode phosphorus bridge, a thermal oxide layer and an isolation layer, an inverted trapezoidal opening penetrating thethermal oxide layer, a rectangular opening which penetrates the isolation layer and is connected with the inverted trapezoidal opening, P-type polysilicon and a TEOS layer, an emitting electrode groove penetrating the P-type polysilicon and the TEOS layer, a base region, P-type highly-doped regions on two sides of the base region, an N-type region formed on the surface of the base region, an isolation side wall, emitting electrode polysilicon, a first contact hole, a second contact hole, an emitting electrode, a base electrode and a collector electrode. The first N-type epitaxial layer can bean N-type highly-doped epitaxial layer. The second N-type epitaxial layer is an N-type low-doped epitaxial layer. An isolation oxide layer and the polysilicon are sequentially formed in the isolationgrooves. The material of the isolation layer includes TEOS or BPSG.

Description

【Technical field】 [0001] The invention relates to the technical field of semiconductor manufacturing technology, in particular to a high-frequency triode and a manufacturing method thereof. 【Background technique】 [0002] High-frequency triodes are distinguished from ordinary triodes by their small transistor feature size, low breakdown voltage, high characteristic frequency, and difficult manufacturing process. It is generally used in high-frequency broadband low-noise amplifiers such as VHF, UHF, CATV, wireless remote control, and radio frequency modules. These applications are mostly used in low-voltage, small-signal, low-current, and low-noise conditions. [0003] In the existing structure of a high-frequency triode, two kinds of polysilicon are used. One kind of polysilicon is n+ polysilicon layer, which is used to reduce the surface recombination velocity of the base area to improve the injection efficiency of the emitter junction and increase the current gain; on the...

Claims

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Application Information

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IPC IPC(8): H01L21/331H01L29/73
CPCH01L29/66234H01L29/73
Inventor 不公告发明人
Owner SHENZHEN JINGTE INTELLIGENT MFG TECH CO LTD
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