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[0004] In view of the above defects or improvement needs of the prior art, the purpose of the present invention is to provide a three-dimensional stacked phase change memory and its preparation method, wherein the overall flow process design of its key preparation method, the shape setting of each detailed structure, etc. Improvement, compared with the prior art, it can effectively solve the problems of complex multi-layer stacking steps in the process preparation of three-dimensional stacked phase change memory devices, difficulty in process realization, and unit size reduction. The present invention adopts a vertical electrode structure to establish a three-dimensional phase change memory In the change memory array, the feature size of the phase change unit is determined by the thickness of the film (for example, the thickness of the phase change layer can be as low as 2nm, which breaks through the limitation of photolithography process), and the phase change unit in the three-dimensional stacked phase change memory formed is located on the horizontal electrode Spatial overlapping area with the vertical electrode, the preparation process can be effectively simplified
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preparation example Construction
[0053] Such as Figure 1(a1) to Figure 1(a17) As shown, the preparation method of the three-dimensional stacked phase change memory in the present invention may specifically include the following steps:
[0054] (1) preparing N first horizontal electrodes with equal spacing along a certain direction on the substrate;
[0055] Wherein, N is smaller than the maximum number of first horizontal electrodes that the substrate can accommodate along this direction; in order to increase the storage density of the memory as much as possible, N can take as large a value as possible within the value range.
[0056] (2) filling the same first strip-shaped phase change layer with a certain gap in the center in the gap between two adjacent electrodes of the first horizontal electrode;
[0057] Wherein, the width of each phase-change layer with gaps in the first strip-shaped phase-change layer is 0-4 um larger than the gap between the first horizontal electrodes.
[0058] (3) filling the gat...
Embodiment 1
[0075] In this embodiment, a two-layer stacked memory is taken as an example to propose a specific implementation of a three-dimensional stacked phase change memory and its preparation method, including the following steps:
[0076] Step 1: On a single crystal silicon substrate, obtain a number of first horizontal electrode patterns along a certain direction with a line width of 10 μm and a pitch of 15 μm through a photolithography process, and deposit a 100 nm TiW alloy electrode material on the substrate after photolithography, After the lift-off process, the first horizontal electrode corresponding to the photolithographic pattern is obtained, such as Figure 1(a1)~Figure 1(a2) and Figure 2(b1)~Figure 2(b2) shown.
[0077] Step 2: On the basis of step 1, the first strip-shaped phase change layer pattern with a gap in the center of the photolithography, the line width is 17 μm, the gap is 10 μm, and the spacing is 8 μm. This pattern covers the spacing of the first horizont...
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Abstract
The invention discloses a three-dimensional stacked phase change memory and a preparation method thereof. The preparation method comprises a step of preparing first horizontal electrodes with spacingfrom each other on a substrate, a step of preparing first strip-shaped phase change layers with gaps in the centers in areas corresponding to the spacing of the first horizontal electrodes, a step ofpreparing first gate tubes between the gaps of the first strip-shaped phase change layers, a step of preparing a first insulating layer, a step of preparing second horizontal electrodes at the same vertical positions on the first insulating layer, a step of preparing second strip-shaped phase change layers, a step of preparing second gate tubes, a step of preparing horizontal insulating holes in the spacing of the horizontal electrodes, and a step of preparing a vertical electrode between adjacent insulating holes and then forming a multi-layer stacked phase change memory with a vertical structure. According to the invention, the overall process design of the key preparation method, the shape setting of each detail structure and the like are improved, and the problems of complicated multi-layer stacking steps, difficult process realization and the miniaturization of a unit size of the three-dimensional stacked phase change memory in the process preparation are solved.
Description
technical field [0001] The invention belongs to the technical field of microelectronic devices and memories, and more specifically relates to a three-dimensional stacked phase-change memory and a preparation method thereof. Background technique [0002] As a new type of memory that is most likely to develop into one of the mainstream memories in the future, in order to meet the demand for high-capacity storage in the era of big data, phase change memory is gradually developing into three dimensions, forming a multi-layer stacked three-dimensional phase change memory. [0003] At present, the three-dimensional stacked phase change memory is simply stacked vertically upwards based on the horizontal electrode intersection array structure. Although the structure is simple, as the number of stacked layers increases, the process steps are cumbersome, and the surface unevenness is intensified, which brings Reliability issues; in addition, the feature size of the memory cell is limi...
Claims
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